Fairchild/ON Semiconductor 2N3905TAR
- Part Number:
- 2N3905TAR
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3813414-2N3905TAR
- Description:
- TRANS PNP 40V 0.2A TO-92
- ECAD Model:
-
- Datasheet:
- 2N3905
Fairchild/ON Semiconductor 2N3905TAR technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor 2N3905TAR.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Box (TB)
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Base Part Number2N3905
- Power - Max625mW
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 10mA 1V
- Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 50mA
- Voltage - Collector Emitter Breakdown (Max)40V
- Current - Collector (Ic) (Max)200mA
2N3905TAR Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 50 @ 10mA 1V.When VCE saturation is 400mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).The device has a 40V maximal voltage - Collector Emitter Breakdown.
2N3905TAR Features
the DC current gain for this device is 50 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
2N3905TAR Applications
There are a lot of ON Semiconductor
2N3905TAR applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 50 @ 10mA 1V.When VCE saturation is 400mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).The device has a 40V maximal voltage - Collector Emitter Breakdown.
2N3905TAR Features
the DC current gain for this device is 50 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
2N3905TAR Applications
There are a lot of ON Semiconductor
2N3905TAR applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The three parts on the right have similar specifications to 2N3905TAR.
-
ImagePart NumberManufacturerMounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Base Part NumberPower - MaxTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceVce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Supplier Device PackageFrequency - TransitionSurface MountTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationTransistor ApplicationPolarity/Channel TypeTurn Off Time-Max (toff)Turn On Time-Max (ton)RoHS StatusView Compare
-
2N3905TARThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-55°C~150°C TJTape & Box (TB)Obsolete1 (Unlimited)2N3905625mWPNP50 @ 10mA 1V400mV @ 5mA, 50mA40V200mA----------------------- -
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-55°C~150°C TJTape & Box (TB)Obsolete1 (Unlimited)2N3903625mWNPN50 @ 10mA 1V300mV @ 5mA, 50mA40V200mATO-92-3---------------------
-
Through HoleTO-226-3, TO-92-3 (TO-226AA)-55°C~150°C TJBulkObsolete1 (Unlimited)2N3906625mWPNP100 @ 10mA 1V400mV @ 5mA, 50mA40V200mA-250MHz--------------------
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-55°C~150°C TJTape & Reel (TR)Obsolete1 (Unlimited)-625mWPNP50 @ 10mA 1V400mV @ 5mA, 50mA40V200mA--NOSILICONe3yes3MATTE TINBOTTOMNOT APPLICABLEunknownNOT APPLICABLE3O-PBCY-T3COMMERCIAL1SINGLESWITCHINGPNP260ns70nsROHS3 Compliant
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