Fairchild/ON Semiconductor 2N5306
- Part Number:
- 2N5306
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2467343-2N5306
- Description:
- TRANS NPN DARL 25V 1.2A TO-92
- Datasheet:
- 2N5306
Fairchild/ON Semiconductor 2N5306 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor 2N5306.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Number of Pins3
- Supplier Device PackageTO-92-3
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- Published2002
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC25V
- Max Power Dissipation625mW
- Current Rating1.2A
- Base Part Number2N5306
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power - Max625mW
- Transistor TypeNPN - Darlington
- Collector Emitter Voltage (VCEO)25V
- Max Collector Current1.2A
- DC Current Gain (hFE) (Min) @ Ic, Vce7000 @ 2mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic1.4V @ 200μA, 200mA
- Collector Emitter Breakdown Voltage25V
- Voltage - Collector Emitter Breakdown (Max)25V
- Current - Collector (Ic) (Max)1.2A
- Collector Emitter Saturation Voltage1.4V
- Collector Base Voltage (VCBO)25V
- Emitter Base Voltage (VEBO)12V
- hFE Min20000
- Height5.33mm
- Length5.2mm
- Width4.19mm
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
2N5306 Description
2N5306 belongs to the family of silicon NPN epitaxial planar Darlington transistors provided by ON Semiconductor for applications where extremely high current gain at currents to 1.0A is required. Due to its high quality and reliable performance, it is well suited for high gain amplifier applications.
2N5306 Features
Available in the TO-92 package
Collector-emitter voltage of 25 V
Collector-base voltage of 25 V
Operating temperatures ranging from -55 °C to 150 °C
2N5306 Applications
High gain amplifier applications
2N5306 belongs to the family of silicon NPN epitaxial planar Darlington transistors provided by ON Semiconductor for applications where extremely high current gain at currents to 1.0A is required. Due to its high quality and reliable performance, it is well suited for high gain amplifier applications.
2N5306 Features
Available in the TO-92 package
Collector-emitter voltage of 25 V
Collector-base voltage of 25 V
Operating temperatures ranging from -55 °C to 150 °C
2N5306 Applications
High gain amplifier applications
2N5306 More Descriptions
Transistor 2N5306 Darlington NPN 25 Volt 1.2 Amp TO-92
Trans Darlington NPN 25V 1.2A 3-Pin TO-92 Bulk
Darlington Bipolar Transistor; Package/Case:TO-92; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Current Rating:1.2A; Mounting Type:Through Hole; Voltage Rating:25V ;RoHS Compliant: Yes
Trans Darlington NPN 25V 1.2A 3-Pin TO-92 Bulk
Darlington Bipolar Transistor; Package/Case:TO-92; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Current Rating:1.2A; Mounting Type:Through Hole; Voltage Rating:25V ;RoHS Compliant: Yes
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