2N720A

Microsemi Corporation 2N720A

Part Number:
2N720A
Manufacturer:
Microsemi Corporation
Ventron No:
2464759-2N720A
Description:
TRANS NPN 80V 0.5A TO-18
ECAD Model:
Datasheet:
2N720A

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Specifications
Microsemi Corporation 2N720A technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation 2N720A.
  • Contact Plating
    Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-206AA, TO-18-3 Metal Can
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    175°C TJ
  • Packaging
    Tube
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    80V
  • Max Power Dissipation
    500mW
  • Terminal Position
    BOTTOM
  • Terminal Form
    WIRE
  • Peak Reflow Temperature (Cel)
    NOT APPLICABLE
  • Reach Compliance Code
    unknown
  • Current Rating
    500mA
  • Time@Peak Reflow Temperature-Max (s)
    NOT APPLICABLE
  • Base Part Number
    2N72
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Voltage
    80V
  • Element Configuration
    Single
  • Current
    5A
  • Power Dissipation
    500mW
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    80V
  • Max Collector Current
    500mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    40 @ 150mA 10V
  • Current - Collector Cutoff (Max)
    10nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    5V @ 15mA, 150mA
  • Collector Emitter Breakdown Voltage
    80V
  • Transition Frequency
    50MHz
  • Collector Base Voltage (VCBO)
    120V
  • Emitter Base Voltage (VEBO)
    7V
  • hFE Min
    40
  • RoHS Status
    ROHS3 Compliant
Description
2N720A Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 150mA 10V.When VCE saturation is 5V @ 15mA, 150mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.In the part, the transition frequency is 50MHz.A maximum collector current of 500mA volts can be achieved.

2N720A Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 5V @ 15mA, 150mA
the emitter base voltage is kept at 7V
the current rating of this device is 500mA
a transition frequency of 50MHz


2N720A Applications
There are a lot of STMicroelectronics
2N720A applications of single BJT transistors.


Inverter
Interface
Driver
Muting
2N720A More Descriptions
Bipolar (BJT) Transistor NPN 80 V 500 mA 500 mW Through Hole TO-18 (TO-206AA)
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-18
Trans GP BJT NPN 80V 0.5A 500mW 3-Pin TO-18 Bag
Power Bjt To-18 Rohs Compliant: Yes |Microchip 2N720A
Bipolar Transistors - BJT BJTs
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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