Fairchild/ON Semiconductor 2N3906TFR
- Part Number:
- 2N3906TFR
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2463148-2N3906TFR
- Description:
- TRANS PNP 40V 0.2A TO-92
- Datasheet:
- 2N3906TFR
Fairchild/ON Semiconductor 2N3906TFR technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor 2N3906TFR.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time6 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Pins3
- Weight240mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC-40V
- Max Power Dissipation625mW
- Terminal PositionBOTTOM
- Current Rating-200mA
- Frequency250MHz
- Base Part Number2N3906
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation625mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product250MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current200mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA 1V
- Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 50mA
- Collector Emitter Breakdown Voltage40V
- Transition Frequency250MHz
- Collector Emitter Saturation Voltage-400mV
- Max Breakdown Voltage40V
- Collector Base Voltage (VCBO)-40V
- Emitter Base Voltage (VEBO)-5V
- hFE Min100
- Turn On Time-Max (ton)70ns
- Height5.33mm
- Length5.2mm
- Width4.19mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2N3906TFR Description
The ON Semiconductor 2N3906TFR is a TO-92 metal that can package PNP low-power silicon planar switching transistor. Because of its quick switching, this transistor is useful for switching and amplification.
2N3906TFR Features
DC current gain is greater than 30A at Ic=100mA
Multicomp Pro products are rated 4.6 out of 5 stars
12-month limited warranty *view Terms & Conditions for details
96% of customers would recommend to a friend
Collector emitter voltage (Vce) of 40V
Continuous collector current (Ic) of 200mA
Power dissipation of 625mW
Operating junction temperature range from -55??C to 150??C
2N3906TFR Applications
Various switching applications
Inverter & Converter
The ON Semiconductor 2N3906TFR is a TO-92 metal that can package PNP low-power silicon planar switching transistor. Because of its quick switching, this transistor is useful for switching and amplification.
2N3906TFR Features
DC current gain is greater than 30A at Ic=100mA
Multicomp Pro products are rated 4.6 out of 5 stars
12-month limited warranty *view Terms & Conditions for details
96% of customers would recommend to a friend
Collector emitter voltage (Vce) of 40V
Continuous collector current (Ic) of 200mA
Power dissipation of 625mW
Operating junction temperature range from -55??C to 150??C
2N3906TFR Applications
Various switching applications
Inverter & Converter
2N3906TFR More Descriptions
Transistor General Purpose BJT PNP 40 Volt 0.2 Amp 3-Pin TO-92 Tape and Reel
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Bipolar Transistors - BJT PNP Transistor General Purpose
200 mA, 40 V PNP Small Signal Bipolar Junction Transistor
Trans GP BJT PNP 40V 0.2A 625mW 3-Pin TO-92 T/R
2N3906 Series 40 V CE Breakdown 0.2 A PNP General Purpose Amplifier - TO-92
40V 625mW 200mA 100@10mA1V 250MHz 400mV@50mA5mA PNP -55¡Í~ 150¡Í@(Tj) TO-92-3L Bipolar Transistors - BJT ROHS
This device is designed for general purpose amplifier and switching applications at collector currents of 10 µA to 100 mA.
TRANSISTOR, PNP, -40V, TO-92; Transistor; TRANSISTOR, PNP, -40V, TO-92; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency Typ ft:250MHz; Power Dissipation Pd:625mW; DC Collector Current:200mA; DC Current Gain hFE:100
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Bipolar Transistors - BJT PNP Transistor General Purpose
200 mA, 40 V PNP Small Signal Bipolar Junction Transistor
Trans GP BJT PNP 40V 0.2A 625mW 3-Pin TO-92 T/R
2N3906 Series 40 V CE Breakdown 0.2 A PNP General Purpose Amplifier - TO-92
40V 625mW 200mA 100@10mA1V 250MHz 400mV@50mA5mA PNP -55¡Í~ 150¡Í@(Tj) TO-92-3L Bipolar Transistors - BJT ROHS
This device is designed for general purpose amplifier and switching applications at collector currents of 10 µA to 100 mA.
TRANSISTOR, PNP, -40V, TO-92; Transistor; TRANSISTOR, PNP, -40V, TO-92; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency Typ ft:250MHz; Power Dissipation Pd:625mW; DC Collector Current:200mA; DC Current Gain hFE:100
The three parts on the right have similar specifications to 2N3906TFR.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionCurrent RatingFrequencyBase Part NumberNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinTurn On Time-Max (ton)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionView Compare
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2N3906TFRACTIVE (Last Updated: 4 days ago)6 WeeksTinThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)3240mgSILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99Other Transistors-40V625mWBOTTOM-200mA250MHz2N39061Single625mWSWITCHING250MHzPNPPNP40V200mA100 @ 10mA 1V400mV @ 5mA, 50mA40V250MHz-400mV40V-40V-5V10070ns5.33mm5.2mm4.19mmNo SVHCNoROHS3 CompliantLead Free------
-
----Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)----55°C~150°C TJTape & Box (TB)---Obsolete1 (Unlimited)--------2N3903------NPN--50 @ 10mA 1V300mV @ 5mA, 50mA---------------TO-92-3625mW40V200mA-
-
----Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)----55°C~150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)--------2N3904------NPN--100 @ 10mA 1V300mV @ 5mA, 50mA---------------TO-92-3625mW40V200mA300MHz
-
----Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)----55°C~150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)--------2N3904------NPN--100 @ 10mA 1V300mV @ 5mA, 50mA---------------TO-92-3625mW40V200mA300MHz
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