2N6426

ON Semiconductor 2N6426

Part Number:
2N6426
Manufacturer:
ON Semiconductor
Ventron No:
2465881-2N6426
Description:
TRANS NPN DARL 40V 0.5A TO92
ECAD Model:
Datasheet:
2N6426 2N6426, 6427

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Specifications
ON Semiconductor 2N6426 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N6426.
  • Lifecycle Status
    OBSOLETE (Last Updated: 2 days ago)
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA)
  • Number of Pins
    3
  • Supplier Device Package
    TO-92-3
  • Weight
    201mg
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Bulk
  • Published
    1997
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    40V
  • Max Power Dissipation
    625mW
  • Current Rating
    1.2A
  • Base Part Number
    2N6426
  • Number of Elements
    1
  • Polarity
    NPN
  • Element Configuration
    Single
  • Power Dissipation
    625mW
  • Power - Max
    625mW
  • Transistor Type
    NPN - Darlington
  • Collector Emitter Voltage (VCEO)
    40V
  • Max Collector Current
    500mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    30000 @ 100mA 5V
  • Current - Collector Cutoff (Max)
    1μA
  • Vce Saturation (Max) @ Ib, Ic
    1.5V @ 500μA, 500mA
  • Collector Emitter Breakdown Voltage
    40V
  • Voltage - Collector Emitter Breakdown (Max)
    40V
  • Current - Collector (Ic) (Max)
    500mA
  • Collector Emitter Saturation Voltage
    1.2V
  • Max Breakdown Voltage
    40V
  • Collector Base Voltage (VCBO)
    40V
  • Emitter Base Voltage (VEBO)
    12V
  • hFE Min
    30000
  • Continuous Collector Current
    500mA
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Lead Free
Description
2N6426 Description
2N6426 is an NPN Darlington Transistor designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. 

2N6426 Features
Type: NPN
Collector Current (Ic): 0.5A
Collector-Base Volt (Vcbo): 40V
Collector-Emitter Volt (Vceo): 40V
hfe: 30,000-300,000 @ 100mA
Power Dissipation (Ptot): 625mW

2N6426 Applications
Extremely high current gain at currents to 1.0 A

2N6426 More Descriptions
Transistor NPN Silicon Darlington 40V IC=1.2A TO-92 Case High Current GainNTE Electronics
Trans Darlington NPN 0.5A 3-Pin TO-92
DARLINGTON TRANSISTOR, NPN, 100V, 500mA, TO-92-3; Transistor Polarity:NPN; No. of Pins:3Pins; Transistor Mounting:Through Hole; Operating Temperature Max:150°C; Product Range:-; Qualification:-; Collector Emitter Voltage Max:100V RoHS Compliant: Yes
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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