Rohm Semiconductor 2SA1952TLQ

2SA1952TLQ Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 1A 2V DC current gain.As it features a collector emitter saturation voltage of -300mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -5A.Keeping the emitter base voltage at -5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 80MHz in the part.Single BJT transistor can be broken down at a voltage of 60V volts.When collector current reaches its maximum, it can reach 5A volts.

2SA1952TLQ Features
the DC current gain for this device is 120 @ 1A 2V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 500mV @ 200mA, 4A
the emitter base voltage is kept at -5V
the current rating of this device is -5A
a transition frequency of 80MHz


2SA1952TLQ Applications
There are a lot of ROHM Semiconductor
2SA1952TLQ applications of single BJT transistors.


Inverter
Interface
Driver
Muting