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2DD1664P-13

Diodes Incorporated 2DD1664P-13

Part Number:
2DD1664P-13
Manufacturer:
Diodes Incorporated
Ventron No:
2467076-2DD1664P-13
Description:
TRANS NPN 32V 1A SOT89-3
ECAD Model:
Datasheet:
2DD1664P-13

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Specifications
Diodes Incorporated 2DD1664P-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated 2DD1664P-13.
  • Factory Lead Time
    19 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-243AA
  • Number of Pins
    4
  • Weight
    51.993025mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2016
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    1W
  • Terminal Form
    FLAT
  • Peak Reflow Temperature (Cel)
    260
  • Frequency
    280MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    2DD1664
  • Pin Count
    4
  • JESD-30 Code
    R-PSSO-F3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    1W
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    280MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    32V
  • Max Collector Current
    1A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    82 @ 100mA 3V
  • Current - Collector Cutoff (Max)
    100nA
  • Vce Saturation (Max) @ Ib, Ic
    400mV @ 50mA, 500mA
  • Collector Emitter Breakdown Voltage
    32V
  • Transition Frequency
    280MHz
  • Max Breakdown Voltage
    32V
  • Collector Base Voltage (VCBO)
    40V
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    82
  • Height
    1.5mm
  • Length
    4.5mm
  • Width
    2.48mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
2DD1664P-13 Overview
In this device, the DC current gain is 82 @ 100mA 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.280MHz is present in the transition frequency.An input voltage of 32V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.

2DD1664P-13 Features
the DC current gain for this device is 82 @ 100mA 3V
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 280MHz


2DD1664P-13 Applications
There are a lot of Diodes Incorporated
2DD1664P-13 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
2DD1664P-13 More Descriptions
2DD1664P Series 32 V 1 A NPN Surface Mount Transistor - SOT-89-3
Trans GP BJT NPN 32V 1A 1000mW 4-Pin(3 Tab) SOT-89 T/R
NPN, 32V, 1A, SOT89,280MHzDiodes Inc SCT
OEMs, CMs ONLY (NO BROKERS)
Product Comparison
The three parts on the right have similar specifications to 2DD1664P-13.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Transistor Application
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Collector Emitter Saturation Voltage
    Terminal Position
    View Compare
  • 2DD1664P-13
    2DD1664P-13
    Diodes Incorporated
    19 Weeks
    Surface Mount
    Surface Mount
    TO-243AA
    4
    51.993025mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2016
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    Other Transistors
    1W
    FLAT
    260
    280MHz
    40
    2DD1664
    4
    R-PSSO-F3
    1
    Single
    1W
    COLLECTOR
    SWITCHING
    280MHz
    NPN
    NPN
    32V
    1A
    82 @ 100mA 3V
    100nA
    400mV @ 50mA, 500mA
    32V
    280MHz
    32V
    40V
    5V
    82
    1.5mm
    4.5mm
    2.48mm
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
  • 2DD1621T-13
    2DD1621T-13
    Diodes Incorporated
    19 Weeks
    Surface Mount
    Surface Mount
    TO-243AA
    4
    51.993025mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2008
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    Other Transistors
    1W
    FLAT
    260
    300MHz
    40
    2DD1621
    3
    R-PSSO-F3
    1
    Single
    1W
    COLLECTOR
    SWITCHING
    300MHz
    NPN
    NPN
    25V
    2A
    200 @ 100mA 2V
    100nA ICBO
    400mV @ 75mA, 1.5A
    25V
    300MHz
    25V
    30V
    6V
    -
    1.5mm
    4.5mm
    2.5mm
    No SVHC
    No
    ROHS3 Compliant
    400mV
    -
    2DD1664P-13 vs 2DD1621T-13
  • 2DD1664R-13
    2DD1664R-13
    Diodes Incorporated
    19 Weeks
    Surface Mount
    Surface Mount
    TO-243AA
    4
    51.993025mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2013
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    Other Transistors
    1W
    FLAT
    260
    280MHz
    40
    2DD1664
    4
    R-PSSO-F3
    1
    Single
    1W
    COLLECTOR
    SWITCHING
    280MHz
    NPN
    NPN
    32V
    1A
    180 @ 100mA 3V
    100nA
    400mV @ 50mA, 500mA
    32V
    280MHz
    32V
    40V
    6V
    -
    1.5mm
    4.5mm
    2.48mm
    No SVHC
    No
    ROHS3 Compliant
    400mV
    -
    2DD1664P-13 vs 2DD1664R-13
  • 2DD1766P-13
    2DD1766P-13
    Diodes Incorporated
    9 Weeks
    Surface Mount
    Surface Mount
    TO-243AA
    4
    51.993025mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2007
    e3
    yes
    Active
    1 (Unlimited)
    4
    EAR99
    Matte Tin (Sn)
    Other Transistors
    1W
    FLAT
    260
    220MHz
    40
    -
    4
    -
    1
    Single
    1W
    COLLECTOR
    SWITCHING
    220MHz
    NPN
    NPN
    32V
    2A
    82 @ 500mA 3V
    1μA ICBO
    800mV @ 200mA, 2A
    32V
    220MHz
    32V
    40V
    5V
    82
    1.5mm
    4.5mm
    2.48mm
    No SVHC
    No
    ROHS3 Compliant
    800mV
    DUAL
    2DD1664P-13 vs 2DD1766P-13
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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