ON Semiconductor 2N5401G

Name: 2N5401G
Brand: ON Semiconductor
SKU: 2467961-2N5401G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2N5401G

Manufacturer:: ON Semiconductor

Ventron No:: 2467961-2N5401G

Description:: TRANS PNP 150V 0.6A TO-92

ECAD Model:

Datasheet:: 2N5401G

Specifications

ON Semiconductor 2N5401G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N5401G.

Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 day ago)
Contact Plating
Copper, Silver, Tin
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Surface Mount
NO
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2005
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory
Other Transistors
Voltage - Rated DC
-150V
Max Power Dissipation
625mW
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
Current Rating
-600mA
Frequency
300MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
2N5401
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
625mW
Transistor Application
AMPLIFIER
Gain Bandwidth Product
300MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
150V
Max Collector Current
600mA
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 10mA 5V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
150V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
500mV
Collector Base Voltage (VCBO)
160V
Emitter Base Voltage (VEBO)
5V
hFE Min
50
Height
5.334mm
Length
5.1816mm
Width
4.191mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

2N5401G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 60 @ 10mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 5mA, 50mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -600mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.

2N5401G Features
the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 100MHz

2N5401G Applications
There are a lot of ON Semiconductor
2N5401G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

2N5401G More Descriptions

High Current PNP Bipolar Transistor, TO-92 150 V, 0.1 A
Small Signal Bipolar Transistor, 0.6A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Transistor, Bipolar,Si,PNP,Amplifier,VCEO 150VDC,IC 600mA,PD 1.5W,TO-92,hFE 50 | ON Semiconductor 2N5401G
ON SEMICONDUCTOR - 2N5401G - TRANSISTOR, PNP, 150V, 0.6A, TO-92
Bipolar Transistor; Transistor Polarity:PNP; Collector Emitter Voltage, V(br)ceo:150V; Collector Emitter Saturation Voltage, Vce(sat):60V; Power Dissipation, Pd:0.625W; DC Current Gain Min (hfe):60; Package/Case:TO-92 ;RoHS Compliant: Yes
TRANSISTOR, PNP, 150V, 0.6A, TO-92; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 150V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 625mW; DC Collector Current: 600mA; DC Current Gain hFE: 100hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 200mV; Gain Bandwidth ft Typ: 300MHz; Hfe Min: 50; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C

Product Comparison

The three parts on the right have similar specifications to 2N5401G.

Image

Part Number

Manufacturer

Lifecycle Status

Contact Plating

Mounting Type

Package / Case

Surface Mount

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Position

Peak Reflow Temperature (Cel)

Current Rating

Frequency

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Element Configuration

Power Dissipation

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Frequency - Transition

Mount

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Polarity

View Compare
2N5401G

ON Semiconductor

LAST SHIPMENTS (Last Updated: 1 day ago)

Copper, Silver, Tin

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

NO

3

4.535924g

SILICON

-55°C~150°C TJ

Bulk

2005

e1

yes

Obsolete

1 (Unlimited)

3

EAR99

Tin/Silver/Copper (Sn/Ag/Cu)

Other Transistors

-150V

625mW

BOTTOM

260

-600mA

300MHz

40

2N5401

3

1

Single

625mW

AMPLIFIER

300MHz

PNP

PNP

150V

600mA

60 @ 10mA 5V

50nA ICBO

500mV @ 5mA, 50mA

150V

100MHz

500mV

160V

5V

50

5.334mm

5.1816mm

4.191mm

No SVHC

No

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-
2N5400_D75Z

Fairchild/ON Semiconductor

-

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

-

-

-

-

-55°C~150°C TJ

Tape & Box (TB)

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

2N5400

-

-

-

-

-

-

-

PNP

-

-

40 @ 10mA 5V

100nA ICBO

500mV @ 5mA, 50mA

-

-

-

-

-

-

-

-

-

-

-

-

-

625mW

120V

600mA

400MHz

-

-

-

-

-

2N5401G vs 2N5400_D75Z
2N5401CTA

Fairchild/ON Semiconductor

-

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

-

3

178.2mg

-

-55°C~150°C TJ

Tape & Box (TB)

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-160V

625mW

-

-

-600mA

400MHz

-

2N5401

-

1

Single

625mW

-

300MHz

-

PNP

500mV

600mA

60 @ 10mA 5V

50nA ICBO

500mV @ 5mA, 50mA

150V

-

-

-160V

-5V

60

-

-

-

-

-

RoHS Compliant

Lead Free

625mW

150V

600mA

400MHz

Through Hole

TO-92-3

150°C

-55°C

PNP

2N5401G vs 2N5401CTA
2N5401_D28Z

Fairchild/ON Semiconductor

-

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

-

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

PNP

-

-

60 @ 10mA 5V

50nA ICBO

500mV @ 5mA, 50mA

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

625mW

150V

600mA

400MHz

-

TO-92-3

-

-

-

2N5401G vs 2N5401_D28Z