ISSI, Integrated Silicon Solution Inc IS43TR16640C-125JBL
- Part Number:
- IS43TR16640C-125JBL
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 7371061-IS43TR16640C-125JBL
- Description:
- Memory IC
- Datasheet:
- IS43TR16640C-125JBL
ISSI, Integrated Silicon Solution Inc IS43TR16640C-125JBL technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS43TR16640C-125JBL.
- Factory Lead Time2 Weeks
- Mounting TypeSurface Mount
- Package / Case96-TFBGA
- Operating Temperature0°C~85°C TC
- PackagingTray
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologySDRAM - DDR3
- Voltage - Supply1.425V~1.575V
- Memory Size1Gb 64M x 16
- Memory TypeVolatile
- Clock Frequency800MHz
- Access Time20ns
- Memory FormatDRAM
- Memory InterfaceParallel
- Write Cycle Time - Word, Page15ns
- RoHS StatusROHS3 Compliant
IS43TR16640C-125JBL Overview
In terms of its memory type, it can be classified as Volatile. The case comes in Tray size. The case is embedded in 96-TFBGA. Memory size on the chip is 1Gb 64M x 16. This device uses takes advantage of the DRAM format. The device's extended operating temperature range of 0°C~85°C TC makes it ideal for many demanding applications. The device is capable of handling a supply voltage of 1.425V~1.575V. The recommended mounting type for this device is Surface Mount. There is a clock frequency rotation of the memory within a 800MHz range.
IS43TR16640C-125JBL Features
Package / Case: 96-TFBGA
IS43TR16640C-125JBL Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS43TR16640C-125JBL Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
In terms of its memory type, it can be classified as Volatile. The case comes in Tray size. The case is embedded in 96-TFBGA. Memory size on the chip is 1Gb 64M x 16. This device uses takes advantage of the DRAM format. The device's extended operating temperature range of 0°C~85°C TC makes it ideal for many demanding applications. The device is capable of handling a supply voltage of 1.425V~1.575V. The recommended mounting type for this device is Surface Mount. There is a clock frequency rotation of the memory within a 800MHz range.
IS43TR16640C-125JBL Features
Package / Case: 96-TFBGA
IS43TR16640C-125JBL Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS43TR16640C-125JBL Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
IS43TR16640C-125JBL More Descriptions
Active Volatile ROHS3Compliant Parallel ic memory 0C~85C TC 1.425V~1.575V 1Gb 64M x 16 20ns
DRAM Chip DDR3 SDRAM 1Gbit 64M X 16 1.5V 96-Pin TWBGA
DDR SDRAM, 64Mx16, 1.5V, 8K, BGA-96,RoHSISSI SCT
IC DRAM 1GBIT PARALLEL 96TWBGA
1G, 1.5V, Ddr3, 64Mx16, 1600Mt/S @ 10-10-10, 96 Ball Bga (9Mm X13Mm) Rohs |Integrated Silicon Solution (Issi) IS43TR16640C-125JBL
DRAM Chip DDR3 SDRAM 1Gbit 64M X 16 1.5V 96-Pin TWBGA
DDR SDRAM, 64Mx16, 1.5V, 8K, BGA-96,RoHSISSI SCT
IC DRAM 1GBIT PARALLEL 96TWBGA
1G, 1.5V, Ddr3, 64Mx16, 1600Mt/S @ 10-10-10, 96 Ball Bga (9Mm X13Mm) Rohs |Integrated Silicon Solution (Issi) IS43TR16640C-125JBL
The three parts on the right have similar specifications to IS43TR16640C-125JBL.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyMemory SizeMemory TypeClock FrequencyAccess TimeMemory FormatMemory InterfaceWrite Cycle Time - Word, PageRoHS StatusSurface MountNumber of TerminationsECCN CodeAdditional FeatureTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Number of PortsOperating ModeOrganizationMemory WidthMemory DensityLengthHeight Seated (Max)WidthView Compare
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IS43TR16640C-125JBL2 WeeksSurface Mount96-TFBGA0°C~85°C TCTrayActive3 (168 Hours)SDRAM - DDR31.425V~1.575V1Gb 64M x 16Volatile800MHz20nsDRAMParallel15nsROHS3 Compliant----------------------
-
8 WeeksSurface Mount60-TFBGA-40°C~85°C TATape & Reel (TR)Active3 (168 Hours)SDRAM - DDR21.7V~1.9V2Gb 256M x 8Volatile333MHz450psDRAMParallel15nsROHS3 Compliant---------------------
-
8 WeeksSurface Mount84-TFBGA-40°C~85°C TATape & Reel (TR)Active3 (168 Hours)SDRAM - DDR21.7V~1.9V2Gb 128M x 16Volatile400MHz400nsDRAMParallel15nsROHS3 Compliant---------------------
-
8 WeeksSurface Mount60-TFBGA-40°C~85°C TATrayActive3 (168 Hours)SDRAM - DDR2.3V~2.7V512Mb 32M x 16Volatile200MHz700psDRAMParallel15nsROHS3 CompliantYES60EAR99PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESHBOTTOMNOT SPECIFIED12.5V1mmNOT SPECIFIEDR-PBGA-B602.7V2.3V1SYNCHRONOUS32MX1616536870912 bit13mm1.2mm8mm
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