ISSI, Integrated Silicon Solution Inc IS64WV10248EDBLL-10BLA3
- Part Number:
- IS64WV10248EDBLL-10BLA3
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 7374459-IS64WV10248EDBLL-10BLA3
- Description:
- 2.5/3.3V V Memory IC 8mm mm
- ECAD Model:
-
- Datasheet:
- IS64WV10248EDBLL-10BLA3
ISSI, Integrated Silicon Solution Inc IS64WV10248EDBLL-10BLA3 technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS64WV10248EDBLL-10BLA3.
- Factory Lead Time10 Weeks
- Mounting TypeSurface Mount
- Package / Case48-TFBGA
- Surface MountYES
- Operating Temperature-40°C~125°C TA
- PackagingTray
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations48
- TechnologySRAM - Asynchronous
- Voltage - Supply2.4V~3.6V
- Terminal PositionBOTTOM
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch0.75mm
- JESD-30 CodeR-PBGA-B48
- Qualification StatusNot Qualified
- Supply Voltage-Max (Vsup)3.6V
- Power Supplies2.5/3.3V
- Supply Voltage-Min (Vsup)2.4V
- Memory Size8Mb 1M x 8
- Memory TypeVolatile
- Supply Current-Max0.065mA
- Memory FormatSRAM
- Memory InterfaceParallel
- Organization1MX8
- Output Characteristics3-STATE
- Memory Width8
- Write Cycle Time - Word, Page10ns
- Standby Current-Max0.035A
- Memory Density8388608 bit
- Screening LevelAEC-Q100
- Access Time (Max)10 ns
- I/O TypeCOMMON
- Standby Voltage-Min2V
- Length8mm
- Height Seated (Max)1.2mm
- Width6mm
- RoHS StatusROHS3 Compliant
IS64WV10248EDBLL-10BLA3 Overview
In terms of its memory type, it can be classified as Volatile. The case comes in Tray size. The case is embedded in 48-TFBGA. Memory size on the chip is 8Mb 1M x 8. This device uses takes advantage of the SRAM format. The device's extended operating temperature range of -40°C~125°C TA makes it ideal for many demanding applications. The device is capable of handling a supply voltage of 2.4V~3.6V. The recommended mounting type for this device is Surface Mount. On the chip, there are 48 terminations. The comprehensive working procedure is supported by 1 functions in this part. A voltage of 3V is required for the operation of this memory device. This memory chip requires only 2.5/3.3V of power. A memory mapped I/O port address of COMMON bits is used in this device. With a maximum supply current of 0.065mA , it is able to operate from a variety of supplies.
IS64WV10248EDBLL-10BLA3 Features
Package / Case: 48-TFBGA
I/O Type: COMMON
IS64WV10248EDBLL-10BLA3 Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS64WV10248EDBLL-10BLA3 Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
In terms of its memory type, it can be classified as Volatile. The case comes in Tray size. The case is embedded in 48-TFBGA. Memory size on the chip is 8Mb 1M x 8. This device uses takes advantage of the SRAM format. The device's extended operating temperature range of -40°C~125°C TA makes it ideal for many demanding applications. The device is capable of handling a supply voltage of 2.4V~3.6V. The recommended mounting type for this device is Surface Mount. On the chip, there are 48 terminations. The comprehensive working procedure is supported by 1 functions in this part. A voltage of 3V is required for the operation of this memory device. This memory chip requires only 2.5/3.3V of power. A memory mapped I/O port address of COMMON bits is used in this device. With a maximum supply current of 0.065mA , it is able to operate from a variety of supplies.
IS64WV10248EDBLL-10BLA3 Features
Package / Case: 48-TFBGA
I/O Type: COMMON
IS64WV10248EDBLL-10BLA3 Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS64WV10248EDBLL-10BLA3 Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
IS64WV10248EDBLL-10BLA3 More Descriptions
SRAM - Asynchronous Memory IC 8Mb (1M x 8) Parallel 10 ns 48-TFBGA (6x8)
SRAM Chip Async Single 3.3V 8M-Bit 1M x 8 10ns 48-Pin Mini-BGA
SRAM 8Mb,High-Speed-Automotive,Async with ECC,1M x 8,10ns,2.4v-3.6v,48 Ball mBGA (6x8mm), RoHS, Automotive temp
IC SRAM 8MBIT PARALLEL 48TFBGA
SRAM Chip Async Single 3.3V 8M-Bit 1M x 8 10ns 48-Pin Mini-BGA
SRAM 8Mb,High-Speed-Automotive,Async with ECC,1M x 8,10ns,2.4v-3.6v,48 Ball mBGA (6x8mm), RoHS, Automotive temp
IC SRAM 8MBIT PARALLEL 48TFBGA
The three parts on the right have similar specifications to IS64WV10248EDBLL-10BLA3.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchJESD-30 CodeQualification StatusSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Memory SizeMemory TypeSupply Current-MaxMemory FormatMemory InterfaceOrganizationOutput CharacteristicsMemory WidthWrite Cycle Time - Word, PageStandby Current-MaxMemory DensityScreening LevelAccess Time (Max)I/O TypeStandby Voltage-MinLengthHeight Seated (Max)WidthRoHS StatusNumber of PinsPbfree CodeAdditional FeaturePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Clock FrequencyAccess TimeJESD-609 CodeECCN CodeTerminal FinishHTS CodePin CountView Compare
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IS64WV10248EDBLL-10BLA310 WeeksSurface Mount48-TFBGAYES-40°C~125°C TATrayActive3 (168 Hours)48SRAM - Asynchronous2.4V~3.6VBOTTOM13V0.75mmR-PBGA-B48Not Qualified3.6V2.5/3.3V2.4V8Mb 1M x 8Volatile0.065mASRAMParallel1MX83-STATE810ns0.035A8388608 bitAEC-Q10010 nsCOMMON2V8mm1.2mm6mmROHS3 Compliant------------- -
12 WeeksSurface Mount100-LQFPYES-40°C~125°C TATape & Reel (TR)Active3 (168 Hours)100SRAM - Synchronous, SDR3.135V~3.465VQUAD13.3V0.65mm--3.465V-3.135V4Mb 128K x 32Volatile-SRAMParallel128KX32-32--4194304 bit----20mm1.6mm14mmROHS3 Compliant100yesPIPELINED ARCHITECTURENOT SPECIFIEDNOT SPECIFIED200MHz3.1ns-----
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10 WeeksSurface Mount36-TFBGAYES-40°C~125°C TATrayActive3 (168 Hours)36SRAM - Asynchronous2.4V~3.6VBOTTOM13.3V0.75mm-Not Qualified3.6V2.5/3.3V2.4V2Mb 256K x 8Volatile0.05mASRAMParallel256KX83-STATE810ns0.015A2097152 bitAEC-Q10010 nsCOMMON2V8mm1.2mm6mmROHS3 Compliant36-PIPELINED ARCHITECTURE26010--e13A991.B.2.ATIN SILVER COPPER8542.32.00.4136
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10 WeeksSurface Mount36-TFBGAYES-40°C~125°C TATape & Reel (TR)Active3 (168 Hours)36SRAM - Asynchronous2.4V~3.6VBOTTOM13V0.75mm-Not Qualified3.6V2.5/3.3V2.4V4Mb 512K x 8Volatile0.065mASRAMParallel512KX83-STATE810ns0.015A4194304 bitAEC-Q10010 nsCOMMON2V8mm1.2mm6mmROHS3 Compliant36yes-225NOT SPECIFIED--e3-MATTE TIN--
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ISSI, Integrated Silicon Solution Inc
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