ISSI, Integrated Silicon Solution Inc IS43TR16640C-125JBLI
- Part Number:
- IS43TR16640C-125JBLI
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 7371062-IS43TR16640C-125JBLI
- Description:
- Memory IC 13mm mm
- Datasheet:
- IS43TR16640C-125JBLI
ISSI, Integrated Silicon Solution Inc IS43TR16640C-125JBLI technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS43TR16640C-125JBLI.
- Factory Lead Time2 Weeks
- Mounting TypeSurface Mount
- Package / Case96-TFBGA
- Surface MountYES
- Operating Temperature-40°C~95°C TC
- PackagingTray
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations96
- Additional FeatureAUTO/SELF REFRESH
- TechnologySDRAM - DDR3
- Voltage - Supply1.425V~1.575V
- Terminal PositionBOTTOM
- Number of Functions1
- Supply Voltage1.5V
- Terminal Pitch0.8mm
- JESD-30 CodeR-PBGA-B96
- Supply Voltage-Max (Vsup)1.575V
- Supply Voltage-Min (Vsup)1.425V
- Memory Size1Gb 64M x 16
- Number of Ports1
- Memory TypeVolatile
- Operating ModeSYNCHRONOUS
- Clock Frequency800MHz
- Access Time20ns
- Memory FormatDRAM
- Memory InterfaceParallel
- Organization64MX16
- Memory Width16
- Write Cycle Time - Word, Page15ns
- Memory Density1073741824 bit
- Length13mm
- Height Seated (Max)1.2mm
- Width9mm
- RoHS StatusROHS3 Compliant
IS43TR16640C-125JBLI Overview
There is a Volatile memory type associated with this device. Tray-cases are available. There is a 96-TFBGA case embedded in it. 1Gb 64M x 16 is the chip's memory size. DRAM-format memory is used in this device, which is a mainstream design. Due to its wide operating temperature range, this device can be used in a wide variety of demanding applications. The supply voltage can be up to 1.425V~1.575V. A Surface Mount mounting type is recommended for this product. The chip is terminated with 96 terminations. In total, this part supports 1 functions. Memory devices such as this one are designed to be powered by 1.5V and should be used as such. In this memory, the clock frequency rotation is within an 800MHz range. Despite all the merits of this chip, it also has AUTO/SELF REFRESH to boost system performance. This memory chip has 1 ports for accessing one memory address via read or write.
IS43TR16640C-125JBLI Features
Package / Case: 96-TFBGA
Additional Feature:AUTO/SELF REFRESH
IS43TR16640C-125JBLI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS43TR16640C-125JBLI Memory applications.
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
There is a Volatile memory type associated with this device. Tray-cases are available. There is a 96-TFBGA case embedded in it. 1Gb 64M x 16 is the chip's memory size. DRAM-format memory is used in this device, which is a mainstream design. Due to its wide operating temperature range, this device can be used in a wide variety of demanding applications. The supply voltage can be up to 1.425V~1.575V. A Surface Mount mounting type is recommended for this product. The chip is terminated with 96 terminations. In total, this part supports 1 functions. Memory devices such as this one are designed to be powered by 1.5V and should be used as such. In this memory, the clock frequency rotation is within an 800MHz range. Despite all the merits of this chip, it also has AUTO/SELF REFRESH to boost system performance. This memory chip has 1 ports for accessing one memory address via read or write.
IS43TR16640C-125JBLI Features
Package / Case: 96-TFBGA
Additional Feature:AUTO/SELF REFRESH
IS43TR16640C-125JBLI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS43TR16640C-125JBLI Memory applications.
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
IS43TR16640C-125JBLI More Descriptions
Active BOTTOM Volatile SYNCHRONOUS ic memory -40C~95C TC 1.425V 1073741824bit 9mm
SDRAM DDR3 Memory IC 1G-bit 64Mx16 1600MT/s 96-Pin BGA
1G, 1.5V, Ddr3, 64Mx16, 1600Mt/S @ 10-10-10, 96 Ball Bga (9Mm X13Mm) Rohs, It |Integrated Silicon Solution (Issi) IS43TR16640C-125JBLI
SDRAM DDR3 Memory IC 1G-bit 64Mx16 1600MT/s 96-Pin BGA
1G, 1.5V, Ddr3, 64Mx16, 1600Mt/S @ 10-10-10, 96 Ball Bga (9Mm X13Mm) Rohs, It |Integrated Silicon Solution (Issi) IS43TR16640C-125JBLI
The three parts on the right have similar specifications to IS43TR16640C-125JBLI.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsAdditional FeatureTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchJESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeOperating ModeClock FrequencyAccess TimeMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageMemory DensityLengthHeight Seated (Max)WidthRoHS StatusMountNumber of PinsECCN CodeHTS CodePin CountOperating Supply VoltageNominal Supply CurrentData Bus WidthOutput CharacteristicsAddress Bus WidthDensityStandby Current-MaxI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthRadiation HardeningLead FreeQualification StatusPower SuppliesSupply Current-MaxPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)View Compare
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IS43TR16640C-125JBLI2 WeeksSurface Mount96-TFBGAYES-40°C~95°C TCTrayActive3 (168 Hours)96AUTO/SELF REFRESHSDRAM - DDR31.425V~1.575VBOTTOM11.5V0.8mmR-PBGA-B961.575V1.425V1Gb 64M x 161VolatileSYNCHRONOUS800MHz20nsDRAMParallel64MX161615ns1073741824 bit13mm1.2mm9mmROHS3 Compliant------------------------
-
8 WeeksSurface Mount66-TSSOP (0.400, 10.16mm Width)--40°C~85°C TATrayActive3 (168 Hours)66AUTO/SELF REFRESHSDRAM - DDR2.3V~2.7VDUAL12.5V0.65mm-2.7V2.3V256Mb 16M x 161Volatile-200MHz700psDRAMParallel16MX161615ns-22.22mm1.2mm-ROHS3 CompliantSurface Mount66EAR998542.32.00.24662.5V330mA16b3-STATE15b256 Mb0.004ACOMMON8192248248NoLead Free-----
-
14 WeeksSurface Mount90-LFBGAYES0°C~70°C TATrayActive3 (168 Hours)90AUTO/SELF REFRESHSDRAM - Mobile LPDDR1.7V~1.95VBOTTOM11.8V0.8mm-1.95V1.7V64Mb 2M x 321VolatileSYNCHRONOUS166MHz5.5nsDRAMParallel32MX323215ns1073741824 bit13mm1.45mm8mmROHS3 Compliant-90------3-STATE--0.00002ACOMMON81922481624816--Not Qualified1.8V0.22mA--
-
8 WeeksSurface Mount60-TFBGAYES-40°C~85°C TATrayActive3 (168 Hours)60PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESHSDRAM - DDR2.3V~2.7VBOTTOM12.5V1mmR-PBGA-B602.7V2.3V512Mb 32M x 161VolatileSYNCHRONOUS166MHz700psDRAMParallel32MX161615ns536870912 bit13mm1.2mm8mmROHS3 Compliant--EAR99------------------NOT SPECIFIEDNOT SPECIFIED
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