Micron Technology Inc. MT40A1G8WE-083E AIT:B

Name: MT40A1G8WE-083E AIT:B
Brand: Micron Technology Inc.
SKU: 7374440-MT40A1G8WE-083E AIT:B
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MT40A1G8WE-083E AIT:B

Manufacturer:: Micron Technology Inc.

Ventron No:: 7374440-MT40A1G8WE-083E AIT:B

Description:: Memory IC 12mm mm

ECAD Model:

Datasheet:: MT40A1G8WE-083E AIT:B

Specifications

Micron Technology Inc. MT40A1G8WE-083E AIT:B technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT40A1G8WE-083E AIT:B.

Factory Lead Time
16 Weeks
Mounting Type
Surface Mount
Package / Case
78-TFBGA
Surface Mount
YES
Operating Temperature
-40°C~95°C TC
Packaging
Tray
JESD-609 Code
e1
Part Status
Active
Number of Terminations
78
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature
AUTO/SELF REFRESH
Technology
SDRAM - DDR4
Voltage - Supply
1.14V~1.26V
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
Number of Functions
1
Supply Voltage
1.2V
Terminal Pitch
0.8mm
Reach Compliance Code
compliant
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PBGA-B78
Supply Voltage-Max (Vsup)
1.26V
Supply Voltage-Min (Vsup)
1.14V
Memory Size
8Gb 1G x 8
Number of Ports
1
Memory Type
Volatile
Operating Mode
SYNCHRONOUS
Clock Frequency
1.2GHz
Memory Format
DRAM
Memory Interface
Parallel
Organization
8GX8
Memory Width
8
Memory Density
68719476736 bit
Screening Level
AEC-Q100
Access Mode
MULTI BANK PAGE BURST
Length
12mm
Height Seated (Max)
1.2mm
Width
8mm
RoHS Status
RoHS Compliant

Description

MT40A1G8WE-083E AIT:B Overview
As far as memory types are concerned, Volatile is considered to be its memory type. In addition, memory ics is available in a Tray case as well. In the case of 78-TFBGA, it is embedded within the case. A memory chip with a capacity of 8Gb 1G x 8 is used on this device. There is a mainstream memory format used by this device, which is called DRAM-format memory. This device has an extended operating temperature range of -40°C~95°C TC, so it's perfect for a wide range of demanding applications. It is capable of handling a voltage supply of 1.14V~1.26V. As far as the mounting type is concerned, Surface Mount is recommended. On the chip, there are 78 terminations that are planted. The part supports at least 1 functions to ensure a comprehensive working process. In order to function properly, this ic memory chip should be powered by a voltage of 1.2V. In the memory, there is a clock frequency rotation that ranges 1.2GHz. The memory chip also offers AUTO/SELF REFRESH to level up system performance despite its merits. The memory chip has 1 ports for granting read/write access to one memory address.

MT40A1G8WE-083E AIT:B Features
Package / Case: 78-TFBGA
Additional Feature:AUTO/SELF REFRESH

MT40A1G8WE-083E AIT:B Applications
There are a lot of Micron Technology Inc.
MT40A1G8WE-083E AIT:B Memory applications.

servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM

MT40A1G8WE-083E AIT:B More Descriptions

NAND Flash Parallel 1.8V 1Gbit 128M x 8bit 30ns 63-Pin VFBGA Tray
DRAM, DDR4, 8Gb, x8, 78-ball FBGA, RoHSMicron SCT
IC DRAM 8GBIT PARALLEL 78FBGA
DDR4 8G 1GX8 FBGA Z01A
IC DRAM 8G PARALLEL 1.2GHZ
MICMT40A1G8WE-083E AIT:B

Product Comparison

The three parts on the right have similar specifications to MT40A1G8WE-083E AIT:B.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Operating Temperature

Packaging

JESD-609 Code

Part Status

Number of Terminations

Terminal Finish

Additional Feature

Technology

Voltage - Supply

Terminal Position

Peak Reflow Temperature (Cel)

Number of Functions

Supply Voltage

Terminal Pitch

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Supply Voltage-Max (Vsup)

Supply Voltage-Min (Vsup)

Memory Size

Number of Ports

Memory Type

Operating Mode

Clock Frequency

Memory Format

Memory Interface

Organization

Memory Width

Memory Density

Screening Level

Access Mode

Length

Height Seated (Max)

Width

RoHS Status

Terminal Form

Operating Temperature (Max)

Temperature Grade

Memory IC Type

Moisture Sensitivity Level (MSL)

View Compare
MT40A1G8WE-083E AIT:B

Micron Technology Inc.

16 Weeks

Surface Mount

78-TFBGA

YES

-40°C~95°C TC

Tray

e1

Active

78

Tin/Silver/Copper (Sn/Ag/Cu)

AUTO/SELF REFRESH

SDRAM - DDR4

1.14V~1.26V

BOTTOM

260

1

1.2V

0.8mm

compliant

30

R-PBGA-B78

1.26V

1.14V

8Gb 1G x 8

1

Volatile

SYNCHRONOUS

1.2GHz

DRAM

Parallel

8GX8

8

68719476736 bit

AEC-Q100

MULTI BANK PAGE BURST

12mm

1.2mm

8mm

RoHS Compliant

-

-

-

-

-

-
MT40A4G8BAF-062E:B

Micron Technology Inc.

-

-

-

-

-

Tray

-

Active

-

-

-

-

-

-

-

-

-

-

compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

MT40A1G8WE-083E AIT:B vs MT40A4G8BAF-062E:B
MT40A4G4DVN-062H:E

Micron Technology Inc.

-

-

-

YES

-

Tray

-

Active

78

-

AUTO/SELF REFRESH

CMOS

-

BOTTOM

-

1

1.2V

-

compliant

-

R-PBGA-B78

1.26V

1.14V

-

1

-

SYNCHRONOUS

-

-

-

4GX4

4

17179869184 bit

-

DUAL BANK PAGE BURST

-

-

-

-

BALL

95°C

OTHER

DDR DRAM

-

MT40A1G8WE-083E AIT:B vs MT40A4G4DVN-062H:E
MT40A512M8RH-083E AIT:B TR

Micron Technology Inc.

-

Surface Mount

78-TFBGA

-

-40°C~95°C TC

Tape & Reel (TR)

-

Last Time Buy

-

-

-

SDRAM - DDR4

1.14V~1.26V

-

-

-

-

-

-

-

-

-

-

4Gb 512M x 8

-

Volatile

-

1.2GHz

DRAM

Parallel

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

-

-

3 (168 Hours)

MT40A1G8WE-083E AIT:B vs MT40A512M8RH-083E AIT:B TR