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2N6609

Central Semiconductor Corp 2N6609

Part Number:
2N6609
Manufacturer:
Central Semiconductor Corp
Ventron No:
2465344-2N6609
Description:
TRANS PNP 140V 16A TO3
ECAD Model:
Datasheet:
2N6609

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Specifications
Central Semiconductor Corp 2N6609 technical specifications, attributes, parameters and parts with similar specifications to Central Semiconductor Corp 2N6609.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-204AA, TO-3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~200°C TJ
  • Packaging
    Tray
  • Published
    2009
  • JESD-609 Code
    e0
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn80Pb20)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -140V
  • Max Power Dissipation
    150W
  • Terminal Position
    BOTTOM
  • Terminal Form
    PIN/PEG
  • Peak Reflow Temperature (Cel)
    240
  • Reach Compliance Code
    not_compliant
  • Current Rating
    -16A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    2N6609
  • Pin Count
    2
  • JESD-30 Code
    O-MBFM-P2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    150W
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    140V
  • Max Collector Current
    16A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    15 @ 8A 4V
  • Current - Collector Cutoff (Max)
    10mA
  • Vce Saturation (Max) @ Ib, Ic
    4V @ 3.2A, 16A
  • Collector Emitter Breakdown Voltage
    140V
  • Transition Frequency
    4MHz
  • Collector Emitter Saturation Voltage
    1.4V
  • Collector Base Voltage (VCBO)
    160V
  • Emitter Base Voltage (VEBO)
    7V
  • hFE Min
    15
  • REACH SVHC
    No SVHC
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
2N6609 Overview
This device has a DC current gain of 15 @ 8A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.4V.A VCE saturation (Max) of 4V @ 3.2A, 16A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.This device has a current rating of -16A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 4MHz.A maximum collector current of 16A volts is possible.

2N6609 Features
the DC current gain for this device is 15 @ 8A 4V
a collector emitter saturation voltage of 1.4V
the vce saturation(Max) is 4V @ 3.2A, 16A
the emitter base voltage is kept at 7V
the current rating of this device is -16A
a transition frequency of 4MHz


2N6609 Applications
There are a lot of ON Semiconductor
2N6609 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
2N6609 More Descriptions
Transistor Pnp Silicon Bvceo=140V Ic=16A To-3 Case For High Power Audio And Linear Apllications
Power Bipolar Transistor,
TRANS PNP 140V 16A TO204
T-PNP SI-AF PONTE Electronics
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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