ON Semiconductor 2N4920G
- Part Number:
- 2N4920G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2465269-2N4920G
- Description:
- TRANS PNP 80V 1A TO225AA
- Datasheet:
- 2N4920G
ON Semiconductor 2N4920G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N4920G.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time2 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-225AA, TO-126-3
- Surface MountNO
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingBulk
- Published2004
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-80V
- Max Power Dissipation30W
- Peak Reflow Temperature (Cel)260
- Current Rating-3A
- Frequency3MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part Number2N4920
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation30W
- Transistor ApplicationSWITCHING
- Halogen FreeHalogen Free
- Gain Bandwidth Product3MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current3A
- DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 500mA 1V
- Current - Collector Cutoff (Max)500μA
- Vce Saturation (Max) @ Ib, Ic600mV @ 100mA, 1A
- Collector Emitter Breakdown Voltage80V
- Current - Collector (Ic) (Max)1A
- Transition Frequency3MHz
- Collector Emitter Saturation Voltage600mV
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)5V
- hFE Min40
- Height11.049mm
- Length7.7216mm
- Width2.667mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2N4920G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30 @ 500mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 3MHz.During maximum operation, collector current can be as low as 3A volts.
2N4920G Features
the DC current gain for this device is 30 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 3MHz
2N4920G Applications
There are a lot of ON Semiconductor
2N4920G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30 @ 500mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 3MHz.During maximum operation, collector current can be as low as 3A volts.
2N4920G Features
the DC current gain for this device is 30 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 3MHz
2N4920G Applications
There are a lot of ON Semiconductor
2N4920G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N4920G More Descriptions
ON Semi PNP Bipolar Transistor, 1 A, 80 V, 3-Pin TO-225 | ON Semiconductor 2N4920G
1.0 A, 80 V PNP Bipolar Power Transistor
Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
Trans GP BJT PNP 80V 1A 30000mW 3-Pin(3 Tab) TO-225 Box
2N Series 80 V 1 A Medium-Power Plastic NPN Silicon Transistor - TO-225
TRANSISTOR, PNP, TO-126; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 3MHz; Power Dissipation Pd: 30W; DC Collector Current: 1A; DC Current Gain hFE: 10hFE; Transistor Case Style:
. . . designed for driver circuits switching and amplifier applications. These high-performance plastic devices feature:
Bipolar Transistor, Pnp -80V To-225; Transistor Polarity:Pnp; Collector Emitter Voltage Max:80V; Continuous Collector Current:3A; Power Dissipation:30W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:3Mhz Rohs Compliant: Yes |Onsemi 2N4920G
1.0 A, 80 V PNP Bipolar Power Transistor
Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
Trans GP BJT PNP 80V 1A 30000mW 3-Pin(3 Tab) TO-225 Box
2N Series 80 V 1 A Medium-Power Plastic NPN Silicon Transistor - TO-225
TRANSISTOR, PNP, TO-126; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 3MHz; Power Dissipation Pd: 30W; DC Collector Current: 1A; DC Current Gain hFE: 10hFE; Transistor Case Style:
. . . designed for driver circuits switching and amplifier applications. These high-performance plastic devices feature:
Bipolar Transistor, Pnp -80V To-225; Transistor Polarity:Pnp; Collector Emitter Voltage Max:80V; Continuous Collector Current:3A; Power Dissipation:30W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:3Mhz Rohs Compliant: Yes |Onsemi 2N4920G
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