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STGWT20V60DF

STMicroelectronics STGWT20V60DF

Part Number:
STGWT20V60DF
Manufacturer:
STMicroelectronics
Ventron No:
2494330-STGWT20V60DF
Description:
IGBT 600V 40A 167W TO3P-3
ECAD Model:
Datasheet:
STGWT20V60DF

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Specifications
STMicroelectronics STGWT20V60DF technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGWT20V60DF.
  • Factory Lead Time
    32 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-3P-3, SC-65-3
  • Number of Pins
    3
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    167W
  • Base Part Number
    STGWT20
  • Element Configuration
    Single
  • Power Dissipation
    167W
  • Input Type
    Standard
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    600V
  • Max Collector Current
    40A
  • Reverse Recovery Time
    40ns
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    2.3V
  • Test Condition
    400V, 20A, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.2V @ 15V, 20A
  • IGBT Type
    Trench Field Stop
  • Gate Charge
    116nC
  • Current - Collector Pulsed (Icm)
    80A
  • Td (on/off) @ 25°C
    38ns/149ns
  • Switching Energy
    200μJ (on), 130μJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Height
    26.7mm
  • Length
    15.7mm
  • Width
    5.7mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
STGWT20V60DF Description
This gadget is an IGBT created using an innovative, exclusive trench gates and field stops structure. The apparatus is a member of the "V" series of IGBTs, which are the ideal compromise between switching losses and conduction to maximize very high-frequency effectiveness converters. Moreover, a successful VCE (sat) temperature coefficient and extremely precise parameter distribution make simultaneous operations safer.

STGWT20V60DF Features
Maximum junction temperature: TJ = 175 °C
Very high speed switching series
Tail-less switching off
Low saturation voltage: VCE(sat) = 1.8 V (typ.) @ IC = 20 A
Tight parameters distribution
Safe paralleling
Low thermal resistance
Very fast soft recovery antiparallel diode
Lead free package

STGWT20V60DF Applications
Photovoltaic inverters
Uninterruptible power supply
Welding
Power factor correction
Very high frequency converters
STGWT20V60DF More Descriptions
Trench gate field-stop IGBT, V series 600 V, 20 A very high speed
Trans IGBT Chip N-CH 600V 40A 167000mW 3-Pin(3 Tab) TO-3P Tube
IGBT Transistors 600V 20A High Speed Trench Gate IGBT
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel
IGBT Trench gate,600V 20A/100 deg,TO-3P
French Electronic Distributor since 1988
STMICROELECTRONICS STGWT20V60DF
Product Comparison
The three parts on the right have similar specifications to STGWT20V60DF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Subcategory
    Max Power Dissipation
    Base Part Number
    Element Configuration
    Power Dissipation
    Input Type
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Transistor Element Material
    Number of Terminations
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Configuration
    Case Connection
    Power - Max
    Transistor Application
    Voltage - Collector Emitter Breakdown (Max)
    Turn On Time
    Turn Off Time-Nom (toff)
    REACH SVHC
    Lifecycle Status
    Series
    Current - Collector (Ic) (Max)
    Weight
    JESD-609 Code
    Pbfree Code
    Terminal Finish
    Voltage - Rated DC
    Current Rating
    Pin Count
    Turn On Delay Time
    Rise Time
    Drain to Source Voltage (Vdss)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Input Capacitance
    Continuous Collector Current
    Gate-Emitter Thr Voltage-Max
    Lead Free
    View Compare
  • STGWT20V60DF
    STGWT20V60DF
    STMicroelectronics
    32 Weeks
    Through Hole
    Through Hole
    TO-3P-3, SC-65-3
    3
    -55°C~175°C TJ
    Tube
    Active
    1 (Unlimited)
    EAR99
    Insulated Gate BIP Transistors
    167W
    STGWT20
    Single
    167W
    Standard
    N-CHANNEL
    600V
    40A
    40ns
    600V
    2.3V
    400V, 20A, 15V
    2.2V @ 15V, 20A
    Trench Field Stop
    116nC
    80A
    38ns/149ns
    200μJ (on), 130μJ (off)
    20V
    26.7mm
    15.7mm
    5.7mm
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STGW40S120DF3
    STGW40S120DF3
    STMicroelectronics
    41 Weeks
    Surface Mount
    Through Hole
    TO-247-3
    -
    -55°C~175°C TJ
    Tube
    Active
    Not Applicable
    EAR99
    -
    468W
    STGW40
    -
    -
    Standard
    N-CHANNEL
    2.15V
    80A
    355 ns
    1.2kV
    -
    600V, 40A, 15 Ω, 15V
    2.15V @ 15V, 40A
    Trench Field Stop
    129nC
    160A
    35ns/148ns
    1.43mJ (on), 3.83mJ (off)
    -
    -
    -
    -
    -
    ROHS3 Compliant
    SILICON
    3
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSFM-T3
    1
    SINGLE WITH BUILT-IN DIODE
    COLLECTOR
    468W
    POWER CONTROL
    1200V
    50 ns
    158.46 ns
    No SVHC
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    STGWT20V60DF vs STGW40S120DF3
  • STGW10M65DF2
    STGW10M65DF2
    STMicroelectronics
    30 Weeks
    -
    Through Hole
    TO-247-3
    -
    -55°C~175°C TJ
    Tube
    Active
    1 (Unlimited)
    -
    -
    -
    STGW10
    -
    -
    Standard
    -
    -
    -
    96ns
    -
    -
    400V, 10A, 22 Ω, 15V
    2V @ 15V, 10A
    Trench Field Stop
    28nC
    40A
    19ns/91ns
    120μJ (on), 270μJ (off)
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    115W
    -
    650V
    -
    -
    -
    ACTIVE (Last Updated: 8 months ago)
    M
    20A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    STGWT20V60DF vs STGW10M65DF2
  • STGW40NC60WD
    STGW40NC60WD
    STMicroelectronics
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    -55°C~150°C TJ
    Tube
    Obsolete
    1 (Unlimited)
    EAR99
    Insulated Gate BIP Transistors
    250W
    STGW40
    Single
    250W
    Standard
    N-CHANNEL
    600V
    70A
    45 ns
    600V
    2.1V
    390V, 30A, 10 Ω, 15V
    2.5V @ 15V, 30A
    -
    126nC
    230A
    33ns/168ns
    302μJ (on), 349μJ (off)
    20V
    20.15mm
    15.75mm
    5.15mm
    No
    ROHS3 Compliant
    SILICON
    3
    -
    -
    -
    -
    1
    -
    -
    -
    POWER CONTROL
    -
    46 ns
    280 ns
    No SVHC
    -
    PowerMESH™
    -
    38.000013g
    e3
    yes
    Tin (Sn)
    600V
    40A
    3
    33 ns
    12ns
    650V
    168 ns
    40A
    TO-247AC
    2.9nF
    40A
    5.75V
    Lead Free
    STGWT20V60DF vs STGW40NC60WD
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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