Microsemi Corporation 2N2907AUB
- Part Number:
- 2N2907AUB
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2465203-2N2907AUB
- Description:
- TRANS PNP 60V 0.6A
- Datasheet:
- 2N2907AUB
Microsemi Corporation 2N2907AUB technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation 2N2907AUB.
- Factory Lead Time8 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case3-SMD, No Lead
- Number of Pins3
- Supplier Device PackageUB
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- Published2005
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature200°C
- Min Operating Temperature-65°C
- Max Power Dissipation500mW
- Number of Elements1
- PolarityPNP
- Power Dissipation500mW
- Power - Max500mW
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Current - Collector Cutoff (Max)50nA
- Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
- Collector Emitter Breakdown Voltage60V
- Voltage - Collector Emitter Breakdown (Max)60V
- Current - Collector (Ic) (Max)600mA
- Collector Emitter Saturation Voltage1.6V
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)5V
- hFE Min100
- Max Junction Temperature (Tj)200°C
- Height1.42mm
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
2N2907AUB Overview
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1.6V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Single BJT transistor comes in a supplier device package of UB.Detection of Collector Emitter Breakdown at 60V maximal voltage is present.The maximum collector current is 600mA volts.
2N2907AUB Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the supplier device package of UB
2N2907AUB Applications
There are a lot of Microsemi Corporation
2N2907AUB applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1.6V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Single BJT transistor comes in a supplier device package of UB.Detection of Collector Emitter Breakdown at 60V maximal voltage is present.The maximum collector current is 600mA volts.
2N2907AUB Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the supplier device package of UB
2N2907AUB Applications
There are a lot of Microsemi Corporation
2N2907AUB applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N2907AUB More Descriptions
Bulk Surface Mount PNP Single Bipolar (BJT) Transistor 100 @ 1mA 10V 600mA 300mW 60V
Bipolar Transistors - BJT PNP G.P. Transistor 3 Pin
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon
Surface mount PNP transistor, Voltage - Collector Emitter Breakdown 60V, LCC-3, RoHSTT Electronics SCT
Transistor,bjt,pnp,60V V(Br)Ceo,600Ma I(C),smt Rohs Compliant: Yes |Tt Electronics/optek Technology 2N2907AUB
Bipolar Transistors - BJT PNP G.P. Transistor 3 Pin
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon
Surface mount PNP transistor, Voltage - Collector Emitter Breakdown 60V, LCC-3, RoHSTT Electronics SCT
Transistor,bjt,pnp,60V V(Br)Ceo,600Ma I(C),smt Rohs Compliant: Yes |Tt Electronics/optek Technology 2N2907AUB
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