ISSI, Integrated Silicon Solution Inc IS64WV5128EDBLL-10BLA3
- Part Number:
- IS64WV5128EDBLL-10BLA3
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 7374528-IS64WV5128EDBLL-10BLA3
- Description:
- 2.5/3.3V V 36 Pin Memory IC 4 Mb kb 8mm mm
- Datasheet:
- IS64WV5128EDBLL-10BLA3
ISSI, Integrated Silicon Solution Inc IS64WV5128EDBLL-10BLA3 technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS64WV5128EDBLL-10BLA3.
- Factory Lead Time10 Weeks
- Mounting TypeSurface Mount
- Package / Case36-TFBGA
- Surface MountYES
- Number of Pins36
- Operating Temperature-40°C~125°C TA
- PackagingTray
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations36
- TechnologySRAM - Asynchronous
- Voltage - Supply2.4V~3.6V
- Terminal PositionBOTTOM
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch0.75mm
- Pin Count36
- Supply Voltage-Max (Vsup)3.6V
- Power Supplies2.5/3.3V
- Supply Voltage-Min (Vsup)2.4V
- Memory Size4Mb 512K x 8
- Number of Ports1
- Memory TypeVolatile
- Supply Current-Max0.065mA
- Memory FormatSRAM
- Memory InterfaceParallel
- Output Characteristics3-STATE
- Memory Width8
- Write Cycle Time - Word, Page10ns
- Address Bus Width19b
- Density4 Mb
- I/O TypeCOMMON
- Standby Voltage-Min2V
- Length8mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
IS64WV5128EDBLL-10BLA3 Overview
Volatile is its memory type. It is available in a case with a Tray shape. As you can see, it is embedded in 36-TFBGA case. There is an 4Mb 512K x 8 memory capacity on the chip. In this device, the memory is of the SRAM-format, which is a popular format in the mainstream computing sector. Due to its extended operating temperature range, the device is well suited for a wide range of demanding applications. A voltage of 2.4V~3.6V is possible to be applied to the supply. There is a recommendation that Surface Mount mounting type should be used for this product. As you can see from the diagram, the chip is planted with 36 terminations. In total, 1 functions are supported by this part. The memory device designed for this application has been designed to be powered by an 3V power supply. It is encased in an 36-pin package that contains this ic memory chip. It has 36 pins indicating it has 36 memory locations. An address can be read and/or written to one memory address using 1 ports on the chip. This memory chip requires a mere 2.5/3.3V of power. In addition to this device, there are COMMON-bit memory mapped I/O port addresses on this device. This memory ics is capable of operating with an input current of 0.065mA at max.
IS64WV5128EDBLL-10BLA3 Features
Package / Case: 36-TFBGA
36 Pins
I/O Type: COMMON
IS64WV5128EDBLL-10BLA3 Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS64WV5128EDBLL-10BLA3 Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
Volatile is its memory type. It is available in a case with a Tray shape. As you can see, it is embedded in 36-TFBGA case. There is an 4Mb 512K x 8 memory capacity on the chip. In this device, the memory is of the SRAM-format, which is a popular format in the mainstream computing sector. Due to its extended operating temperature range, the device is well suited for a wide range of demanding applications. A voltage of 2.4V~3.6V is possible to be applied to the supply. There is a recommendation that Surface Mount mounting type should be used for this product. As you can see from the diagram, the chip is planted with 36 terminations. In total, 1 functions are supported by this part. The memory device designed for this application has been designed to be powered by an 3V power supply. It is encased in an 36-pin package that contains this ic memory chip. It has 36 pins indicating it has 36 memory locations. An address can be read and/or written to one memory address using 1 ports on the chip. This memory chip requires a mere 2.5/3.3V of power. In addition to this device, there are COMMON-bit memory mapped I/O port addresses on this device. This memory ics is capable of operating with an input current of 0.065mA at max.
IS64WV5128EDBLL-10BLA3 Features
Package / Case: 36-TFBGA
36 Pins
I/O Type: COMMON
IS64WV5128EDBLL-10BLA3 Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS64WV5128EDBLL-10BLA3 Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
IS64WV5128EDBLL-10BLA3 More Descriptions
SRAM Chip Async Single 2.5V/3.3V 4M-bit 512K x 8 10ns Automotive 36-Pin TFBGA
4Mb,High-Speed/Low Power,Async with ECC,512K x 8,10ns,2.4v-3.6v, 36 Ball mBGA (6x8mm), RoHS, Automotive temp
IC SRAM 4MBIT PARALLEL 36TFBGA
4Mb,High-Speed/Low Power,Async with ECC,512K x 8,10ns,2.4v-3.6v, 36 Ball mBGA (6x8mm), RoHS, Automotive temp
IC SRAM 4MBIT PARALLEL 36TFBGA
The three parts on the right have similar specifications to IS64WV5128EDBLL-10BLA3.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchPin CountSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeSupply Current-MaxMemory FormatMemory InterfaceOutput CharacteristicsMemory WidthWrite Cycle Time - Word, PageAddress Bus WidthDensityI/O TypeStandby Voltage-MinLengthRadiation HardeningRoHS StatusPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeOrganizationMemory DensityAccess Time (Max)Height Seated (Max)WidthPbfree CodeAdditional FeatureClock FrequencyAccess TimeJESD-609 CodeTerminal FinishQualification StatusStandby Current-MaxScreening LevelView Compare
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IS64WV5128EDBLL-10BLA310 WeeksSurface Mount36-TFBGAYES36-40°C~125°C TATrayActive3 (168 Hours)36SRAM - Asynchronous2.4V~3.6VBOTTOM13V0.75mm363.6V2.5/3.3V2.4V4Mb 512K x 81Volatile0.065mASRAMParallel3-STATE810ns19b4 MbCOMMON2V8mmNoROHS3 Compliant------------------
-
10 WeeksSurface Mount48-TFBGAYES--40°C~125°C TATape & Reel (TR)Active3 (168 Hours)48SRAM - Asynchronous2.4V~3.6VBOTTOM13V0.75mm-3.6V-2.4V8Mb 1M x 8-Volatile-SRAMParallel-810ns----8mm-ROHS3 CompliantNOT SPECIFIEDNOT SPECIFIEDR-PBGA-B481MX88388608 bit10 ns1.2mm6mm---------
-
12 WeeksSurface Mount100-LQFPYES100-40°C~125°C TATape & Reel (TR)Active3 (168 Hours)100SRAM - Synchronous, SDR3.135V~3.465VQUAD13.3V0.65mm-3.465V-3.135V4Mb 128K x 32-Volatile-SRAMParallel-32-----20mm-ROHS3 CompliantNOT SPECIFIEDNOT SPECIFIED-128KX324194304 bit-1.6mm14mmyesPIPELINED ARCHITECTURE200MHz3.1ns-----
-
10 WeeksSurface Mount36-TFBGAYES36-40°C~125°C TATape & Reel (TR)Active3 (168 Hours)36SRAM - Asynchronous2.4V~3.6VBOTTOM13V0.75mm-3.6V2.5/3.3V2.4V4Mb 512K x 8-Volatile0.065mASRAMParallel3-STATE810ns--COMMON2V8mm-ROHS3 Compliant225NOT SPECIFIED-512KX84194304 bit10 ns1.2mm6mmyes---e3MATTE TINNot Qualified0.015AAEC-Q100
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