Part Number: STGWT20V60DF vs STGW40S120DF3

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Part Number: STGWT20V60DF STGW40S120DF3
Manufacturer: STMicroelectronics STMicroelectronics
Description: IGBT 600V 40A 167W TO3P-3 IGBT 1200V 40A TO247
Quantity Available: Available Available
Datasheets: - -
Factory Lead Time 32 Weeks 41 Weeks
Mount Through Hole Surface Mount
Mounting Type Through Hole Through Hole
Package / Case TO-3P-3, SC-65-3 TO-247-3
Number of Pins 3 -
Operating Temperature -55°C~175°C TJ -55°C~175°C TJ
Packaging Tube Tube
Part Status Active Active
Moisture Sensitivity Level (MSL) 1 (Unlimited) Not Applicable
ECCN Code EAR99 EAR99
Subcategory Insulated Gate BIP Transistors -
Max Power Dissipation 167W 468W
Base Part Number STGWT20 STGW40
Element Configuration Single -
Power Dissipation 167W -
Input Type Standard Standard
Polarity/Channel Type N-CHANNEL N-CHANNEL
Collector Emitter Voltage (VCEO) 600V 2.15V
Max Collector Current 40A 80A
Reverse Recovery Time 40ns 355 ns
Collector Emitter Breakdown Voltage 600V 1.2kV
Collector Emitter Saturation Voltage 2.3V -
Test Condition 400V, 20A, 15V 600V, 40A, 15 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 20A 2.15V @ 15V, 40A
IGBT Type Trench Field Stop Trench Field Stop
Gate Charge 116nC 129nC
Current - Collector Pulsed (Icm) 80A 160A
Td (on/off) @ 25°C 38ns/149ns 35ns/148ns
Switching Energy 200μJ (on), 130μJ (off) 1.43mJ (on), 3.83mJ (off)
Gate-Emitter Voltage-Max 20V -
Height 26.7mm -
Length 15.7mm -
Width 5.7mm -
Radiation Hardening No -
RoHS Status ROHS3 Compliant ROHS3 Compliant
Transistor Element Material - SILICON
Number of Terminations - 3
Terminal Position - SINGLE
Peak Reflow Temperature (Cel) - NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) - NOT SPECIFIED
JESD-30 Code - R-PSFM-T3
Number of Elements - 1
Configuration - SINGLE WITH BUILT-IN DIODE
Case Connection - COLLECTOR
Power - Max - 468W
Transistor Application - POWER CONTROL
Voltage - Collector Emitter Breakdown (Max) - 1200V
Turn On Time - 50 ns
Turn Off Time-Nom (toff) - 158.46 ns
REACH SVHC - No SVHC
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