Part Number: STGW30V60DF vs STGW40V60DLF
| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |  |
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|---|---|---|
| Part Number: | STGW30V60DF | STGW40V60DLF |
| Manufacturer: | STMicroelectronics | STMicroelectronics |
| Description: | IGBT 600V 60A 258W TO247 | IGBT 600V 80A 283W TO247 |
| Quantity Available: | Available | Available |
| Datasheets: | - | - |
| Factory Lead Time | 20 Weeks | 20 Weeks |
| Mount | Through Hole | Through Hole |
| Mounting Type | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-247-3 |
| Number of Pins | 3 | 3 |
| Transistor Element Material | SILICON | - |
| Operating Temperature | -55°C~175°C TJ | -55°C~175°C TJ |
| Packaging | Tube | Tube |
| Part Status | Active | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) |
| Number of Terminations | 3 | - |
| ECCN Code | EAR99 | EAR99 |
| Max Power Dissipation | 258W | 283W |
| Base Part Number | STGW30 | STGW40 |
| Number of Elements | 1 | - |
| Element Configuration | Single | Single |
| Power Dissipation | 258W | 283W |
| Input Type | Standard | Standard |
| Transistor Application | POWER CONTROL | - |
| Polarity/Channel Type | N-CHANNEL | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 600V | 600V |
| Max Collector Current | 60A | 80A |
| Reverse Recovery Time | 53 ns | - |
| Collector Emitter Breakdown Voltage | 600V | 600V |
| Collector Emitter Saturation Voltage | 2.35V | 2.35V |
| Turn On Time | 59 ns | - |
| Test Condition | 400V, 30A, 10 Ω, 15V | 400V, 40A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 30A | 2.3V @ 15V, 40A |
| Turn Off Time-Nom (toff) | 225 ns | - |
| IGBT Type | Trench Field Stop | Trench Field Stop |
| Gate Charge | 163nC | 226nC |
| Current - Collector Pulsed (Icm) | 120A | 160A |
| Td (on/off) @ 25°C | 45ns/189ns | -/208ns |
| Switching Energy | 383μJ (on), 233μJ (off) | 411μJ (off) |
| Height | 20.15mm | 20.15mm |
| Length | 15.75mm | 15.75mm |
| Width | 5.15mm | 5.15mm |
| Radiation Hardening | No | No |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant |
| Subcategory | - | Insulated Gate BIP Transistors |
| Gate-Emitter Voltage-Max | - | 20V |
| Submit RFQ: | Submit | Submit |
| Image | Part Number | Manufacturer | Description | Compare |
|---|---|---|---|---|
 |
STGW40NC60VD | ST | Compare | |
|
STGW40S120DF3 | STMicroelectronics | IGBT 1200V 40A TO247 | Compare |
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STGW40V60DF | STMicroelectronics | IGBT 600V 80A 283W TO247 | Compare |
|
STGW40M120DF3 | STMicroelectronics | IGBT 1200V 80A 468W TO-247 | Compare |
|
STGW40NC60WD | STMicroelectronics | IGBT 600V 70A 250W TO247 | Compare |
