ISSI, Integrated Silicon Solution Inc IS43TR82560CL-125KBLI
- Part Number:
- IS43TR82560CL-125KBLI
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 7374571-IS43TR82560CL-125KBLI
- Description:
- Memory IC 10.5mm mm
- Datasheet:
- IS43TR82560CL-125KBLI
ISSI, Integrated Silicon Solution Inc IS43TR82560CL-125KBLI technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS43TR82560CL-125KBLI.
- Factory Lead Time8 Weeks
- Mounting TypeSurface Mount
- Package / Case78-TFBGA
- Surface MountYES
- Operating Temperature-40°C~95°C TC
- PackagingTray
- JESD-609 Codee1
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations78
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Additional FeaturePROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
- TechnologySDRAM - DDR3L
- Voltage - Supply1.283V~1.45V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage1.35V
- Terminal Pitch0.8mm
- Time@Peak Reflow Temperature-Max (s)10
- JESD-30 CodeR-PBGA-B78
- Supply Voltage-Max (Vsup)1.45V
- Supply Voltage-Min (Vsup)1.283V
- Memory Size2Gb 256M x 8
- Number of Ports1
- Memory TypeVolatile
- Operating ModeSYNCHRONOUS
- Clock Frequency800MHz
- Access Time20ns
- Memory FormatDRAM
- Memory InterfaceParallel
- Organization256MX8
- Memory Width8
- Write Cycle Time - Word, Page15ns
- Memory Density2147483648 bit
- Length10.5mm
- Height Seated (Max)1.2mm
- Width8mm
- RoHS StatusROHS3 Compliant
IS43TR82560CL-125KBLI Overview
Volatile is its memory type. It is available in a case with a Tray shape. As you can see, it is embedded in 78-TFBGA case. There is an 2Gb 256M x 8 memory capacity on the chip. In this device, the memory is of the DRAM-format, which is a popular format in the mainstream computing sector. Due to its extended operating temperature range, the device is well suited for a wide range of demanding applications. A voltage of 1.283V~1.45V is possible to be applied to the supply. There is a recommendation that Surface Mount mounting type should be used for this product. As you can see from the diagram, the chip is planted with 78 terminations. In total, 1 functions are supported by this part. The memory device designed for this application has been designed to be powered by an 1.35V power supply. With a clock frequency of 800MHz, the memory rotates on its own. While this memory chip features many merits, it also offers PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH for improving system performance. An address can be read and/or written to one memory address using 1 ports on the chip.
IS43TR82560CL-125KBLI Features
Package / Case: 78-TFBGA
Additional Feature:PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
IS43TR82560CL-125KBLI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS43TR82560CL-125KBLI Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
Volatile is its memory type. It is available in a case with a Tray shape. As you can see, it is embedded in 78-TFBGA case. There is an 2Gb 256M x 8 memory capacity on the chip. In this device, the memory is of the DRAM-format, which is a popular format in the mainstream computing sector. Due to its extended operating temperature range, the device is well suited for a wide range of demanding applications. A voltage of 1.283V~1.45V is possible to be applied to the supply. There is a recommendation that Surface Mount mounting type should be used for this product. As you can see from the diagram, the chip is planted with 78 terminations. In total, 1 functions are supported by this part. The memory device designed for this application has been designed to be powered by an 1.35V power supply. With a clock frequency of 800MHz, the memory rotates on its own. While this memory chip features many merits, it also offers PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH for improving system performance. An address can be read and/or written to one memory address using 1 ports on the chip.
IS43TR82560CL-125KBLI Features
Package / Case: 78-TFBGA
Additional Feature:PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
IS43TR82560CL-125KBLI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS43TR82560CL-125KBLI Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
IS43TR82560CL-125KBLI More Descriptions
MEMORY MODULE, SDRAM, DDR3, 256Mx8, 2GB, 78-pin BGA, Bulk
DRAM Chip DDR3L SDRAM 2Gbit 256Mx8 1.35V 78-Pin TW-BGA
DDR SDRAM, 256Mx8, 1.35V, 8K, BGA-78,RoHSISSI SCT
IC DRAM 2GBIT PARALLEL 78TWBGA
DRAM 2G 256Mx8 1600MT/s DDR3L 1.35V
2G, 1.35V, Ddr3L, 256Mx8, 1600Mt/S @ 11-11-11, 78 Ball Bga (8Mm X10.5Mm) Rohs, It |Integrated Silicon Solution (Issi) IS43TR82560CL-125KBLI
DRAM Chip DDR3L SDRAM 2Gbit 256Mx8 1.35V 78-Pin TW-BGA
DDR SDRAM, 256Mx8, 1.35V, 8K, BGA-78,RoHSISSI SCT
IC DRAM 2GBIT PARALLEL 78TWBGA
DRAM 2G 256Mx8 1600MT/s DDR3L 1.35V
2G, 1.35V, Ddr3L, 256Mx8, 1600Mt/S @ 11-11-11, 78 Ball Bga (8Mm X10.5Mm) Rohs, It |Integrated Silicon Solution (Issi) IS43TR82560CL-125KBLI
The three parts on the right have similar specifications to IS43TR82560CL-125KBLI.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeOperating ModeClock FrequencyAccess TimeMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageMemory DensityLengthHeight Seated (Max)WidthRoHS StatusNumber of PinsQualification StatusPower SuppliesSupply Current-MaxOutput CharacteristicsStandby Current-MaxI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthView Compare
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IS43TR82560CL-125KBLI8 WeeksSurface Mount78-TFBGAYES-40°C~95°C TCTraye1Active3 (168 Hours)78EAR99Tin/Silver/Copper (Sn/Ag/Cu)PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESHSDRAM - DDR3L1.283V~1.45VBOTTOM26011.35V0.8mm10R-PBGA-B781.45V1.283V2Gb 256M x 81VolatileSYNCHRONOUS800MHz20nsDRAMParallel256MX8815ns2147483648 bit10.5mm1.2mm8mmROHS3 Compliant-----------
-
14 WeeksSurface Mount90-LFBGAYES0°C~70°C TATray-Active3 (168 Hours)90--AUTO/SELF REFRESHSDRAM - Mobile LPDDR1.7V~1.95VBOTTOM-11.8V0.8mm--1.95V1.7V64Mb 2M x 321VolatileSYNCHRONOUS166MHz5.5nsDRAMParallel32MX323215ns1073741824 bit13mm1.45mm8mmROHS3 Compliant90Not Qualified1.8V0.22mA3-STATE0.00002ACOMMON81922481624816
-
8 WeeksSurface Mount60-TFBGAYES-40°C~85°C TATray-Active3 (168 Hours)60EAR99-PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESHSDRAM - DDR2.3V~2.7VBOTTOMNOT SPECIFIED12.5V1mmNOT SPECIFIEDR-PBGA-B602.7V2.3V512Mb 32M x 161VolatileSYNCHRONOUS200MHz700psDRAMParallel32MX161615ns536870912 bit13mm1.2mm8mmROHS3 Compliant----------
-
8 WeeksSurface Mount60-TFBGAYES-40°C~85°C TATray-Active3 (168 Hours)60EAR99-PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESHSDRAM - DDR2.3V~2.7VBOTTOMNOT SPECIFIED12.5V1mmNOT SPECIFIEDR-PBGA-B602.7V2.3V512Mb 32M x 161VolatileSYNCHRONOUS166MHz700psDRAMParallel32MX161615ns536870912 bit13mm1.2mm8mmROHS3 Compliant----------
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