Fairchild/ON Semiconductor 2SA1381CSTU

Name: 2SA1381CSTU
Brand: Fairchild/ON Semiconductor
SKU: 3585664-2SA1381CSTU
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2SA1381CSTU

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3585664-2SA1381CSTU

Description:: TRANS PNP 300V 0.1A TO-126

ECAD Model:

Datasheet:: 2SA1381CSTU

Specifications

Fairchild/ON Semiconductor 2SA1381CSTU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor 2SA1381CSTU.

Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Position
SINGLE
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
7W
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 10mA 10V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 2mA, 20mA
Voltage - Collector Emitter Breakdown (Max)
300V
Current - Collector (Ic) (Max)
100mA
Transition Frequency
150MHz
Frequency - Transition
150MHz
RoHS Status
ROHS3 Compliant

Description

2SA1381CSTU Overview
This device has a DC current gain of 40 @ 10mA 10V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 150MHz.Detection of Collector Emitter Breakdown at 300V maximal voltage is present.

2SA1381CSTU Features
the DC current gain for this device is 40 @ 10mA 10V
the vce saturation(Max) is 600mV @ 2mA, 20mA
a transition frequency of 150MHz

2SA1381CSTU Applications
There are a lot of Rochester Electronics, LLC
2SA1381CSTU applications of single BJT transistors.

Inverter
Interface
Driver
Muting

2SA1381CSTU More Descriptions

Tube Through Hole PNP Single Bipolar (BJT) Transistor 40 @ 10mA 10V 100nA ICBO 7W 150MHz
Small Signal Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-126
Bipolar Transistors - BJT PNP 300V 0.1A 7W
Trans GP BJT PNP 300V 0.1A 3-Pin TO-126 Tube

Product Comparison

The three parts on the right have similar specifications to 2SA1381CSTU.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Position

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power - Max

Transistor Application

Polarity/Channel Type

Transistor Type

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Transition Frequency

Frequency - Transition

RoHS Status

Contact Plating

Mount

Number of Pins

Supplier Device Package

Published

Max Operating Temperature

Min Operating Temperature

Max Power Dissipation

Frequency

Polarity

Element Configuration

Power Dissipation

Gain Bandwidth Product

Collector Emitter Voltage (VCEO)

Max Collector Current

Collector Emitter Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Lead Free

Lifecycle Status

Factory Lead Time

JESD-609 Code

Pbfree Code

ECCN Code

Terminal Finish

Subcategory

Base Part Number

Halogen Free

Additional Feature

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Case Connection

JEDEC-95 Code

View Compare
2SA1381CSTU

Fairchild/ON Semiconductor

Through Hole

TO-225AA, TO-126-3

NO

SILICON

-55°C~150°C TJ

Tube

Obsolete

1 (Unlimited)

3

SINGLE

3

R-PSFM-T3

COMMERCIAL

1

SINGLE

7W

AMPLIFIER

PNP

PNP

40 @ 10mA 10V

100nA ICBO

600mV @ 2mA, 20mA

300V

100mA

150MHz

150MHz

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
2SA1244-Y(Q)

Toshiba Semiconductor and Storage

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

150°C TJ

Tube

Obsolete

1 (Unlimited)

-

-

-

-

-

1

-

1W

-

-

PNP

120 @ 1A 1V

1μA ICBO

400mV @ 150mA, 3A

50V

5A

-

60MHz

RoHS Compliant

Silver, Tin

Surface Mount

3

PW-MOLD

2013

150°C

-55°C

1W

60MHz

PNP

Single

1W

60MHz

50V

5A

50V

60V

5V

120

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

2SA1381CSTU vs 2SA1244-Y(Q)
2SA1552T-TL-H

ON Semiconductor

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

-

150°C TJ

Tape & Reel (TR)

Active

1 (Unlimited)

-

-

3

-

-

-

Single

1W

-

PNP

PNP

200 @ 100mA 5V

1μA ICBO

500mV @ 50mA, 500mA

-

-

-

120MHz

ROHS3 Compliant

-

-

3

-

2012

-

-

1W

-

-

-

-

-

160V

1.5A

160V

180V

6V

100

Lead Free

ACTIVE (Last Updated: 18 hours ago)

2 Weeks

e6

yes

EAR99

Tin/Bismuth (Sn/Bi)

Other Transistors

2SA1552

Halogen Free

-

-

-

-

-

-

2SA1381CSTU vs 2SA1552T-TL-H
2SA1568

Sanken

Through Hole

TO-220-3 Full Pack

-

SILICON

150°C TJ

Bulk

Active

1 (Unlimited)

3

SINGLE

3

R-PSFM-T3

Not Qualified

1

SINGLE

35W

SWITCHING

PNP

PNP

50 @ 6A 1V

100μA ICBO

350mV @ 300mA, 6A

-

-

40MHz

40MHz

RoHS Compliant

-

Through Hole

-

-

2007

-

-

35W

-

-

-

-

-

350mV

12A

60V

-

-

-

Lead Free

-

12 Weeks

-

yes

EAR99

-

Other Transistors

-

-

BUILT-IN BIAS RESISTOR

NOT SPECIFIED

unknown

NOT SPECIFIED

ISOLATED

TO-220AB

2SA1381CSTU vs 2SA1568