ISSI, Integrated Silicon Solution Inc IS43TR16640CL-125JBLI
- Part Number:
- IS43TR16640CL-125JBLI
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 7371070-IS43TR16640CL-125JBLI
- Description:
- Memory IC 13mm mm
- Datasheet:
- IS43TR16640CL-125JBLI
ISSI, Integrated Silicon Solution Inc IS43TR16640CL-125JBLI technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS43TR16640CL-125JBLI.
- Factory Lead Time2 Weeks
- Mounting TypeSurface Mount
- Package / Case96-TFBGA
- Surface MountYES
- Operating Temperature-40°C~95°C TC
- PackagingTray
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations96
- Additional FeatureAUTO/SELF REFRESH
- TechnologySDRAM - DDR3L
- Voltage - Supply1.283V~1.45V
- Terminal PositionBOTTOM
- Number of Functions1
- Supply Voltage1.35V
- Terminal Pitch0.8mm
- JESD-30 CodeR-PBGA-B96
- Supply Voltage-Max (Vsup)1.45V
- Supply Voltage-Min (Vsup)1.283V
- Memory Size1Gb 64M x 16
- Number of Ports1
- Memory TypeVolatile
- Operating ModeSYNCHRONOUS
- Clock Frequency800MHz
- Access Time20ns
- Memory FormatDRAM
- Memory InterfaceParallel
- Organization64MX16
- Memory Width16
- Write Cycle Time - Word, Page15ns
- Memory Density1073741824 bit
- Length13mm
- Height Seated (Max)1.2mm
- Width9mm
- RoHS StatusROHS3 Compliant
IS43TR16640CL-125JBLI Overview
Volatile is its memory type. It is available in a case with a Tray shape. As you can see, it is embedded in 96-TFBGA case. There is an 1Gb 64M x 16 memory capacity on the chip. In this device, the memory is of the DRAM-format, which is a popular format in the mainstream computing sector. Due to its extended operating temperature range, the device is well suited for a wide range of demanding applications. A voltage of 1.283V~1.45V is possible to be applied to the supply. There is a recommendation that Surface Mount mounting type should be used for this product. As you can see from the diagram, the chip is planted with 96 terminations. In total, 1 functions are supported by this part. The memory device designed for this application has been designed to be powered by an 1.35V power supply. With a clock frequency of 800MHz, the memory rotates on its own. While this memory chip features many merits, it also offers AUTO/SELF REFRESH for improving system performance. An address can be read and/or written to one memory address using 1 ports on the chip.
IS43TR16640CL-125JBLI Features
Package / Case: 96-TFBGA
Additional Feature:AUTO/SELF REFRESH
IS43TR16640CL-125JBLI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS43TR16640CL-125JBLI Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
Volatile is its memory type. It is available in a case with a Tray shape. As you can see, it is embedded in 96-TFBGA case. There is an 1Gb 64M x 16 memory capacity on the chip. In this device, the memory is of the DRAM-format, which is a popular format in the mainstream computing sector. Due to its extended operating temperature range, the device is well suited for a wide range of demanding applications. A voltage of 1.283V~1.45V is possible to be applied to the supply. There is a recommendation that Surface Mount mounting type should be used for this product. As you can see from the diagram, the chip is planted with 96 terminations. In total, 1 functions are supported by this part. The memory device designed for this application has been designed to be powered by an 1.35V power supply. With a clock frequency of 800MHz, the memory rotates on its own. While this memory chip features many merits, it also offers AUTO/SELF REFRESH for improving system performance. An address can be read and/or written to one memory address using 1 ports on the chip.
IS43TR16640CL-125JBLI Features
Package / Case: 96-TFBGA
Additional Feature:AUTO/SELF REFRESH
IS43TR16640CL-125JBLI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS43TR16640CL-125JBLI Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
IS43TR16640CL-125JBLI More Descriptions
Active BOTTOM Volatile SYNCHRONOUS ic memory -40C~95C TC 1.283V 1073741824bit 9mm
DRAM Chip DDR3L SDRAM 1Gbit 64M X 16 1.35V 96-Pin TWBGA
DDR SDRAM, 64Mx16, 1.35V, 8K, BGA-96,RoHSISSI SCT
DRAM, 64M X 16BIT, -40 TO 95DEG C ROHS COMPLIANT: YES
IC DRAM 1GBIT PARALLEL 96TWBGA
DRAM Chip DDR3L SDRAM 1Gbit 64M X 16 1.35V 96-Pin TWBGA
DDR SDRAM, 64Mx16, 1.35V, 8K, BGA-96,RoHSISSI SCT
DRAM, 64M X 16BIT, -40 TO 95DEG C ROHS COMPLIANT: YES
IC DRAM 1GBIT PARALLEL 96TWBGA
The three parts on the right have similar specifications to IS43TR16640CL-125JBLI.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsAdditional FeatureTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchJESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeOperating ModeClock FrequencyAccess TimeMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageMemory DensityLengthHeight Seated (Max)WidthRoHS StatusECCN CodePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)View Compare
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IS43TR16640CL-125JBLI2 WeeksSurface Mount96-TFBGAYES-40°C~95°C TCTrayActive3 (168 Hours)96AUTO/SELF REFRESHSDRAM - DDR3L1.283V~1.45VBOTTOM11.35V0.8mmR-PBGA-B961.45V1.283V1Gb 64M x 161VolatileSYNCHRONOUS800MHz20nsDRAMParallel64MX161615ns1073741824 bit13mm1.2mm9mmROHS3 Compliant----
-
8 WeeksSurface Mount60-TFBGA--40°C~85°C TATape & Reel (TR)Active3 (168 Hours)--SDRAM - DDR21.7V~1.9V-------2Gb 256M x 8-Volatile-333MHz450psDRAMParallel--15ns----ROHS3 Compliant---
-
8 WeeksSurface Mount60-TFBGAYES-40°C~85°C TATrayActive3 (168 Hours)60PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESHSDRAM - DDR2.3V~2.7VBOTTOM12.5V1mmR-PBGA-B602.7V2.3V512Mb 32M x 161VolatileSYNCHRONOUS200MHz700psDRAMParallel32MX161615ns536870912 bit13mm1.2mm8mmROHS3 CompliantEAR99NOT SPECIFIEDNOT SPECIFIED
-
8 WeeksSurface Mount60-TFBGAYES-40°C~85°C TATrayActive3 (168 Hours)60PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESHSDRAM - DDR2.3V~2.7VBOTTOM12.5V1mmR-PBGA-B602.7V2.3V512Mb 32M x 161VolatileSYNCHRONOUS166MHz700psDRAMParallel32MX161615ns536870912 bit13mm1.2mm8mmROHS3 CompliantEAR99NOT SPECIFIEDNOT SPECIFIED
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