Part Number: STGWT20V60DF vs STGW40NC60WD
| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |  |
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|---|---|---|
| Part Number: | STGWT20V60DF | STGW40NC60WD |
| Manufacturer: | STMicroelectronics | STMicroelectronics |
| Description: | IGBT 600V 40A 167W TO3P-3 | IGBT 600V 70A 250W TO247 |
| Quantity Available: | Available | Available |
| Datasheets: | - | - |
| Factory Lead Time | 32 Weeks | - |
| Mount | Through Hole | Through Hole |
| Mounting Type | Through Hole | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 | TO-247-3 |
| Number of Pins | 3 | 3 |
| Operating Temperature | -55°C~175°C TJ | -55°C~150°C TJ |
| Packaging | Tube | Tube |
| Part Status | Active | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) |
| ECCN Code | EAR99 | EAR99 |
| Subcategory | Insulated Gate BIP Transistors | Insulated Gate BIP Transistors |
| Max Power Dissipation | 167W | 250W |
| Base Part Number | STGWT20 | STGW40 |
| Element Configuration | Single | Single |
| Power Dissipation | 167W | 250W |
| Input Type | Standard | Standard |
| Polarity/Channel Type | N-CHANNEL | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 600V | 600V |
| Max Collector Current | 40A | 70A |
| Reverse Recovery Time | 40ns | 45 ns |
| Collector Emitter Breakdown Voltage | 600V | 600V |
| Collector Emitter Saturation Voltage | 2.3V | 2.1V |
| Test Condition | 400V, 20A, 15V | 390V, 30A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 20A | 2.5V @ 15V, 30A |
| IGBT Type | Trench Field Stop | - |
| Gate Charge | 116nC | 126nC |
| Current - Collector Pulsed (Icm) | 80A | 230A |
| Td (on/off) @ 25°C | 38ns/149ns | 33ns/168ns |
| Switching Energy | 200μJ (on), 130μJ (off) | 302μJ (on), 349μJ (off) |
| Gate-Emitter Voltage-Max | 20V | 20V |
| Height | 26.7mm | 20.15mm |
| Length | 15.7mm | 15.75mm |
| Width | 5.7mm | 5.15mm |
| Radiation Hardening | No | No |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant |
| Weight | - | 38.000013g |
| Transistor Element Material | - | SILICON |
| Series | - | PowerMESH™ |
| JESD-609 Code | - | e3 |
| Pbfree Code | - | yes |
| Number of Terminations | - | 3 |
| Terminal Finish | - | Tin (Sn) |
| Voltage - Rated DC | - | 600V |
| Current Rating | - | 40A |
| Pin Count | - | 3 |
| Number of Elements | - | 1 |
| Turn On Delay Time | - | 33 ns |
| Transistor Application | - | POWER CONTROL |
| Rise Time | - | 12ns |
| Drain to Source Voltage (Vdss) | - | 650V |
| Turn-Off Delay Time | - | 168 ns |
| Continuous Drain Current (ID) | - | 40A |
| JEDEC-95 Code | - | TO-247AC |
| Input Capacitance | - | 2.9nF |
| Turn On Time | - | 46 ns |
| Continuous Collector Current | - | 40A |
| Turn Off Time-Nom (toff) | - | 280 ns |
| Gate-Emitter Thr Voltage-Max | - | 5.75V |
| REACH SVHC | - | No SVHC |
| Lead Free | - | Lead Free |
| Submit RFQ: | Submit | Submit |
| Image | Part Number | Manufacturer | Description | Compare |
|---|---|---|---|---|
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STGW40NC60VD | ST | Compare | |
|
STGW40S120DF3 | STMicroelectronics | IGBT 1200V 40A TO247 | Compare |
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STGW40V60DLF | STMicroelectronics | IGBT 600V 80A 283W TO247 | Compare |
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STGW40V60DF | STMicroelectronics | IGBT 600V 80A 283W TO247 | Compare |
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STGW40M120DF3 | STMicroelectronics | IGBT 1200V 80A 468W TO-247 | Compare |
