Part Number: STGW30V60DF vs STGW40V60DF

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Part Number: STGW30V60DF STGW40V60DF
Manufacturer: STMicroelectronics STMicroelectronics
Description: IGBT 600V 60A 258W TO247 IGBT 600V 80A 283W TO247
Quantity Available: Available Available
Datasheets: - -
Factory Lead Time 20 Weeks 20 Weeks
Mount Through Hole Through Hole
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Number of Pins 3 3
Transistor Element Material SILICON -
Operating Temperature -55°C~175°C TJ -55°C~175°C TJ
Packaging Tube Tube
Part Status Active Active
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
Number of Terminations 3 -
ECCN Code EAR99 EAR99
Max Power Dissipation 258W 283W
Base Part Number STGW30 STGW40
Number of Elements 1 -
Element Configuration Single Single
Power Dissipation 258W 283W
Input Type Standard Standard
Transistor Application POWER CONTROL -
Polarity/Channel Type N-CHANNEL -
Collector Emitter Voltage (VCEO) 600V 600V
Max Collector Current 60A 80A
Reverse Recovery Time 53 ns 41ns
Collector Emitter Breakdown Voltage 600V 600V
Collector Emitter Saturation Voltage 2.35V 2.35V
Turn On Time 59 ns -
Test Condition 400V, 30A, 10 Ω, 15V 400V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 30A 2.3V @ 15V, 40A
Turn Off Time-Nom (toff) 225 ns -
IGBT Type Trench Field Stop Trench Field Stop
Gate Charge 163nC 226nC
Current - Collector Pulsed (Icm) 120A 160A
Td (on/off) @ 25°C 45ns/189ns 52ns/208ns
Switching Energy 383μJ (on), 233μJ (off) 456μJ (on), 411μJ (off)
Height 20.15mm 20.15mm
Length 15.75mm 15.75mm
Width 5.15mm 5.15mm
Radiation Hardening No No
RoHS Status ROHS3 Compliant ROHS3 Compliant
Lead Free - Lead Free
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