ON Semiconductor 2SD1628G-TD-E
- Part Number:
- 2SD1628G-TD-E
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3585277-2SD1628G-TD-E
- Description:
- TRANS NPN 20V 5A SOT89-3
- ECAD Model:
-
- Datasheet:
- 2SD1628G-TD-E
ON Semiconductor 2SD1628G-TD-E technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2SD1628G-TD-E.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time8 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Number of Pins3
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2012
- JESD-609 Codee6
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Terminal FinishTin/Bismuth (Sn/Bi)
- Max Power Dissipation1.5W
- Frequency120MHz
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1.5W
- Power - Max500mW
- Gain Bandwidth Product120MHz
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)20V
- Max Collector Current5A
- DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 500mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 60mA, 3A
- Collector Emitter Breakdown Voltage20V
- Collector Emitter Saturation Voltage500mV
- Max Breakdown Voltage20V
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)6V
- Height1.5mm
- Length4.5mm
- Width2.5mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2SD1628G-TD-E Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 500mA 2V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 60mA, 3A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.There is a breakdown input voltage of 20V volts that it can take.Collector current can be as low as 5A volts at its maximum.
2SD1628G-TD-E Features
the DC current gain for this device is 120 @ 500mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 60mA, 3A
the emitter base voltage is kept at 6V
2SD1628G-TD-E Applications
There are a lot of ON Semiconductor
2SD1628G-TD-E applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 500mA 2V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 60mA, 3A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.There is a breakdown input voltage of 20V volts that it can take.Collector current can be as low as 5A volts at its maximum.
2SD1628G-TD-E Features
the DC current gain for this device is 120 @ 500mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 60mA, 3A
the emitter base voltage is kept at 6V
2SD1628G-TD-E Applications
There are a lot of ON Semiconductor
2SD1628G-TD-E applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2SD1628G-TD-E More Descriptions
Bipolar Transistor, 20V, 5A, Low VCE(sat), NPN Single PCP hFE 280-560
2SD1628 Series 20 V 5 A Surface Mount NPN Bipolar Transistor SOT-89
ON Semi 2SD1628G-TD-E NPN Bipolar Transistor; 5 A; 20 V; 3-Pin PCP
Trans GP BJT NPN 20V 5A 4-Pin(3 Tab) PCP T/R - Tape and Reel
20V 500mW 5A 120MHz 500mV@3A60mA NPN 150¡Í@(Tj) PCP Bipolar Transistors - BJT ROHS
TRANSISTOR, NPN, 20V, 5A, SOT-89; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 20V; Transition Frequency ft: 120MHz; Power Dissipation Pd: 500mW; DC Collector Current: 5A; DC Current Gain hFE: 280hFE; Transist
2SD1628 Series 20 V 5 A Surface Mount NPN Bipolar Transistor SOT-89
ON Semi 2SD1628G-TD-E NPN Bipolar Transistor; 5 A; 20 V; 3-Pin PCP
Trans GP BJT NPN 20V 5A 4-Pin(3 Tab) PCP T/R - Tape and Reel
20V 500mW 5A 120MHz 500mV@3A60mA NPN 150¡Í@(Tj) PCP Bipolar Transistors - BJT ROHS
TRANSISTOR, NPN, 20V, 5A, SOT-89; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 20V; Transition Frequency ft: 120MHz; Power Dissipation Pd: 500mW; DC Collector Current: 5A; DC Current Gain hFE: 280hFE; Transist
The three parts on the right have similar specifications to 2SD1628G-TD-E.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)ECCN CodeTerminal FinishMax Power DissipationFrequencyPin CountNumber of ElementsElement ConfigurationPower DissipationPower - MaxGain Bandwidth ProductTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)HeightLengthWidthRadiation HardeningRoHS StatusLead FreeSupplier Device PackageVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionMountTransistor Element MaterialNumber of TerminationsHTS CodeSubcategoryVoltage - Rated DCPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberJESD-30 CodeQualification StatusTransistor ApplicationPolarity/Channel TypeTransition FrequencyhFE MinView Compare
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2SD1628G-TD-EACTIVE (Last Updated: 1 day ago)8 WeeksSurface MountTO-243AA3150°C TJTape & Reel (TR)2012e6yesActive1 (Unlimited)EAR99Tin/Bismuth (Sn/Bi)1.5W120MHz31Single1.5W500mW120MHzNPN20V5A120 @ 500mA 2V100nA ICBO500mV @ 60mA, 3A20V500mV20V60V6V1.5mm4.5mm2.5mmNoROHS3 CompliantLead Free--------------------- -
--Through HoleTO-251-3 Short Leads, IPak, TO-251AA-150°C TJBulk---Obsolete1 (Unlimited)--------1W-NPN--200 @ 500mA 5V1μA ICBO400mV @ 200mA, 2A---------ROHS3 Compliant-TP100V4A180MHz----------------
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--Through Hole3-SIP-150°C TJTape & Box (TB)2006e1-Obsolete1 (Unlimited)EAR99TIN SILVER COPPER1W-31Single--80MHzNPN2V2A82 @ 100mA 5V1μA ICBO2V @ 100mA, 1A120V--120V5V----ROHS3 CompliantLead Free--2A-Through HoleSILICON38541.29.00.75Other Transistors120V2601.5A102SD1857R-PSIP-T3Not QualifiedSWITCHINGNPN80MHz82
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ACTIVE (Last Updated: 3 days ago)9 WeeksThrough HoleTO-220-3-150°C TJTube2005--Active1 (Unlimited)--1.75W-----1.75W-NPN300mV5A140 @ 1A 2V100μA ICBO300mV @ 300mA, 3A50V--60V6V----ROHS3 CompliantLead Free---30MHzThrough Hole---------------
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