Micron Technology Inc. MT25QU02GCBB8E12-0AAT
- Part Number:
- MT25QU02GCBB8E12-0AAT
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 7373637-MT25QU02GCBB8E12-0AAT
- Description:
- Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series 8mm mm
- Datasheet:
- MT25QU02GCBB8E12-0AAT
Micron Technology Inc. MT25QU02GCBB8E12-0AAT technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT25QU02GCBB8E12-0AAT.
- Factory Lead Time9 Weeks
- Mounting TypeSurface Mount
- Package / Case24-TBGA
- Surface MountYES
- Operating Temperature-40°C~105°C TC
- PackagingBulk
- SeriesAutomotive, AEC-Q100
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations24
- TechnologyFLASH - NOR
- Voltage - Supply1.7V~2V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch1mm
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PBGA-B24
- Supply Voltage-Max (Vsup)2V
- Supply Voltage-Min (Vsup)1.7V
- Memory Size2Gb 256M x 8
- Memory TypeNon-Volatile
- Operating ModeSYNCHRONOUS
- Clock Frequency133MHz
- Memory FormatFLASH
- Memory InterfaceSPI
- Organization256MX8
- Memory Width8
- Write Cycle Time - Word, Page8ms, 2.8ms
- Memory Density2147483648 bit
- Parallel/SerialSERIAL
- Programming Voltage1.8V
- Length8mm
- Height Seated (Max)1.2mm
- Width6mm
- RoHS StatusROHS3 Compliant
MT25QU02GCBB8E12-0AAT Overview
In this case, the memory type of the device can be classified as Non-Volatile. Case Bulk is available. An embedded 24-TBGA case surrounds memory ics. It is estimated that the memory size on the chip is 2Gb 256M x 8. As with most mainstream devices, this one uses FLASH-format memory. Due to its wide temperature range of -40°C~105°C TC, this device is well suited to a wide range of applications that require high performance. With 1.7V~2V as the supply voltage, it is capable of handling memory ics. It is recommended to mount it in the Surface Mount mounting type. It is planted on the chip with 24 terminations. It supports up to 1 functions for comprehensive operation. There is a requirement for 1.8V to be supplied to this ic memory chip in order to operate. In order to operate effectively, the memory rotates at a clock frequency within a range of 133MHz. This part, which belongs to the Automotive, AEC-Q100 series of memory devices, plays an important role in its target applications. Nonvolatile memory arrays require 1.8V programming voltages to change their states.
MT25QU02GCBB8E12-0AAT Features
Package / Case: 24-TBGA
MT25QU02GCBB8E12-0AAT Applications
There are a lot of Micron Technology Inc.
MT25QU02GCBB8E12-0AAT Memory applications.
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
In this case, the memory type of the device can be classified as Non-Volatile. Case Bulk is available. An embedded 24-TBGA case surrounds memory ics. It is estimated that the memory size on the chip is 2Gb 256M x 8. As with most mainstream devices, this one uses FLASH-format memory. Due to its wide temperature range of -40°C~105°C TC, this device is well suited to a wide range of applications that require high performance. With 1.7V~2V as the supply voltage, it is capable of handling memory ics. It is recommended to mount it in the Surface Mount mounting type. It is planted on the chip with 24 terminations. It supports up to 1 functions for comprehensive operation. There is a requirement for 1.8V to be supplied to this ic memory chip in order to operate. In order to operate effectively, the memory rotates at a clock frequency within a range of 133MHz. This part, which belongs to the Automotive, AEC-Q100 series of memory devices, plays an important role in its target applications. Nonvolatile memory arrays require 1.8V programming voltages to change their states.
MT25QU02GCBB8E12-0AAT Features
Package / Case: 24-TBGA
MT25QU02GCBB8E12-0AAT Applications
There are a lot of Micron Technology Inc.
MT25QU02GCBB8E12-0AAT Memory applications.
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
MT25QU02GCBB8E12-0AAT More Descriptions
NOR Flash, MT25Q, 2Gb, 1.7V-2.0V, 166 MHz, 24-ball T-PBGA, RoHSMicron SCT
Serial NOR flash memory, 2Gbit, 4 I/Os, 1.8V, 166MHz, -40C to 105C
Active SERIAL BOTTOM Non-Volatile ic memory -40C~105C TC 1.7V 2147483648bit 6mm
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 1.8V 2G-bit 2G/1G/512M x 1/2-bit/4-bit 6ns Automotive 24-Pin TBGA T/R/Tray
NOR Flash SPI FLASH NOR SLC 512MX4 TBGA QDP
IC FLSH 2GBIT SPI 133MHZ 24TPBGA
ALTERA EP4CE6F17C7NFPGA, CYCLONE IV, 6K, 256FBGA
FLASH MEMORY, 2GBIT, -40 TO 105DEG C;
FLASH MEMORY, AEC-Q100, 2GBIT, 105DEG C; Flash Memory Type:Serial NOR; Memory Configuration:512M x 4bit; Interfaces:SPI; IC Case / Package:TBGA; No. of Pins:24Pins; Clock Frequency Max:166MHz; Access Time:-; Supply Voltage Min:1.7V RoHS Compliant: Yes
Serial NOR flash memory, 2Gbit, 4 I/Os, 1.8V, 166MHz, -40C to 105C
Active SERIAL BOTTOM Non-Volatile ic memory -40C~105C TC 1.7V 2147483648bit 6mm
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 1.8V 2G-bit 2G/1G/512M x 1/2-bit/4-bit 6ns Automotive 24-Pin TBGA T/R/Tray
NOR Flash SPI FLASH NOR SLC 512MX4 TBGA QDP
IC FLSH 2GBIT SPI 133MHZ 24TPBGA
ALTERA EP4CE6F17C7NFPGA, CYCLONE IV, 6K, 256FBGA
FLASH MEMORY, 2GBIT, -40 TO 105DEG C;
FLASH MEMORY, AEC-Q100, 2GBIT, 105DEG C; Flash Memory Type:Serial NOR; Memory Configuration:512M x 4bit; Interfaces:SPI; IC Case / Package:TBGA; No. of Pins:24Pins; Clock Frequency Max:166MHz; Access Time:-; Supply Voltage Min:1.7V RoHS Compliant: Yes
The three parts on the right have similar specifications to MT25QU02GCBB8E12-0AAT.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeOperating ModeClock FrequencyMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageMemory DensityParallel/SerialProgramming VoltageLengthHeight Seated (Max)WidthRoHS StatusView Compare
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MT25QU02GCBB8E12-0AAT9 WeeksSurface Mount24-TBGAYES-40°C~105°C TCBulkAutomotive, AEC-Q100Active3 (168 Hours)24FLASH - NOR1.7V~2VBOTTOM26011.8V1mm30R-PBGA-B242V1.7V2Gb 256M x 8Non-VolatileSYNCHRONOUS133MHzFLASHSPI256MX888ms, 2.8ms2147483648 bitSERIAL1.8V8mm1.2mm6mmROHS3 Compliant-
-
8 WeeksSurface Mount24-TBGA--40°C~125°C TATape & Reel (TR)Automotive, AEC-Q100Active3 (168 Hours)-FLASH - NOR1.7V~2V---------2Gb 256M x 8Non-Volatile-166MHzFLASHSPI--1.8ms------ROHS3 Compliant
-
8 WeeksSurface Mount24-TBGA--40°C~125°C TATape & Reel (TR)Automotive, AEC-Q100Active3 (168 Hours)-FLASH - NOR2.7V~3.6V---------2Gb 256M x 8Non-Volatile-133MHzFLASHSPI--1.8ms------ROHS3 Compliant
-
9 WeeksSurface Mount24-TBGA--40°C~125°C TATrayAutomotive, AEC-Q100Active3 (168 Hours)-FLASH - NOR2.7V~3.6V---------2Gb 256M x 8Non-Volatile-133MHzFLASHSPI--1.8ms------ROHS3 Compliant
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