STMicroelectronics STGW30V60DF
- Part Number:
- STGW30V60DF
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2494313-STGW30V60DF
- Description:
- IGBT 600V 60A 258W TO247
- ECAD Model:
-
- Datasheet:
- STGW30V60DF
STMicroelectronics STGW30V60DF technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGW30V60DF.
- Factory Lead Time20 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Max Power Dissipation258W
- Base Part NumberSTGW30
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation258W
- Input TypeStandard
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)600V
- Max Collector Current60A
- Reverse Recovery Time53 ns
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage2.35V
- Turn On Time59 ns
- Test Condition400V, 30A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.3V @ 15V, 30A
- Turn Off Time-Nom (toff)225 ns
- IGBT TypeTrench Field Stop
- Gate Charge163nC
- Current - Collector Pulsed (Icm)120A
- Td (on/off) @ 25°C45ns/189ns
- Switching Energy383μJ (on), 233μJ (off)
- Height20.15mm
- Length15.75mm
- Width5.15mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
STGW30V60DF Description
The STGW30V60DF is an IGBT that was created with a patented trench gate field stop construction. The STGW30V60DF datasheet states that it is available in a TO-247-3 packaging from STMicroelectronics. The STGW30V60DF is part of the V series of IGBTs, which offer the best balance of conduction and switching losses for very high-frequency converter efficiency. In addition, a positive VCE(sat) temperature coefficient and a highly tight parameter distribution make paralleling safer.
STGW30V60DF Features
Safe paralleling
Tail-less switching off
Low thermal resistance
Tight parameters distribution
VCE(sat) = 1.85 V (typ.) @ IC = 30 A
Very fast soft recovery antiparallel diode
Maximum junction temperature: TJ = 175 °C
STGW30V60DF Applications Welding
Photovoltaic inverters
Power factor correction
Uninterruptible power supply
Very high frequency converters
The STGW30V60DF is an IGBT that was created with a patented trench gate field stop construction. The STGW30V60DF datasheet states that it is available in a TO-247-3 packaging from STMicroelectronics. The STGW30V60DF is part of the V series of IGBTs, which offer the best balance of conduction and switching losses for very high-frequency converter efficiency. In addition, a positive VCE(sat) temperature coefficient and a highly tight parameter distribution make paralleling safer.
STGW30V60DF Features
Safe paralleling
Tail-less switching off
Low thermal resistance
Tight parameters distribution
VCE(sat) = 1.85 V (typ.) @ IC = 30 A
Very fast soft recovery antiparallel diode
Maximum junction temperature: TJ = 175 °C
STGW30V60DF Applications Welding
Photovoltaic inverters
Power factor correction
Uninterruptible power supply
Very high frequency converters
STGW30V60DF More Descriptions
Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
V Series 600 V 60 A Through Hole Silicon IGBT - TO-247-3
Igbt, Single, 600V, 60A, To-247; Continuous Collector Current:60A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:258W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Stmicroelectronics STGW30V60DF
V Series 600 V 60 A Through Hole Silicon IGBT - TO-247-3
Igbt, Single, 600V, 60A, To-247; Continuous Collector Current:60A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:258W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Stmicroelectronics STGW30V60DF
The three parts on the right have similar specifications to STGW30V60DF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeMax Power DissipationBase Part NumberNumber of ElementsElement ConfigurationPower DissipationInput TypeTransistor ApplicationPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)IGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyHeightLengthWidthRadiation HardeningRoHS StatusSubcategoryGate-Emitter Voltage-MaxLead FreeLifecycle StatusWeightSeriesJESD-609 CodeTerminal FinishAdditional FeatureVoltage - Rated DCCurrent RatingPin CountTurn On Delay TimeRise TimeTurn-Off Delay TimeContinuous Collector CurrentGate-Emitter Thr Voltage-MaxREACH SVHCView Compare
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STGW30V60DF20 WeeksThrough HoleThrough HoleTO-247-33SILICON-55°C~175°C TJTubeActive1 (Unlimited)3EAR99258WSTGW301Single258WStandardPOWER CONTROLN-CHANNEL600V60A53 ns600V2.35V59 ns400V, 30A, 10 Ω, 15V2.3V @ 15V, 30A225 nsTrench Field Stop163nC120A45ns/189ns383μJ (on), 233μJ (off)20.15mm15.75mm5.15mmNoROHS3 Compliant------------------- -
20 WeeksThrough HoleThrough HoleTO-247-33--55°C~175°C TJTubeActive1 (Unlimited)-EAR99283WSTGW40-Single283WStandard-N-CHANNEL600V80A-600V2.35V-400V, 40A, 10 Ω, 15V2.3V @ 15V, 40A-Trench Field Stop226nC160A-/208ns411μJ (off)20.15mm15.75mm5.15mmNoROHS3 CompliantInsulated Gate BIP Transistors20V----------------
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20 WeeksThrough HoleThrough HoleTO-247-33--55°C~175°C TJTubeActive1 (Unlimited)-EAR99283WSTGW40-Single283WStandard--600V80A41ns600V2.35V-400V, 40A, 10 Ω, 15V2.3V @ 15V, 40A-Trench Field Stop226nC160A52ns/208ns456μJ (on), 411μJ (off)20.15mm15.75mm5.15mmNoROHS3 Compliant--Lead Free---------------
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8 WeeksThrough HoleThrough HoleTO-247-33SILICON-55°C~150°C TJTubeActive1 (Unlimited)3EAR99200WSTGW201Single200WStandardPOWER CONTROLN-CHANNEL600V60A44ns600V2.5V42.5 ns390V, 20A, 3.3 Ω, 15V2.5V @ 15V, 20A280 ns-100nC150A31ns/100ns220μJ (on), 330μJ (off)20.15mm15.75mm5.15mmNoROHS3 CompliantInsulated Gate BIP Transistors20VLead FreeACTIVE (Last Updated: 8 months ago)38.000013gPowerMESH™e3Tin (Sn)ULTRA FAST600V30A331 ns11.5ns100 ns30A5.75VNo SVHC
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