ON Semiconductor 2SK3666-2-TB-E

Name: 2SK3666-2-TB-E
Brand: ON Semiconductor
SKU: 2495781-2SK3666-2-TB-E
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2SK3666-2-TB-E

Manufacturer:: ON Semiconductor

Ventron No:: 2495781-2SK3666-2-TB-E

Description:: JFET NCH 30V 200MW 3CP

ECAD Model:

Datasheet:: 2SK3666-2-TB-E

Specifications

ON Semiconductor 2SK3666-2-TB-E technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2SK3666-2-TB-E.

Lifecycle Status
ACTIVE (Last Updated: 6 days ago)
Factory Lead Time
6 Weeks
Package / Case
TO-236-3
Surface Mount
YES
Number of Pins
3
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e6
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Bismuth (Sn/Bi)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Pin Count
3
Number of Elements
1
Element Configuration
Single
Operating Mode
DEPLETION MODE
Power Dissipation
200mW
Transistor Application
AMPLIFIER
Drain to Source Voltage (Vdss)
30V
Polarity/Channel Type
N-CHANNEL
Continuous Drain Current (ID)
10mA
Gate to Source Voltage (Vgs)
-30V
Drain Current-Max (Abs) (ID)
0.01A
Drain to Source Breakdown Voltage
30V
Input Capacitance
4pF
FET Technology
JUNCTION
Drain to Source Resistance
200Ohm
Height
1.1mm
Length
2.9mm
Width
1.5mm
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

2SK3666-2-TB-E Description N – Channel JFET ?It consists of an n – type silicon bar forming the conduction channel for the charge carriers. The pn – junction forming diodes are connected internally and a common terminal called GATE is taken out from the p - Region. The other two terminals viz. Source and Drain are taken out from the bar.

2SK3666-2-TB-E Applications
·Low-frequency general-purpose amplifier impedance conversion infrared sensor applications 2SK3666-2-TB-E Features
·Small IGSS ·Small Ciss

2SK3666-2-TB-E More Descriptions

N-Channel JFET, 30V, 0.6 to 6.0mA, 6.5mS, CP
Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction FET
Transistor, JFET, N-CH, -0.95V, SOT-23; Breakdown Voltage Vbr:-30V; Zero Gate Drain Current Idss Min:600µA;
2SK3666-2-TB-E N-channel JFET Transistor, 30 V, Idss 0.6 to 1.5mA, 3-Pin SOT-23 | ON Semiconductor 2SK3666-2-TB-E
Junction FET 30V 10mA IDSS 0.6 to 10 mA N-Channel Single CP
Trans JFET N-CH 30V 10mA 3-Pin CP T/R - Tape and Reel
TRANSISTOR, JFET, N-CH, -0.95V, SOT-23;
Transistor, Jfet, N-Ch, -0.95V, Sot-23; Gate Source Breakdown Voltage Max:-30V; Zero Gate Voltage Drain Current Max:1.5Ma; Gate Source Cutoff Voltage Max:-950Mv; No. Of Pins:3 Pin; Operating Temperature Max:150°C; Product Range:- Rohs Compliant: Yes |Onsemi 2SK3666-2-TB-E.

Certification

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2SK3666-2-TB-E Specification

Part Number	Manufacturers	Description	Stock	Price
2SK3666-2-TB-E DISTI #V72:2272_07322748	ON Semiconductor	Trans JFET N-CH 30V 10mA 3-Pin CP T/R RoHS: Compliant	3507	1 $0.4492 10 $0.3155 25 $0.3153 50 $0.25 100 $0.1292 250 $0.123 500 $0.1095 1000 $0.0796 3000 $0.074 6000 $0.0683 15000 $0.0665 30000 $0.0627 75000 $0.0575
2SK3666-2-TB-E DISTI #2SK3666-2-TB-EOSCT-ND	ON Semiconductor	JFET NCH 30V 200MW 3CP RoHS: Compliant	4135	1 $0.43 10 $0.302 100 $0.198 500 $0.11702 1000 $0.09002
2SK3666-2-TB-E DISTI #2SK3666-2-TB-EOSDKR-ND	ON Semiconductor	JFET NCH 30V 200MW 3CP RoHS: Compliant	0
2SK3666-2-TB-E DISTI #2SK3666-2-TB-EOSTR-ND	ON Semiconductor	JFET NCH 30V 200MW 3CP RoHS: Compliant	0	6000 $0.07866
2SK3666-2-TB-E DISTI #25775826	ON Semiconductor	Trans JFET N-CH 30V 10mA 3-Pin CP T/R RoHS: Compliant	3507	116 $0.4492
2SK3666-2-TB-E DISTI #2SK3666-2-TB-E	ON Semiconductor	Trans JFET N-CH 30V 10mA 3-Pin CP T/R - Bulk (Alt: RoHS: Not Compliant	0	4167 $0.0779 8334 $0.0769 12501 $0.0759 20835 $0.0749 41670 $0.0739
2SK3666-2-TB-E DISTI #2SK3666-2-TB-E	ON Semiconductor	Trans JFET N-CH 30V 10mA 3-Pin CP T/R - Tape and R RoHS: Compliant	0	9000 $0.0559 18000 $0.0559 27000 $0.0549 45000 $0.0539 90000 $0.0529
2SK3666-2-TB-E DISTI #2SK3666-2-TB-E	ON Semiconductor	Trans JFET N-CH 30V 10mA 3-Pin CP T/R (Alt: 2SK366 RoHS: Compliant	0	9000 $0.076 18000 $0.07308 27000 $0.07037 45000 $0.06786 90000 $0.06552 225000 $0.06333 450000 $0.0623
2SK3666-2-TB-E DISTI #52T9101	ON Semiconductor	NCH J-FET / REEL	0	1 $0.111 3000 $0.099 6000 $0.081 12000 $0.07 18000 $0.065 30000 $0.057
2SK3666-2-TB-E DISTI #99AC6873	ON Semiconductor	TRANSISTOR, JFET, N-CH, -0.95V, SOT-23, Breakdown	2479	1 $0.495 10 $0.319 25 $0.259 50 $0.198 100 $0.137 250 $0.127 500 $0.116 1000 $0.105
2SK3666-2-TB-E DISTI #863-2SK3666-2-TB-E	ON Semiconductor	JFET SWITCHING DEVICE RoHS: Compliant	7908	1 $0.49 10 $0.316 100 $0.136 1000 $0.104 3000 $0.079 9000 $0.07 24000 $0.066 45000 $0.059 99000 $0.056
2SK3666-2-TB-E DISTI #	ON Semiconductor	Small Signal Field-Effect Transistor RoHS: Compliant	874000	1 $0.08 25 $0.08 100 $0.07 500 $0.07 1000 $0.07
2SK3666-2-TB-E DISTI #	SANYO Semiconductor Co Ltd	Small Signal Field-Effect Transistor RoHS: Compliant	2763	1 $0.08 25 $0.08 100 $0.07 500 $0.07 1000 $0.07
2SK3666-2-TB-E DISTI #8009364P	ON Semiconductor	2SK3666-2-TB-E NCH J-FET, RL	7500	200 $0.094 500 $0.086 1000 $0.077 2000 $0.074
2SK3666-2-TB-E DISTI #2774812	ON Semiconductor	TRANSISTOR, JFET, N-CH, -0.95V, SOT-23 RoHS: Compliant	2479	5 $0.461 25 $0.369 100 $0.198 250 $0.15 500 $0.121 1000 $0.103 5000 $0.098
2SK3666-2-TB-E DISTI #2774812	ON Semiconductor	TRANSISTOR, JFET, N-CH, -0.95V, SOT-23	3624	5 $0.268 25 $0.257 100 $0.109 250 $0.104 500 $0.0913

2SK3666~~(4)~~
2SK366~~(14)~~
2SK36~~(95)~~
2SK3~~(113)~~
2SK~~(111)~~

ON Semiconductor 2SK3666-2-TB-E

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