6116LA120DB

IDT, Integrated Device Technology Inc 6116LA120DB

Part Number:
6116LA120DB
Manufacturer:
IDT, Integrated Device Technology Inc
Ventron No:
3238080-6116LA120DB
Description:
IC SRAM 16KBIT 120NS 24CDIP
ECAD Model:
Datasheet:
6116LA120DB

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Specifications
IDT, Integrated Device Technology Inc 6116LA120DB technical specifications, attributes, parameters and parts with similar specifications to IDT, Integrated Device Technology Inc 6116LA120DB.
  • Factory Lead Time
    15 Weeks
  • Mounting Type
    Through Hole
  • Package / Case
    24-CDIP (0.600, 15.24mm)
  • Operating Temperature
    -55°C~125°C TA
  • Packaging
    Tray
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Technology
    SRAM - Asynchronous
  • Voltage - Supply
    4.5V~5.5V
  • Base Part Number
    IDT6116
  • Memory Size
    16Kb 2K x 8
  • Memory Type
    Volatile
  • Memory Format
    SRAM
  • Memory Interface
    Parallel
  • Write Cycle Time - Word, Page
    120ns
  • RoHS Status
    Non-RoHS Compliant
Description
6116LA120DB Overview
The mounting type for this particular component is through hole, making it easy to install on a circuit board. The package/case size is 24-CDIP (0.600, 15.24mm), which provides a compact and efficient design. The packaging for this component is in a tray, ensuring safe transportation and storage. With a moisture sensitivity level (MSL) of 1 (unlimited), there is no need to worry about any damage caused by moisture. This SRAM component operates asynchronously and requires a voltage supply of 4.5V~5.5V. It has a memory size of 16Kb 2K x 8 and is classified as volatile memory, meaning it requires power to retain data. The memory format is SRAM and it has a fast write cycle time of 120ns, making it a reliable and efficient choice for memory storage.

6116LA120DB Features
Package / Case: 24-CDIP (0.600, 15.24mm)


6116LA120DB Applications
There are a lot of Renesas Electronics America Inc.
6116LA120DB Memory applications.


Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
6116LA120DB More Descriptions
SRAM Chip Async Single 5V 16K-Bit 2K x 8 120ns 24-Pin CDIP
5.0V 2K x 8 Asynchronous Static RAM
IC SRAM 16KBIT PARALLEL 24CDIP
SRAM 16K Asynch. 2Kx8 HS, L-Pwr, SRAM
Product Comparison
The three parts on the right have similar specifications to 6116LA120DB.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    Technology
    Voltage - Supply
    Base Part Number
    Memory Size
    Memory Type
    Memory Format
    Memory Interface
    Write Cycle Time - Word, Page
    RoHS Status
    View Compare
  • 6116LA120DB
    6116LA120DB
    15 Weeks
    Through Hole
    24-CDIP (0.600, 15.24mm)
    -55°C~125°C TA
    Tray
    Active
    1 (Unlimited)
    SRAM - Asynchronous
    4.5V~5.5V
    IDT6116
    16Kb 2K x 8
    Volatile
    SRAM
    Parallel
    120ns
    Non-RoHS Compliant
    -
  • 6116LA25DB
    15 Weeks
    Through Hole
    24-CDIP (0.600, 15.24mm)
    -55°C~125°C TA
    Tray
    Active
    1 (Unlimited)
    SRAM - Asynchronous
    4.5V~5.5V
    IDT6116
    16Kb 2K x 8
    Volatile
    SRAM
    Parallel
    25ns
    Non-RoHS Compliant
  • 6116LA20TDB
    15 Weeks
    Through Hole
    24-CDIP (0.300, 7.62mm)
    -55°C~125°C TA
    Tray
    Active
    1 (Unlimited)
    SRAM - Asynchronous
    4.5V~5.5V
    IDT6116
    16Kb 2K x 8
    Volatile
    SRAM
    Parallel
    20ns
    Non-RoHS Compliant
  • 6116LA150DB
    15 Weeks
    Through Hole
    24-CDIP (0.600, 15.24mm)
    -55°C~125°C TA
    Tray
    Active
    1 (Unlimited)
    SRAM - Asynchronous
    4.5V~5.5V
    IDT6116
    16Kb 2K x 8
    Volatile
    SRAM
    Parallel
    150ns
    Non-RoHS Compliant
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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