Micron Technology Inc. MT40A4G4DVN-062H:E TR
- Part Number:
- MT40A4G4DVN-062H:E TR
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 7374686-MT40A4G4DVN-062H:E TR
- Description:
- Memory IC
- Datasheet:
- MT40A4G4DVN-062H:E TR
Micron Technology Inc. MT40A4G4DVN-062H:E TR technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT40A4G4DVN-062H:E TR.
- Surface MountYES
- PackagingTape & Reel (TR)
- Part StatusActive
- Number of Terminations78
- Additional FeatureAUTO/SELF REFRESH
- TechnologyCMOS
- Terminal PositionBOTTOM
- Terminal FormBALL
- Number of Functions1
- Supply Voltage1.2V
- Reach Compliance Codecompliant
- JESD-30 CodeR-PBGA-B78
- Operating Temperature (Max)95°C
- Supply Voltage-Max (Vsup)1.26V
- Temperature GradeOTHER
- Supply Voltage-Min (Vsup)1.14V
- Number of Ports1
- Operating ModeSYNCHRONOUS
- Organization4GX4
- Memory Width4
- Memory Density17179869184 bit
- Memory IC TypeDDR DRAM
- Access ModeDUAL BANK PAGE BURST
MT40A4G4DVN-062H:E TR Overview
There is a Tape & Reel (TR) case available. The chip has 78 terminations. For a comprehensive working procedure, this part supports as many as 1 functions. In order to operate this memory device, it must be supplied with 1.2V of power. Despite all its merits, this chip also features AUTO/SELF REFRESH to boost system performance. A memory address is accessed through 1 ports on this chip. This ic memory chip contains a DDR DRAM memory IC. The product should only be used at temperatures greater than 95°C.
MT40A4G4DVN-062H:E TR Features
Additional Feature:AUTO/SELF REFRESH
MT40A4G4DVN-062H:E TR Applications
There are a lot of Micron Technology Inc.
MT40A4G4DVN-062H:E TR Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
There is a Tape & Reel (TR) case available. The chip has 78 terminations. For a comprehensive working procedure, this part supports as many as 1 functions. In order to operate this memory device, it must be supplied with 1.2V of power. Despite all its merits, this chip also features AUTO/SELF REFRESH to boost system performance. A memory address is accessed through 1 ports on this chip. This ic memory chip contains a DDR DRAM memory IC. The product should only be used at temperatures greater than 95°C.
MT40A4G4DVN-062H:E TR Features
Additional Feature:AUTO/SELF REFRESH
MT40A4G4DVN-062H:E TR Applications
There are a lot of Micron Technology Inc.
MT40A4G4DVN-062H:E TR Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
MT40A4G4DVN-062H:E TR More Descriptions
3-Dimensional Stack DRAM Chip DDR4 SDRAM 16G-bit 4Gx4 78-Pin FBGA
IC FLASH 16GBIT PARALLEL 78FBGA
IC EEPROM 2K SPI 2MHZ 8SOIC
IC FLASH 16GBIT PARALLEL 78FBGA
IC EEPROM 2K SPI 2MHZ 8SOIC
The three parts on the right have similar specifications to MT40A4G4DVN-062H:E TR.
-
ImagePart NumberManufacturerSurface MountPackagingPart StatusNumber of TerminationsAdditional FeatureTechnologyTerminal PositionTerminal FormNumber of FunctionsSupply VoltageReach Compliance CodeJESD-30 CodeOperating Temperature (Max)Supply Voltage-Max (Vsup)Temperature GradeSupply Voltage-Min (Vsup)Number of PortsOperating ModeOrganizationMemory WidthMemory DensityMemory IC TypeAccess ModeMounting TypePackage / CaseOperating TemperatureMoisture Sensitivity Level (MSL)Voltage - SupplyMemory SizeMemory TypeClock FrequencyMemory FormatMemory InterfaceRoHS StatusView Compare
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MT40A4G4DVN-062H:E TRYESTape & Reel (TR)Active78AUTO/SELF REFRESHCMOSBOTTOMBALL11.2VcompliantR-PBGA-B7895°C1.26VOTHER1.14V1SYNCHRONOUS4GX4417179869184 bitDDR DRAMDUAL BANK PAGE BURST------------
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-TrayActive-------compliant-----------------------
-
YESTrayActive78AUTO/SELF REFRESHCMOSBOTTOMBALL11.2VcompliantR-PBGA-B7895°C1.26VOTHER1.14V1SYNCHRONOUS4GX4417179869184 bitDDR DRAMDUAL BANK PAGE BURST-----------
-
-Tape & Reel (TR)Last Time Buy--SDRAM - DDR4-----------------Surface Mount96-TFBGA-40°C~95°C TC3 (168 Hours)1.14V~1.26V4Gb 256M x 16Volatile1.2GHzDRAMParallelROHS3 Compliant
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