Central Semiconductor Corp 2N3964
- Part Number:
- 2N3964
- Manufacturer:
- Central Semiconductor Corp
- Ventron No:
- 2465249-2N3964
- Description:
- TRANS PNP 45V 0.2A TO-18
- Datasheet:
- 2N3964
Central Semiconductor Corp 2N3964 technical specifications, attributes, parameters and parts with similar specifications to Central Semiconductor Corp 2N3964.
- Factory Lead Time8 Weeks
- MountThrough Hole
- Package / CaseTO-18
- Transistor Element MaterialSILICON
- PackagingBulk
- Published2004
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Additional FeatureLOW NOISE
- SubcategoryOther Transistors
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeO-MBCY-W3
- Qualification StatusNot Qualified
- Operating Temperature (Max)175°C
- Number of Elements1
- PolarityPNP
- Power Dissipation-Max360mW
- Element ConfigurationSingle
- Gain Bandwidth Product40MHz
- Collector Emitter Voltage (VCEO)400mV
- Max Collector Current200mA
- Collector Emitter Breakdown Voltage45V
- Transition Frequency40MHz
- Collector Emitter Saturation Voltage250mV
- Frequency - Transition50MHz
- Collector Base Voltage (VCBO)45V
- Emitter Base Voltage (VEBO)6V
- hFE Min250
- DC Current Gain-Min (hFE)250
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
2N3964 Overview
The collector emitter saturation voltage is 250mV, giving you a wide variety of design options.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 40MHz.In extreme cases, the collector current can be as low as 200mA volts.
2N3964 Features
a collector emitter saturation voltage of 250mV
the emitter base voltage is kept at 6V
a transition frequency of 40MHz
2N3964 Applications
There are a lot of Central Semiconductor
2N3964 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The collector emitter saturation voltage is 250mV, giving you a wide variety of design options.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 40MHz.In extreme cases, the collector current can be as low as 200mA volts.
2N3964 Features
a collector emitter saturation voltage of 250mV
the emitter base voltage is kept at 6V
a transition frequency of 40MHz
2N3964 Applications
There are a lot of Central Semiconductor
2N3964 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N3964 More Descriptions
Bipolar Transistor NPN Amplifier/Switch 45V 200mA 3-Pin TO-18 Through Hole Box
2N3964 Series 45 V 200 mA 360 mW Through Hole Silicon PNP Transistor - TO-18
TRANS PNP 45V 0.2A TO18
2N3964 Series 45 V 200 mA 360 mW Through Hole Silicon PNP Transistor - TO-18
TRANS PNP 45V 0.2A TO18
The three parts on the right have similar specifications to 2N3964.
-
ImagePart NumberManufacturerFactory Lead TimeMountPackage / CaseTransistor Element MaterialPackagingPublishedJESD-609 CodePbfree CodePart StatusNumber of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusOperating Temperature (Max)Number of ElementsPolarityPower Dissipation-MaxElement ConfigurationGain Bandwidth ProductCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinDC Current Gain-Min (hFE)RoHS StatusLead FreeMounting TypeOperating TemperatureMoisture Sensitivity Level (MSL)Base Part NumberPower - MaxTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceVce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Supplier Device PackageSurface MountReach Compliance CodePin CountConfigurationTransistor ApplicationPolarity/Channel TypeTurn Off Time-Max (toff)Turn On Time-Max (ton)View Compare
-
2N39648 WeeksThrough HoleTO-18SILICONBulk2004e0noActive3EAR99Tin/Lead (Sn/Pb)LOW NOISEOther TransistorsBOTTOMWIRENOT SPECIFIEDNOT SPECIFIEDO-MBCY-W3Not Qualified175°C1PNP360mWSingle40MHz400mV200mA45V40MHz250mV50MHz45V6V250250RoHS CompliantLead Free--------------------
-
--TO-226-3, TO-92-3 (TO-226AA)-Bulk---Obsolete----------------------250MHz------Through Hole-55°C~150°C TJ1 (Unlimited)2N3906625mWPNP100 @ 10mA 1V400mV @ 5mA, 50mA40V200mA---------
-
--TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-Tape & Box (TB)---Obsolete-----------------------------Through Hole-55°C~150°C TJ1 (Unlimited)2N3903625mWNPN50 @ 10mA 1V300mV @ 5mA, 50mA40V200mATO-92-3--------
-
--TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)SILICONTape & Reel (TR)-e3yesObsolete3-MATTE TIN--BOTTOM-NOT APPLICABLENOT APPLICABLEO-PBCY-T3COMMERCIAL-1--------------ROHS3 Compliant-Through Hole-55°C~150°C TJ1 (Unlimited)-625mWPNP50 @ 10mA 1V400mV @ 5mA, 50mA40V200mA-NOunknown3SINGLESWITCHINGPNP260ns70ns
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