ISSI, Integrated Silicon Solution Inc IS64WV2568EDBLL-10BLA3
- Part Number:
- IS64WV2568EDBLL-10BLA3
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 7372570-IS64WV2568EDBLL-10BLA3
- Description:
- 2.5/3.3V V 36 Pin Memory IC 8mm mm
- Datasheet:
- IS64WV2568EDBLL-10BLA3
ISSI, Integrated Silicon Solution Inc IS64WV2568EDBLL-10BLA3 technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS64WV2568EDBLL-10BLA3.
- Factory Lead Time10 Weeks
- Mounting TypeSurface Mount
- Package / Case36-TFBGA
- Surface MountYES
- Number of Pins36
- Operating Temperature-40°C~125°C TA
- PackagingTray
- JESD-609 Codee1
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations36
- ECCN Code3A991.B.2.A
- Terminal FinishTIN SILVER COPPER
- Additional FeaturePIPELINED ARCHITECTURE
- HTS Code8542.32.00.41
- TechnologySRAM - Asynchronous
- Voltage - Supply2.4V~3.6V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage3.3V
- Terminal Pitch0.75mm
- Time@Peak Reflow Temperature-Max (s)10
- Pin Count36
- Qualification StatusNot Qualified
- Supply Voltage-Max (Vsup)3.6V
- Power Supplies2.5/3.3V
- Supply Voltage-Min (Vsup)2.4V
- Memory Size2Mb 256K x 8
- Memory TypeVolatile
- Supply Current-Max0.05mA
- Memory FormatSRAM
- Memory InterfaceParallel
- Organization256KX8
- Output Characteristics3-STATE
- Memory Width8
- Write Cycle Time - Word, Page10ns
- Standby Current-Max0.015A
- Memory Density2097152 bit
- Screening LevelAEC-Q100
- Access Time (Max)10 ns
- I/O TypeCOMMON
- Standby Voltage-Min2V
- Length8mm
- Height Seated (Max)1.2mm
- Width6mm
- RoHS StatusROHS3 Compliant
IS64WV2568EDBLL-10BLA3 Overview
There is a Volatile memory type associated with this device. Tray-cases are available. There is a 36-TFBGA case embedded in it. 2Mb 256K x 8 is the chip's memory size. SRAM-format memory is used in this device, which is a mainstream design. Due to its wide operating temperature range, this device can be used in a wide variety of demanding applications. The supply voltage can be up to 2.4V~3.6V. A Surface Mount mounting type is recommended for this product. The chip is terminated with 36 terminations. In total, this part supports 1 functions. Memory devices such as this one are designed to be powered by 3.3V and should be used as such. There are 36 pins on the package of the memory device. A memory device with 36 pins means that it contains 36 memory locations, indicating that it has 36 pins. Despite all the merits of this chip, it also has PIPELINED ARCHITECTURE to boost system performance. Power supplies for this memory chip are merely 2.5/3.3V . There are COMMON-bit addresses mapped into the memory for I/O ports on this device. In order for it to operate properly, memory ics requires a maximum supply current of 0.05mA .
IS64WV2568EDBLL-10BLA3 Features
Package / Case: 36-TFBGA
36 Pins
Additional Feature:PIPELINED ARCHITECTURE
I/O Type: COMMON
IS64WV2568EDBLL-10BLA3 Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS64WV2568EDBLL-10BLA3 Memory applications.
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
There is a Volatile memory type associated with this device. Tray-cases are available. There is a 36-TFBGA case embedded in it. 2Mb 256K x 8 is the chip's memory size. SRAM-format memory is used in this device, which is a mainstream design. Due to its wide operating temperature range, this device can be used in a wide variety of demanding applications. The supply voltage can be up to 2.4V~3.6V. A Surface Mount mounting type is recommended for this product. The chip is terminated with 36 terminations. In total, this part supports 1 functions. Memory devices such as this one are designed to be powered by 3.3V and should be used as such. There are 36 pins on the package of the memory device. A memory device with 36 pins means that it contains 36 memory locations, indicating that it has 36 pins. Despite all the merits of this chip, it also has PIPELINED ARCHITECTURE to boost system performance. Power supplies for this memory chip are merely 2.5/3.3V . There are COMMON-bit addresses mapped into the memory for I/O ports on this device. In order for it to operate properly, memory ics requires a maximum supply current of 0.05mA .
IS64WV2568EDBLL-10BLA3 Features
Package / Case: 36-TFBGA
36 Pins
Additional Feature:PIPELINED ARCHITECTURE
I/O Type: COMMON
IS64WV2568EDBLL-10BLA3 Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS64WV2568EDBLL-10BLA3 Memory applications.
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
IS64WV2568EDBLL-10BLA3 More Descriptions
SRAM - Asynchronous Memory IC 2Mb (256K x 8) Parallel 10 ns 36-TFBGA (6x8)
SRAM Chip Async Single 2.8V/3.3V 2M-Bit 256K x 8 10ns 36-Pin Mini-BGA
Serial SRAM, 256Kx8, 2.4 to 3.6V, BGA-36, RoHSISSI SCT
2Mb,high-Speed,async,256K X 8, 8Ns/3.3V, Or 10Ns/2.4V-3.6V, 36 Ball Mbga (6X8 Mm), Rohs, Automotive Temp, Ecc |Integrated Silicon Solution (Issi) IS64WV2568EDBLL-10BLA3
IC SRAM 2MBIT PARALLEL 36TFBGA
SRAM Chip Async Single 2.8V/3.3V 2M-Bit 256K x 8 10ns 36-Pin Mini-BGA
Serial SRAM, 256Kx8, 2.4 to 3.6V, BGA-36, RoHSISSI SCT
2Mb,high-Speed,async,256K X 8, 8Ns/3.3V, Or 10Ns/2.4V-3.6V, 36 Ball Mbga (6X8 Mm), Rohs, Automotive Temp, Ecc |Integrated Silicon Solution (Issi) IS64WV2568EDBLL-10BLA3
IC SRAM 2MBIT PARALLEL 36TFBGA
The three parts on the right have similar specifications to IS64WV2568EDBLL-10BLA3.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Memory SizeMemory TypeSupply Current-MaxMemory FormatMemory InterfaceOrganizationOutput CharacteristicsMemory WidthWrite Cycle Time - Word, PageStandby Current-MaxMemory DensityScreening LevelAccess Time (Max)I/O TypeStandby Voltage-MinLengthHeight Seated (Max)WidthRoHS StatusPbfree CodeClock FrequencyAccess TimeView Compare
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IS64WV2568EDBLL-10BLA310 WeeksSurface Mount36-TFBGAYES36-40°C~125°C TATraye1Active3 (168 Hours)363A991.B.2.ATIN SILVER COPPERPIPELINED ARCHITECTURE8542.32.00.41SRAM - Asynchronous2.4V~3.6VBOTTOM26013.3V0.75mm1036Not Qualified3.6V2.5/3.3V2.4V2Mb 256K x 8Volatile0.05mASRAMParallel256KX83-STATE810ns0.015A2097152 bitAEC-Q10010 nsCOMMON2V8mm1.2mm6mmROHS3 Compliant----
-
12 WeeksSurface Mount100-LQFPYES100-40°C~125°C TATape & Reel (TR)-Active3 (168 Hours)100--PIPELINED ARCHITECTURE-SRAM - Synchronous, SDR3.135V~3.465VQUADNOT SPECIFIED13.3V0.65mmNOT SPECIFIED--3.465V-3.135V4Mb 128K x 32Volatile-SRAMParallel128KX32-32--4194304 bit----20mm1.6mm14mmROHS3 Compliantyes200MHz3.1ns
-
10 WeeksSurface Mount44-TSOP (0.400, 10.16mm Width)YES44-40°C~125°C TATraye3Active3 (168 Hours)443A991.B.2.ATINPIPELINED ARCHITECTURE8542.32.00.41SRAM - Asynchronous2.4V~3.6VDUAL26013.3V0.8mm1044Not Qualified3.6V2.5/3.3V2.4V2Mb 256K x 8Volatile0.05mASRAMParallel256KX83-STATE810ns0.015A2097152 bitAEC-Q10010 nsCOMMON2V18.41mm1.2mm10.16mmROHS3 Compliant---
-
10 WeeksSurface Mount36-TFBGAYES36-40°C~125°C TATape & Reel (TR)e3Active3 (168 Hours)36-MATTE TIN--SRAM - Asynchronous2.4V~3.6VBOTTOM22513V0.75mmNOT SPECIFIED-Not Qualified3.6V2.5/3.3V2.4V4Mb 512K x 8Volatile0.065mASRAMParallel512KX83-STATE810ns0.015A4194304 bitAEC-Q10010 nsCOMMON2V8mm1.2mm6mmROHS3 Compliantyes--
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