ON Semiconductor 2N6426
- Part Number:
- 2N6426
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2465881-2N6426
- Description:
- TRANS NPN DARL 40V 0.5A TO92
- Datasheet:
- 2N6426 2N6426, 6427
ON Semiconductor 2N6426 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N6426.
- Lifecycle StatusOBSOLETE (Last Updated: 2 days ago)
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Number of Pins3
- Supplier Device PackageTO-92-3
- Weight201mg
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- Published1997
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC40V
- Max Power Dissipation625mW
- Current Rating1.2A
- Base Part Number2N6426
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation625mW
- Power - Max625mW
- Transistor TypeNPN - Darlington
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce30000 @ 100mA 5V
- Current - Collector Cutoff (Max)1μA
- Vce Saturation (Max) @ Ib, Ic1.5V @ 500μA, 500mA
- Collector Emitter Breakdown Voltage40V
- Voltage - Collector Emitter Breakdown (Max)40V
- Current - Collector (Ic) (Max)500mA
- Collector Emitter Saturation Voltage1.2V
- Max Breakdown Voltage40V
- Collector Base Voltage (VCBO)40V
- Emitter Base Voltage (VEBO)12V
- hFE Min30000
- Continuous Collector Current500mA
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
- Lead FreeLead Free
2N6426 Description
2N6426 is an NPN Darlington Transistor designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05.
2N6426 Features
Type: NPN
Collector Current (Ic): 0.5A
Collector-Base Volt (Vcbo): 40V
Collector-Emitter Volt (Vceo): 40V
hfe: 30,000-300,000 @ 100mA
Power Dissipation (Ptot): 625mW
2N6426 Applications
Extremely high current gain at currents to 1.0 A
2N6426 is an NPN Darlington Transistor designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05.
2N6426 Features
Type: NPN
Collector Current (Ic): 0.5A
Collector-Base Volt (Vcbo): 40V
Collector-Emitter Volt (Vceo): 40V
hfe: 30,000-300,000 @ 100mA
Power Dissipation (Ptot): 625mW
2N6426 Applications
Extremely high current gain at currents to 1.0 A
2N6426 More Descriptions
Transistor NPN Silicon Darlington 40V IC=1.2A TO-92 Case High Current GainNTE Electronics
Trans Darlington NPN 0.5A 3-Pin TO-92
DARLINGTON TRANSISTOR, NPN, 100V, 500mA, TO-92-3; Transistor Polarity:NPN; No. of Pins:3Pins; Transistor Mounting:Through Hole; Operating Temperature Max:150°C; Product Range:-; Qualification:-; Collector Emitter Voltage Max:100V RoHS Compliant: Yes
Trans Darlington NPN 0.5A 3-Pin TO-92
DARLINGTON TRANSISTOR, NPN, 100V, 500mA, TO-92-3; Transistor Polarity:NPN; No. of Pins:3Pins; Transistor Mounting:Through Hole; Operating Temperature Max:150°C; Product Range:-; Qualification:-; Collector Emitter Voltage Max:100V RoHS Compliant: Yes
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