Rohm Semiconductor 2SC4081T106R
- Part Number:
- 2SC4081T106R
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 2845150-2SC4081T106R
- Description:
- TRANS NPN 50V 0.15A SOT-323
- Datasheet:
- 2SC4081T106R
Rohm Semiconductor 2SC4081T106R technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor 2SC4081T106R.
- Factory Lead Time10 Weeks
- Contact PlatingCopper, Silver, Tin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-70, SOT-323
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2004
- Pbfree Codeyes
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- HTS Code8541.21.00.75
- SubcategoryOther Transistors
- Voltage - Rated DC50V
- Max Power Dissipation200mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating150mA
- Time@Peak Reflow Temperature-Max (s)10
- Base Part Number2SC4081
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product180MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current150mA
- DC Current Gain (hFE) (Min) @ Ic, Vce180 @ 1mA 6V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 50mA
- Collector Emitter Breakdown Voltage50V
- Transition Frequency180MHz
- Max Breakdown Voltage50V
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)7V
- hFE Min120
- Continuous Collector Current150mA
- VCEsat-Max0.4 V
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2SC4081T106R Overview
In this device, the DC current gain is 180 @ 1mA 6V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 5mA, 50mA.Maintaining the continuous collector voltage at 150mA is essential for high efficiency.Keeping the emitter base voltage at 7V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (150mA).180MHz is present in the transition frequency.An input voltage of 50V volts is the breakdown voltage.Maximum collector currents can be below 150mA volts.
2SC4081T106R Features
the DC current gain for this device is 180 @ 1mA 6V
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 7V
the current rating of this device is 150mA
a transition frequency of 180MHz
2SC4081T106R Applications
There are a lot of ROHM Semiconductor
2SC4081T106R applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 180 @ 1mA 6V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 5mA, 50mA.Maintaining the continuous collector voltage at 150mA is essential for high efficiency.Keeping the emitter base voltage at 7V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (150mA).180MHz is present in the transition frequency.An input voltage of 50V volts is the breakdown voltage.Maximum collector currents can be below 150mA volts.
2SC4081T106R Features
the DC current gain for this device is 180 @ 1mA 6V
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 7V
the current rating of this device is 150mA
a transition frequency of 180MHz
2SC4081T106R Applications
There are a lot of ROHM Semiconductor
2SC4081T106R applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2SC4081T106R More Descriptions
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
50V 200mW 180@1mA,6V 150mA NPN SOT-323(SC-70) Bipolar Transistors - BJT ROHS
Trans GP BJT NPN 50V 0.15A 200mW 3-Pin UMT T/R
2SC4081 Series 50 V 0.15 A SMT NPN General Purpose Transistor - SC-70
TRANSISTOR,NPN,50V,0.15A,SOT-323; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 50V; Transition Frequency ft: 180MHz; Power Dissipation Pd: 200mW; DC Collector Current: 150mA; DC Current Gain hFE: 180hFE; Transistor Case Style: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Gain Bandwidth ft Typ: 180MHz
50V 200mW 180@1mA,6V 150mA NPN SOT-323(SC-70) Bipolar Transistors - BJT ROHS
Trans GP BJT NPN 50V 0.15A 200mW 3-Pin UMT T/R
2SC4081 Series 50 V 0.15 A SMT NPN General Purpose Transistor - SC-70
TRANSISTOR,NPN,50V,0.15A,SOT-323; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 50V; Transition Frequency ft: 180MHz; Power Dissipation Pd: 200mW; DC Collector Current: 150mA; DC Current Gain hFE: 180hFE; Transistor Case Style: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Gain Bandwidth ft Typ: 180MHz
The three parts on the right have similar specifications to 2SC4081T106R.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeHTS CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentVCEsat-MaxREACH SVHCRadiation HardeningRoHS StatusLead FreeLifecycle StatusJESD-609 CodeTerminal FinishReach Compliance CodeMax FrequencyCollector Emitter Saturation VoltageFrequency - TransitionHeightLengthWidthPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)FrequencyPower DissipationView Compare
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2SC4081T106R10 WeeksCopper, Silver, TinSurface MountSurface MountSC-70, SOT-3233SILICON150°C TJTape & Reel (TR)2004yesNot For New Designs1 (Unlimited)3EAR998541.21.00.75Other Transistors50V200mWDUALGULL WING260150mA102SC408131SingleAMPLIFIER180MHzNPNNPN50V150mA180 @ 1mA 6V100nA ICBO400mV @ 5mA, 50mA50V180MHz50V60V7V120150mA0.4 VNo SVHCNoROHS3 CompliantLead Free----------------
-
2 Weeks--Surface MountTO-252-3, DPak (2 Leads Tab), SC-633-150°C TJTape & Reel (TR)2012yesActive1 (Unlimited)-EAR99---1W-----2SC41353-Single---NPN100V2A140 @ 100mA 5V100nA ICBO400mV @ 100mA, 1A100V--120V6V100----ROHS3 CompliantLead FreeACTIVE (Last Updated: 2 days ago)e6Tin/Bismuth (Sn/Bi)not_compliant390MHz400mV120MHz5.5mm6.5mm2.3mm-----
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14 Weeks--Surface MountSC-70, SOT-323--125°C TJCut Tape (CT)-yesDiscontinued1 (Unlimited)------------------NPN--70 @ 2mA 6V100nA ICBO250mV @ 10mA, 100mA----------RoHS Compliant----unknown--80MHz---100mW50V150mA--
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14 Weeks-Surface MountSurface MountSC-70, SOT-3233-125°C TJCut Tape (CT)2014-Discontinued1 (Unlimited)---Other Transistors-100mW-------1Single--NPNNPN20V300mA200 @ 4mA 2V100nA ICBO100mV @ 3mA, 30A---50V25V-----RoHS Compliant----unknown-100mV-900μm2mm1.25mm--300mA30MHz100mW
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