ON Semiconductor 2N4923

2N4923 Overview
This device has a DC current gain of 30 @ 500mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 600mV.A VCE saturation (Max) of 600mV @ 100mA, 1A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A breakdown input voltage of 350V volts can be used.Product package TO-225AA comes from the supplier.Collector Emitter Breakdown occurs at 80VV - Maximum voltage.A maximum collector current of 1A volts is possible.

2N4923 Features
the DC current gain for this device is 30 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
the supplier device package of TO-225AA


2N4923 Applications
There are a lot of ON Semiconductor
2N4923 applications of single BJT transistors.


Inverter
Interface
Driver
Muting