Rohm Semiconductor 2SC4083T106P
- Part Number:
- 2SC4083T106P
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 2465290-2SC4083T106P
- Description:
- TRANS NPN 11V 0.05A SOT-323
- Datasheet:
- 2SC4083T106P
Rohm Semiconductor 2SC4083T106P technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor 2SC4083T106P.
- Factory Lead Time13 Weeks
- Contact PlatingCopper, Silver, Tin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-70, SOT-323
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2004
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- HTS Code8541.21.00.75
- SubcategoryOther Transistors
- Voltage - Rated DC11V
- Max Power Dissipation200mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating50mA
- Time@Peak Reflow Temperature-Max (s)10
- Base Part Number2SC4083
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product3.2 GHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)11V
- Max Collector Current50mA
- DC Current Gain (hFE) (Min) @ Ic, Vce82 @ 5mA 10V
- Current - Collector Cutoff (Max)500nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 5mA, 10mA
- Collector Emitter Breakdown Voltage11V
- Transition Frequency3200MHz
- Collector Emitter Saturation Voltage500mV
- Max Breakdown Voltage11V
- Collector Base Voltage (VCBO)20V
- Emitter Base Voltage (VEBO)3V
- hFE Min56
- Continuous Collector Current50mA
- VCEsat-Max0.5 V
- Highest Frequency BandS B
- Collector-Base Capacitance-Max1.5pF
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2SC4083T106P Overview
In this device, the DC current gain is 82 @ 5mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 5mA, 10mA.A 50mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 3V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 50mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3200MHz.Input voltage breakdown is available at 11V volts.Single BJT transistor is possible for the collector current to fall as low as 50mA volts at Single BJT transistors maximum.
2SC4083T106P Features
the DC current gain for this device is 82 @ 5mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 5mA, 10mA
the emitter base voltage is kept at 3V
the current rating of this device is 50mA
a transition frequency of 3200MHz
2SC4083T106P Applications
There are a lot of ROHM Semiconductor
2SC4083T106P applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 82 @ 5mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 5mA, 10mA.A 50mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 3V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 50mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3200MHz.Input voltage breakdown is available at 11V volts.Single BJT transistor is possible for the collector current to fall as low as 50mA volts at Single BJT transistors maximum.
2SC4083T106P Features
the DC current gain for this device is 82 @ 5mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 5mA, 10mA
the emitter base voltage is kept at 3V
the current rating of this device is 50mA
a transition frequency of 3200MHz
2SC4083T106P Applications
There are a lot of ROHM Semiconductor
2SC4083T106P applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2SC4083T106P More Descriptions
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 11V 0.05A 3-Pin UMT T/R
French Electronic Distributor since 1988
Trans GP BJT NPN 11V 0.05A 3-Pin UMT T/R
French Electronic Distributor since 1988
The three parts on the right have similar specifications to 2SC4083T106P.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentVCEsat-MaxHighest Frequency BandCollector-Base Capacitance-MaxRadiation HardeningRoHS StatusLead FreeLifecycle StatusSurface MountCurrent - Collector (Ic) (Max)Power - MaxConfigurationView Compare
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2SC4083T106P13 WeeksCopper, Silver, TinSurface MountSurface MountSC-70, SOT-3233SILICON150°C TJTape & Reel (TR)2004e1yesActive1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)8541.21.00.75Other Transistors11V200mWDUALGULL WING26050mA102SC408331SingleAMPLIFIER3.2 GHzNPNNPN11V50mA82 @ 5mA 10V500nA ICBO500mV @ 5mA, 10mA11V3200MHz500mV11V20V3V5650mA0.5 VS B1.5pFNoROHS3 CompliantLead Free------
-
4 Weeks--Through HoleTO-251-3 Short Leads, IPak, TO-251AA3-150°C TJBulk2012e6yesActive1 (Unlimited)-EAR99Tin/Bismuth (Sn/Bi)-Other Transistors-1W-----2SC40273-Single-120MHzNPNNPN160V1.5A100 @ 100mA 5V1μA ICBO450mV @ 50mA, 500mA160V-130mV-180V6V140-----ROHS3 CompliantLead FreeACTIVE (Last Updated: 1 week ago)NO1.5A--
-
--Surface MountSurface MountSC-70, SOT-323--125°C TJTape & Reel (TR)2009--Discontinued1 (Unlimited)------100mW-----2SC4116----80MHz-NPN250mV150mA70 @ 2mA 6V100nA ICBO250mV @ 10mA, 100mA50V--50V-5V70-----RoHS Compliant----100mW-
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26 Weeks-Surface MountSurface MountSC-89, SOT-4903SILICON150°C TJTape & Reel (TR)2009--Not For New Designs1 (Unlimited)3EAR99--Other Transistors-150mWDUALFLATNOT SPECIFIED-NOT SPECIFIED2SC4617-1-AMPLIFIER180MHzNPNNPN400mV150mA120 @ 1mA 6V100nA ICBO400mV @ 5mA, 50mA50V180MHz-50V60V7V120-----ROHS3 Compliant----150mWSINGLE
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