IDT, Integrated Device Technology Inc 6116LA150DB
- Part Number:
- 6116LA150DB
- Manufacturer:
- IDT, Integrated Device Technology Inc
- Ventron No:
- 3235670-6116LA150DB
- Description:
- IC SRAM 16KBIT 120NS 24CDIP
- ECAD Model:
-
- Datasheet:
- 6116LA150DB
IDT, Integrated Device Technology Inc 6116LA150DB technical specifications, attributes, parameters and parts with similar specifications to IDT, Integrated Device Technology Inc 6116LA150DB.
- Factory Lead Time15 Weeks
- Mounting TypeThrough Hole
- Package / Case24-CDIP (0.600, 15.24mm)
- Operating Temperature-55°C~125°C TA
- PackagingTray
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologySRAM - Asynchronous
- Voltage - Supply4.5V~5.5V
- Base Part NumberIDT6116
- Memory Size16Kb 2K x 8
- Memory TypeVolatile
- Memory FormatSRAM
- Memory InterfaceParallel
- Write Cycle Time - Word, Page150ns
- RoHS StatusNon-RoHS Compliant
6116LA150DB Overview
This product features a Through Hole mounting type and has an operating temperature range of -55°C to 125°C TA. It is packaged in a tray and has a Moisture Sensitivity Level (MSL) of 1 (Unlimited). The technology used is SRAM - Asynchronous and it has a memory size of 16Kb 2K x 8. This memory is volatile and has a parallel interface. The Write Cycle Time for both word and page is 150ns. This product is also Non-RoHS Compliant.
6116LA150DB Features
Package / Case: 24-CDIP (0.600, 15.24mm)
6116LA150DB Applications
There are a lot of Renesas Electronics America Inc.
6116LA150DB Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
This product features a Through Hole mounting type and has an operating temperature range of -55°C to 125°C TA. It is packaged in a tray and has a Moisture Sensitivity Level (MSL) of 1 (Unlimited). The technology used is SRAM - Asynchronous and it has a memory size of 16Kb 2K x 8. This memory is volatile and has a parallel interface. The Write Cycle Time for both word and page is 150ns. This product is also Non-RoHS Compliant.
6116LA150DB Features
Package / Case: 24-CDIP (0.600, 15.24mm)
6116LA150DB Applications
There are a lot of Renesas Electronics America Inc.
6116LA150DB Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
6116LA150DB More Descriptions
SRAM - Asynchronous Memory IC 16Kb (2K x 8) Parallel 150ns 24-CDIP
SRAM Chip Async Single 5V 16K-Bit 2K x 8 150ns 24-Pin CDIP
5.0V 2K x 8 Asynchronous Static RAM
IC SRAM 16KBIT PARALLEL 24CDIP
SRAM 16K Asynch. 2Kx8 HS, L-Pwr, SRAM
SRAM Chip Async Single 5V 16K-Bit 2K x 8 150ns 24-Pin CDIP
5.0V 2K x 8 Asynchronous Static RAM
IC SRAM 16KBIT PARALLEL 24CDIP
SRAM 16K Asynch. 2Kx8 HS, L-Pwr, SRAM
The three parts on the right have similar specifications to 6116LA150DB.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyBase Part NumberMemory SizeMemory TypeMemory FormatMemory InterfaceWrite Cycle Time - Word, PageRoHS StatusSupplier Device PackageAccess TimeView Compare
-
6116LA150DB15 WeeksThrough Hole24-CDIP (0.600, 15.24mm)-55°C~125°C TATrayActive1 (Unlimited)SRAM - Asynchronous4.5V~5.5VIDT611616Kb 2K x 8VolatileSRAMParallel150nsNon-RoHS Compliant--- -
15 WeeksSurface Mount24-SOIC (0.295, 7.50mm Width)-40°C~85°C TATape & Reel (TR)Active1 (Unlimited)SRAM - Asynchronous4.5V~5.5VIDT611616Kb 2K x 8VolatileSRAMParallel25nsROHS3 Compliant24-SOIC25ns
-
15 WeeksThrough Hole24-CDIP (0.600, 15.24mm)-55°C~125°C TATrayActive1 (Unlimited)SRAM - Asynchronous4.5V~5.5VIDT611616Kb 2K x 8VolatileSRAMParallel120nsNon-RoHS Compliant--
-
15 WeeksThrough Hole24-CDIP (0.300, 7.62mm)-55°C~125°C TATrayActive1 (Unlimited)SRAM - Asynchronous4.5V~5.5VIDT611616Kb 2K x 8VolatileSRAMParallel20nsNon-RoHS Compliant--
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