Micron Technology Inc. MT25QL01GBBB1EW9-0SIT
- Part Number:
- MT25QL01GBBB1EW9-0SIT
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 7374637-MT25QL01GBBB1EW9-0SIT
- Description:
- Surface Mount Memory IC 1 Gb kb
- Datasheet:
- MT25QL01GBBB
Micron Technology Inc. MT25QL01GBBB1EW9-0SIT technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT25QL01GBBB1EW9-0SIT.
- Factory Lead Time9 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-WFDFN Exposed Pad
- Number of Pins8
- Operating Temperature-40°C~85°C TA
- PackagingBulk
- Part StatusActive
- Number of Terminations8
- TechnologyFLASH - NOR
- Voltage - Supply2.7V~3.6V
- Terminal PositionDUAL
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch1.27mm
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Operating Supply Voltage3V
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)2.7V
- Memory Size1Gb 128M x 8
- Memory TypeNon-Volatile
- Operating ModeSYNCHRONOUS
- Clock Frequency133MHz
- Access Time6 ns
- Memory FormatFLASH
- Memory InterfaceSPI
- Organization1GX1
- Memory Width1
- Write Cycle Time - Word, Page8ms, 2.8ms
- Density1 Gb
- Parallel/SerialSERIAL
- Programming Voltage3V
- Page Size256B
- Ambient Temperature Range High85°C
- Height800μm
- Width6mm
- RoHS StatusRoHS Compliant
MT25QL01GBBB1EW9-0SIT Overview
Non-Volatile is its memory type. It is available in a case with a Bulk shape. As you can see, it is embedded in 8-WFDFN Exposed Pad case. There is an 1Gb 128M x 8 memory capacity on the chip. In this device, the memory is of the FLASH-format, which is a popular format in the mainstream computing sector. Due to its extended operating temperature range, the device is well suited for a wide range of demanding applications. A voltage of 2.7V~3.6V is possible to be applied to the supply. There is a recommendation that Surface Mount mounting type should be used for this product. As you can see from the diagram, the chip is planted with 8 terminations. In total, 1 functions are supported by this part. The memory device designed for this application has been designed to be powered by an 3V power supply. With a clock frequency of 133MHz, the memory rotates on its own. It is encased in an 8-pin package that contains this ic memory chip. It is noted that the operating supply voltage of this memory is 3V. Chips such as this one are mounted using Surface Mount mounting, a straightforward method of mounting that is effective. A programming voltage of 3V is needed to alter the state of certain nonvolatile memory arrays.
MT25QL01GBBB1EW9-0SIT Features
Package / Case: 8-WFDFN Exposed Pad
8 Pins
Operating Supply Voltage:3V
MT25QL01GBBB1EW9-0SIT Applications
There are a lot of Micron Technology Inc.
MT25QL01GBBB1EW9-0SIT Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
Non-Volatile is its memory type. It is available in a case with a Bulk shape. As you can see, it is embedded in 8-WFDFN Exposed Pad case. There is an 1Gb 128M x 8 memory capacity on the chip. In this device, the memory is of the FLASH-format, which is a popular format in the mainstream computing sector. Due to its extended operating temperature range, the device is well suited for a wide range of demanding applications. A voltage of 2.7V~3.6V is possible to be applied to the supply. There is a recommendation that Surface Mount mounting type should be used for this product. As you can see from the diagram, the chip is planted with 8 terminations. In total, 1 functions are supported by this part. The memory device designed for this application has been designed to be powered by an 3V power supply. With a clock frequency of 133MHz, the memory rotates on its own. It is encased in an 8-pin package that contains this ic memory chip. It is noted that the operating supply voltage of this memory is 3V. Chips such as this one are mounted using Surface Mount mounting, a straightforward method of mounting that is effective. A programming voltage of 3V is needed to alter the state of certain nonvolatile memory arrays.
MT25QL01GBBB1EW9-0SIT Features
Package / Case: 8-WFDFN Exposed Pad
8 Pins
Operating Supply Voltage:3V
MT25QL01GBBB1EW9-0SIT Applications
There are a lot of Micron Technology Inc.
MT25QL01GBBB1EW9-0SIT Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
MT25QL01GBBB1EW9-0SIT More Descriptions
NOR Flash Serial-SPI 3V/3.3V 1G-bit 1G/512M/256M x 1/2-bit/4-bit 6ns 8-Pin WPDFN EP
Surface Mount Bulk 1GX1 FLASH - NOR ic memory 133MHz 6ns 6mm 1Gb
NOR Flash, MT25Q, 1Gb, 2.7V-3.6V, 133 MHz, W-PDFN-8, RoHSMicron SCT
NOR Flash SPI FLASH NOR SLC 256MX4 WPDFN DDP
IC WT25Q Serial Flash 1Gb Multi I/O
FLASH MEMORY, 1GBIT, -40 TO 85DEG C;
IC FLASH 1GBIT SPI 133MHZ 8WPDFN
TERM PC RA MALE .250"TAB .056"D
Flash Memory, 1Gbit, -40 To 85Deg C; Flash Memory Type:Serial Nor; Memory Configuration:256M X 4Bit; Interfaces:Spi; Ic Case/Package:Wpdfn-Ep; No. Of Pins:8Pins; Clock Frequency Max:133Mhz; Access Time:-; Supply Voltage Min:2.7V Rohs Compliant: Yes |Micron MT25QL01GBBB1EW9-0SIT
Surface Mount Bulk 1GX1 FLASH - NOR ic memory 133MHz 6ns 6mm 1Gb
NOR Flash, MT25Q, 1Gb, 2.7V-3.6V, 133 MHz, W-PDFN-8, RoHSMicron SCT
NOR Flash SPI FLASH NOR SLC 256MX4 WPDFN DDP
IC WT25Q Serial Flash 1Gb Multi I/O
FLASH MEMORY, 1GBIT, -40 TO 85DEG C;
IC FLASH 1GBIT SPI 133MHZ 8WPDFN
TERM PC RA MALE .250"TAB .056"D
Flash Memory, 1Gbit, -40 To 85Deg C; Flash Memory Type:Serial Nor; Memory Configuration:256M X 4Bit; Interfaces:Spi; Ic Case/Package:Wpdfn-Ep; No. Of Pins:8Pins; Clock Frequency Max:133Mhz; Access Time:-; Supply Voltage Min:2.7V Rohs Compliant: Yes |Micron MT25QL01GBBB1EW9-0SIT
The three parts on the right have similar specifications to MT25QL01GBBB1EW9-0SIT.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPart StatusNumber of TerminationsTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)Operating Supply VoltageSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeOperating ModeClock FrequencyAccess TimeMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageDensityParallel/SerialProgramming VoltagePage SizeAmbient Temperature Range HighHeightWidthRoHS StatusSeriesMoisture Sensitivity Level (MSL)View Compare
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MT25QL01GBBB1EW9-0SIT9 WeeksSurface MountSurface Mount8-WFDFN Exposed Pad8-40°C~85°C TABulkActive8FLASH - NOR2.7V~3.6VDUALNOT SPECIFIED13V1.27mmNOT SPECIFIED3V3.6V2.7V1Gb 128M x 8Non-VolatileSYNCHRONOUS133MHz6 nsFLASHSPI1GX118ms, 2.8ms1 GbSERIAL3V256B85°C800μm6mmRoHS Compliant---
-
8 Weeks-Surface Mount24-TBGA--40°C~125°C TATape & Reel (TR)Active-FLASH - NOR1.7V~2V---------2Gb 256M x 8Non-Volatile-166MHz-FLASHSPI--1.8ms-------ROHS3 CompliantAutomotive, AEC-Q1003 (168 Hours)
-
8 Weeks-Surface Mount24-TBGA--40°C~125°C TATape & Reel (TR)Active-FLASH - NOR2.7V~3.6V---------2Gb 256M x 8Non-Volatile-133MHz-FLASHSPI--1.8ms-------ROHS3 CompliantAutomotive, AEC-Q1003 (168 Hours)
-
9 Weeks-Surface Mount24-TBGA--40°C~125°C TATrayActive-FLASH - NOR2.7V~3.6V---------2Gb 256M x 8Non-Volatile-133MHz-FLASHSPI--1.8ms-------ROHS3 CompliantAutomotive, AEC-Q1003 (168 Hours)
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