Rohm Semiconductor 2SC4672T100Q
- Part Number:
- 2SC4672T100Q
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 2845578-2SC4672T100Q
- Description:
- TRANS NPN 50V 2A SOT-89
- ECAD Model:
-
- Datasheet:
- 2SC4672
Rohm Semiconductor 2SC4672T100Q technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor 2SC4672T100Q.
- Contact PlatingCopper, Tin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Number of Pins4
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published1998
- JESD-609 Codee2
- Pbfree Codeyes
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTIN COPPER
- SubcategoryOther Transistors
- Voltage - Rated DC50V
- Max Power Dissipation500mW
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Current Rating3A
- Time@Peak Reflow Temperature-Max (s)10
- Base Part Number2SC4672
- Pin Count3
- JESD-30 CodeR-PSSO-F3
- Number of Elements1
- Element ConfigurationSingle
- Case ConnectionCOLLECTOR
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product210MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current3A
- DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 500mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic350mV @ 50mA, 1A
- Collector Emitter Breakdown Voltage50V
- Current - Collector (Ic) (Max)2A
- Transition Frequency210MHz
- Max Breakdown Voltage50V
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)6V
- hFE Min82
- VCEsat-Max0.35 V
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2SC4672T100Q Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 500mA 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 350mV @ 50mA, 1A.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 3A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 210MHz.The breakdown input voltage is 50V volts.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
2SC4672T100Q Features
the DC current gain for this device is 120 @ 500mA 2V
the vce saturation(Max) is 350mV @ 50mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 3A
a transition frequency of 210MHz
2SC4672T100Q Applications
There are a lot of ROHM Semiconductor
2SC4672T100Q applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 500mA 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 350mV @ 50mA, 1A.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 3A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 210MHz.The breakdown input voltage is 50V volts.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
2SC4672T100Q Features
the DC current gain for this device is 120 @ 500mA 2V
the vce saturation(Max) is 350mV @ 50mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 3A
a transition frequency of 210MHz
2SC4672T100Q Applications
There are a lot of ROHM Semiconductor
2SC4672T100Q applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2SC4672T100Q More Descriptions
50V 500mW 120@500mA,2V 2A NPN SOT-89 Bipolar Transistors - BJT ROHS
Trans GP BJT NPN 50V 3A 4-Pin(3 Tab) MPT T/R / TRANS NPN 50V 2A SOT-89
Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
2SC4672 Series 50 V 3 A SMT NPN Low Frequency Transistor - MPT3
TRANSISTOR, NPN, 50V, 3A, SOT-89; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 50V; Transition Frequency ft: 210MHz; Power Dissipation Pd: 500mW; DC Collector Current: 3A; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-89; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
Trans GP BJT NPN 50V 3A 4-Pin(3 Tab) MPT T/R / TRANS NPN 50V 2A SOT-89
Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
2SC4672 Series 50 V 3 A SMT NPN Low Frequency Transistor - MPT3
TRANSISTOR, NPN, 50V, 3A, SOT-89; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 50V; Transition Frequency ft: 210MHz; Power Dissipation Pd: 500mW; DC Collector Current: 3A; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-89; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
The three parts on the right have similar specifications to 2SC4672T100Q.
-
ImagePart NumberManufacturerContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsElement ConfigurationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCurrent - Collector (Ic) (Max)Transition FrequencyMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinVCEsat-MaxREACH SVHCRadiation HardeningRoHS StatusLead FreePower - MaxFactory Lead TimeECCN CodeTerminal PositionConfigurationSupplier Device PackageVoltage - Collector Emitter Breakdown (Max)Frequency - TransitionView Compare
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2SC4672T100QCopper, TinSurface MountSurface MountTO-243AA4SILICON150°C TJTape & Reel (TR)1998e2yesNot For New Designs1 (Unlimited)3TIN COPPEROther Transistors50V500mWFLAT2603A102SC46723R-PSSO-F31SingleCOLLECTORAMPLIFIER210MHzNPNNPN50V3A120 @ 500mA 2V100nA ICBO350mV @ 50mA, 1A50V2A210MHz50V60V6V820.35 VNo SVHCNoROHS3 CompliantLead Free--------- -
-Surface MountSurface MountSC-70, SOT-323--125°C TJTape & Reel (TR)2009--Discontinued1 (Unlimited)----100mW----2SC4116------80MHz-NPN250mV150mA70 @ 2mA 6V100nA ICBO250mV @ 10mA, 100mA50V--50V-5V70---RoHS Compliant-100mW-------
-
-Surface MountSurface MountSC-89, SOT-4903SILICON150°C TJTape & Reel (TR)2009--Not For New Designs1 (Unlimited)3-Other Transistors-150mWFLATNOT SPECIFIED-NOT SPECIFIED2SC4617--1--AMPLIFIER180MHzNPNNPN400mV150mA120 @ 1mA 6V100nA ICBO400mV @ 5mA, 50mA50V-180MHz50V60V7V120---ROHS3 Compliant-150mW26 WeeksEAR99DUALSINGLE---
-
-Surface MountSurface MountSC-70, SOT-323--150°C TJTape & Reel (TR)2003--Obsolete1 (Unlimited)---50V150mW--50mA-2SC4562--------NPN300mV50mA250 @ 2mA 10V100μA300mV @ 1mA, 10mA50V50mA-50V------RoHS CompliantLead Free150mW----SMini3-G150V250MHz
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