2N2907AUB

Microsemi Corporation 2N2907AUB

Part Number:
2N2907AUB
Manufacturer:
Microsemi Corporation
Ventron No:
2465203-2N2907AUB
Description:
TRANS PNP 60V 0.6A
ECAD Model:
Datasheet:
2N2907AUB

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Specifications
Microsemi Corporation 2N2907AUB technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation 2N2907AUB.
  • Factory Lead Time
    8 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    3-SMD, No Lead
  • Number of Pins
    3
  • Supplier Device Package
    UB
  • Operating Temperature
    -65°C~200°C TJ
  • Packaging
    Bulk
  • Published
    2005
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    200°C
  • Min Operating Temperature
    -65°C
  • Max Power Dissipation
    500mW
  • Number of Elements
    1
  • Polarity
    PNP
  • Power Dissipation
    500mW
  • Power - Max
    500mW
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    60V
  • Max Collector Current
    600mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 150mA 10V
  • Current - Collector Cutoff (Max)
    50nA
  • Vce Saturation (Max) @ Ib, Ic
    1.6V @ 50mA, 500mA
  • Collector Emitter Breakdown Voltage
    60V
  • Voltage - Collector Emitter Breakdown (Max)
    60V
  • Current - Collector (Ic) (Max)
    600mA
  • Collector Emitter Saturation Voltage
    1.6V
  • Collector Base Voltage (VCBO)
    60V
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    100
  • Max Junction Temperature (Tj)
    200°C
  • Height
    1.42mm
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
2N2907AUB Overview
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1.6V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Single BJT transistor comes in a supplier device package of UB.Detection of Collector Emitter Breakdown at 60V maximal voltage is present.The maximum collector current is 600mA volts.

2N2907AUB Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the supplier device package of UB


2N2907AUB Applications
There are a lot of Microsemi Corporation
2N2907AUB applications of single BJT transistors.


Inverter
Interface
Driver
Muting
2N2907AUB More Descriptions
Bulk Surface Mount PNP Single Bipolar (BJT) Transistor 100 @ 1mA 10V 600mA 300mW 60V
Bipolar Transistors - BJT PNP G.P. Transistor 3 Pin
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon
Surface mount PNP transistor, Voltage - Collector Emitter Breakdown 60V, LCC-3, RoHSTT Electronics SCT
Transistor,bjt,pnp,60V V(Br)Ceo,600Ma I(C),smt Rohs Compliant: Yes |Tt Electronics/optek Technology 2N2907AUB
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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