Micron Technology Inc. MT25QU01GBBB1EW9-0SIT
- Part Number:
- MT25QU01GBBB1EW9-0SIT
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 7374640-MT25QU01GBBB1EW9-0SIT
- Description:
- Memory IC 1 Gb kb
- Datasheet:
- MT25QU01GBBB Datasheet
Micron Technology Inc. MT25QU01GBBB1EW9-0SIT technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT25QU01GBBB1EW9-0SIT.
- Factory Lead Time10 Weeks
- Mounting TypeSurface Mount
- Package / Case8-WDFN Exposed Pad
- Surface MountYES
- Number of Pins8
- Operating Temperature-40°C~85°C TA
- PackagingBulk
- Part StatusActive
- Number of Terminations8
- TechnologyFLASH - NOR
- Voltage - Supply1.7V~2V
- Terminal PositionDUAL
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch1.27mm
- Operating Supply Voltage1.8V
- Supply Voltage-Max (Vsup)2V
- Supply Voltage-Min (Vsup)1.7V
- InterfaceSPI, Serial
- Memory Size1Gb 128M x 8
- Memory TypeNon-Volatile
- Operating ModeSYNCHRONOUS
- Clock Frequency133MHz
- Memory FormatFLASH
- Memory InterfaceSPI
- Organization1GX1
- Memory Width1
- Write Cycle Time - Word, Page8ms, 2.8ms
- Density1 Gb
- Page Size256B
- Width6mm
- RoHS StatusRoHS Compliant
MT25QU01GBBB1EW9-0SIT Overview
A Non-Volatile-type memory can be classified as the memory type of this device. In addition, memory ics is available in a Bulk case as well. Embedded in the 8-WDFN Exposed Pad case, memory ics is a single file. On the chip, there is an 1Gb 128M x 8 memory, which is the size of the chip's memory. There is a FLASH-format memory used in this device, which is the memory format used by mainstream devices. Featuring an extended operating temperature range of -40°C~85°C TA, this device allows it to be used in a variety of demanding applications. The device is capable of handling a supply voltage of 1.7V~2V volts. The recommended mounting type for memory ics is Surface Mount. A total of 8 terminations have been planted on the chip. The comprehensive working procedure of this part involves 1 functions. In order to power this memory device, 1.8V will be necessary. A clock frequency rotation within 133MHz is used for the ic memory chip to rotate data. A 8-pin package containing this memory device is used to house this device. There is a note indicating that this memory chip operates at an 1.8V volt supply voltage.
MT25QU01GBBB1EW9-0SIT Features
Package / Case: 8-WDFN Exposed Pad
8 Pins
Operating Supply Voltage:1.8V
MT25QU01GBBB1EW9-0SIT Applications
There are a lot of Micron Technology Inc.
MT25QU01GBBB1EW9-0SIT Memory applications.
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
A Non-Volatile-type memory can be classified as the memory type of this device. In addition, memory ics is available in a Bulk case as well. Embedded in the 8-WDFN Exposed Pad case, memory ics is a single file. On the chip, there is an 1Gb 128M x 8 memory, which is the size of the chip's memory. There is a FLASH-format memory used in this device, which is the memory format used by mainstream devices. Featuring an extended operating temperature range of -40°C~85°C TA, this device allows it to be used in a variety of demanding applications. The device is capable of handling a supply voltage of 1.7V~2V volts. The recommended mounting type for memory ics is Surface Mount. A total of 8 terminations have been planted on the chip. The comprehensive working procedure of this part involves 1 functions. In order to power this memory device, 1.8V will be necessary. A clock frequency rotation within 133MHz is used for the ic memory chip to rotate data. A 8-pin package containing this memory device is used to house this device. There is a note indicating that this memory chip operates at an 1.8V volt supply voltage.
MT25QU01GBBB1EW9-0SIT Features
Package / Case: 8-WDFN Exposed Pad
8 Pins
Operating Supply Voltage:1.8V
MT25QU01GBBB1EW9-0SIT Applications
There are a lot of Micron Technology Inc.
MT25QU01GBBB1EW9-0SIT Memory applications.
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
MT25QU01GBBB1EW9-0SIT More Descriptions
NOR Flash Serial-SPI 1.8V 1Gbit 1024M/512M/256M 1bit/2bit/4bit 6ns 8-Pin WDFN
NOR Flash, MT25Q, 1Gb, 1.7V-2.0V, 166 MHz, W-PDFN-8, RoHSMicron SCT
Active SPI Serial DUAL Non-Volatile ic memory -40C~85C TA 1.7V 1Gb 6mm
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 1.8V 1G-bit 1G/512M/256M x 1/2-bit/2004-bit 6ns 8-Pin WPDFN EP Tray
NOR Flash SPI FLASH NOR SLC 256MX4 WPDFN DDP
IC FLASH 1GBIT SPI 133MHZ 8WPDFN
FLASH MEMORY, 1GBIT, -40 TO 85DEG C; Flash Memory Type:Serial NOR; Memory Configuration:256M x 4bit; Interfaces:SPI; IC Case / Package:WPDFN-EP; No. of Pins:8Pins; Clock Frequency Max:166MHz; Access Time:-; Supply Voltage Min:1.7V RoHS Compliant: Yes
NOR Flash, MT25Q, 1Gb, 1.7V-2.0V, 166 MHz, W-PDFN-8, RoHSMicron SCT
Active SPI Serial DUAL Non-Volatile ic memory -40C~85C TA 1.7V 1Gb 6mm
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 1.8V 1G-bit 1G/512M/256M x 1/2-bit/2004-bit 6ns 8-Pin WPDFN EP Tray
NOR Flash SPI FLASH NOR SLC 256MX4 WPDFN DDP
IC FLASH 1GBIT SPI 133MHZ 8WPDFN
FLASH MEMORY, 1GBIT, -40 TO 85DEG C; Flash Memory Type:Serial NOR; Memory Configuration:256M x 4bit; Interfaces:SPI; IC Case / Package:WPDFN-EP; No. of Pins:8Pins; Clock Frequency Max:166MHz; Access Time:-; Supply Voltage Min:1.7V RoHS Compliant: Yes
The three parts on the right have similar specifications to MT25QU01GBBB1EW9-0SIT.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingPart StatusNumber of TerminationsTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchOperating Supply VoltageSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)InterfaceMemory SizeMemory TypeOperating ModeClock FrequencyMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageDensityPage SizeWidthRoHS StatusSeriesMoisture Sensitivity Level (MSL)PublishedPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeMemory DensityParallel/SerialProgramming VoltageLengthHeight Seated (Max)View Compare
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MT25QU01GBBB1EW9-0SIT10 WeeksSurface Mount8-WDFN Exposed PadYES8-40°C~85°C TABulkActive8FLASH - NOR1.7V~2VDUAL11.8V1.27mm1.8V2V1.7VSPI, Serial1Gb 128M x 8Non-VolatileSYNCHRONOUS133MHzFLASHSPI1GX118ms, 2.8ms1 Gb256B6mmRoHS Compliant------------
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8 WeeksSurface Mount24-TBGA---40°C~125°C TATape & Reel (TR)Active-FLASH - NOR1.7V~2V--------2Gb 256M x 8Non-Volatile-166MHzFLASHSPI--1.8ms---ROHS3 CompliantAutomotive, AEC-Q1003 (168 Hours)---------
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8 WeeksSurface Mount24-TBGA---40°C~125°C TATape & Reel (TR)Active-FLASH - NOR2.7V~3.6V--------2Gb 256M x 8Non-Volatile-133MHzFLASHSPI--1.8ms---ROHS3 CompliantAutomotive, AEC-Q1003 (168 Hours)---------
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6 WeeksSurface Mount24-TBGAYES--40°C~105°C TABulkActive24FLASH - NOR2.7V~3.6VBOTTOM13V1mm-3.6V2.7V-256Mb 32M x 8Non-VolatileSYNCHRONOUS133MHzFLASHSPI32MX888ms, 2.8ms--6mmNon-RoHS CompliantAutomotive, AEC-Q100-2017NOT SPECIFIEDNOT SPECIFIEDR-PBGA-B24268435456 bitSERIAL3V8mm1.2mm
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