Fairchild/ON Semiconductor 2N4125TF
- Part Number:
- 2N4125TF
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2466115-2N4125TF
- Description:
- TRANS PNP 30V 0.2A TO-92
- Datasheet:
- 2N4125
Fairchild/ON Semiconductor 2N4125TF technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor 2N4125TF.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device PackageTO-92-3
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Base Part Number2N4125
- Power - Max625mW
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 2mA 1V
- Current - Collector Cutoff (Max)50nA ICBO
- Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 50mA
- Voltage - Collector Emitter Breakdown (Max)30V
- Current - Collector (Ic) (Max)200mA
2N4125TF Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 50 @ 2mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 50mA.The product comes in the supplier device package of TO-92-3.A 30V maximal voltage - Collector Emitter Breakdown is present in the device.
2N4125TF Features
the DC current gain for this device is 50 @ 2mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
the supplier device package of TO-92-3
2N4125TF Applications
There are a lot of ON Semiconductor
2N4125TF applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 50 @ 2mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 50mA.The product comes in the supplier device package of TO-92-3.A 30V maximal voltage - Collector Emitter Breakdown is present in the device.
2N4125TF Features
the DC current gain for this device is 50 @ 2mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
the supplier device package of TO-92-3
2N4125TF Applications
There are a lot of ON Semiconductor
2N4125TF applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N4125TF More Descriptions
Small Signal Bipolar Transistor, 0.2A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
TRANS PNP 30V 0.2A TO-92
TRANS PNP 30V 0.2A TO-92
The three parts on the right have similar specifications to 2N4125TF.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Base Part NumberPower - MaxTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)PublishedFrequency - TransitionSurface MountTransistor Element MaterialPbfree CodeNumber of TerminationsTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationTransistor ApplicationPolarity/Channel TypeTransition FrequencyRoHS StatusView Compare
-
2N4125TFThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92-3-55°C~150°C TJTape & Reel (TR)Obsolete1 (Unlimited)2N4125625mWPNP50 @ 2mA 1V50nA ICBO400mV @ 5mA, 50mA30V200mA---------------------
-
Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92-3-55°C~150°C TJBulkObsolete1 (Unlimited)2N4123625mWNPN50 @ 2mA 1V50nA ICBO300mV @ 5mA, 50mA30V200mA1997250MHz------------------
-
Through HoleTO-226-3, TO-92-3 (TO-226AA)--55°C~150°C TJBulkObsolete1 (Unlimited)-625mWNPN120 @ 2mA 1V50nA ICBO300mV @ 5mA, 50mA25V200mA-300MHzNOSILICONyes3NOT SPECIFIEDBOTTOMNOT SPECIFIEDunknownNOT SPECIFIED3O-PBCY-T3COMMERCIAL1SINGLESWITCHINGNPN300MHzROHS3 Compliant
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92-3-55°C~150°C TJTape & Box (TB)Obsolete1 (Unlimited)2N4123625mWNPN50 @ 2mA 1V50nA ICBO300mV @ 5mA, 50mA30V200mA1997250MHz------------------
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