Fairchild/ON Semiconductor 2N4123TAR

Name: 2N4123TAR
Brand: Fairchild/ON Semiconductor
SKU: 3553841-2N4123TAR
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2N4123TAR

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3553841-2N4123TAR

Description:: TRANS NPN 30V 0.2A TO-92

ECAD Model:

Datasheet:: 2N4123

Specifications

Fairchild/ON Semiconductor 2N4123TAR technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor 2N4123TAR.

Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package
TO-92-3
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Box (TB)
Published
1997
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
2N4123
Power - Max
625mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 2mA 1V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
200mA
Frequency - Transition
250MHz

Description

2N4123TAR Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 2mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 5mA, 50mA.TO-92-3 is the supplier device package for this product.This device displays a 30V maximum voltage - Collector Emitter Breakdown.

2N4123TAR Features
the DC current gain for this device is 50 @ 2mA 1V
the vce saturation(Max) is 300mV @ 5mA, 50mA
the supplier device package of TO-92-3

2N4123TAR Applications
There are a lot of ON Semiconductor
2N4123TAR applications of single BJT transistors.

Inverter
Interface
Driver
Muting

2N4123TAR More Descriptions

Trans GP BJT NPN 30V 0.2A 3-Pin TO-92 Ammo

Certification