ISSI, Integrated Silicon Solution Inc IS43TR16512BL-107MBLI
- Part Number:
- IS43TR16512BL-107MBLI
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 7013726-IS43TR16512BL-107MBLI
- Description:
- Memory IC 14mm mm
- Datasheet:
- IS43TR16512BL-107MBLI
ISSI, Integrated Silicon Solution Inc IS43TR16512BL-107MBLI technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS43TR16512BL-107MBLI.
- Factory Lead Time2 Weeks
- Mounting TypeSurface Mount
- Package / Case96-TFBGA
- Surface MountYES
- Operating Temperature-40°C~95°C TC
- PackagingTray
- JESD-609 Codee1
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations96
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Additional FeatureAUTO/SELF REFRESH
- TechnologySDRAM - DDR3L
- Voltage - Supply1.283V~1.45V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage1.35V
- Terminal Pitch0.8mm
- Time@Peak Reflow Temperature-Max (s)10
- JESD-30 CodeR-PBGA-B96
- Supply Voltage-Max (Vsup)1.45V
- Supply Voltage-Min (Vsup)1.283V
- Memory Size8Gb 512M x 16
- Number of Ports1
- Memory TypeVolatile
- Operating ModeSYNCHRONOUS
- Clock Frequency933MHz
- Access Time20ns
- Memory FormatDRAM
- Memory InterfaceParallel
- Organization512MX16
- Memory Width16
- Write Cycle Time - Word, Page15ns
- Memory Density8589934592 bit
- Height Seated (Max)1.2mm
- Length14mm
- Width10mm
- RoHS StatusROHS3 Compliant
IS43TR16512BL-107MBLI Overview
This product was manufactured by ISSI, a leading provider of integrated silicon solutions, is an essential memory electronic component. It features SDRAM technology with DDR3L interface, ensuring efficient data transfer and storage. The product has a bottom terminal position, which provides better heat dissipation for enhanced performance. It is designed to support only one function, ensuring optimal efficiency. The maximum supply voltage stands at 1.35V, while the maximum voltage supply stands at 1.45V. The access time is just 20ns, demonstrating its high speed and responsiveness. The memory format used in this product is DRAM, while it uses a parallel memory interface. The write cycle time for word and page operations is 15ns, guaranteeing quick data retrieval.
IS43TR16512BL-107MBLI Features
Package / Case: 96-TFBGA
Additional Feature:AUTO/SELF REFRESH
IS43TR16512BL-107MBLI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS43TR16512BL-107MBLI Memory applications.
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
This product was manufactured by ISSI, a leading provider of integrated silicon solutions, is an essential memory electronic component. It features SDRAM technology with DDR3L interface, ensuring efficient data transfer and storage. The product has a bottom terminal position, which provides better heat dissipation for enhanced performance. It is designed to support only one function, ensuring optimal efficiency. The maximum supply voltage stands at 1.35V, while the maximum voltage supply stands at 1.45V. The access time is just 20ns, demonstrating its high speed and responsiveness. The memory format used in this product is DRAM, while it uses a parallel memory interface. The write cycle time for word and page operations is 15ns, guaranteeing quick data retrieval.
IS43TR16512BL-107MBLI Features
Package / Case: 96-TFBGA
Additional Feature:AUTO/SELF REFRESH
IS43TR16512BL-107MBLI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS43TR16512BL-107MBLI Memory applications.
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
IS43TR16512BL-107MBLI More Descriptions
Active BOTTOM Volatile SYNCHRONOUS ic memory -40C~95C TC 1.283V 8589934592bit 10mm
DRAM Chip DDR3L SDRAM 8Gbit 512M X 16 1.35V 96-Pin TWBGA Tray
DDR SDRAM, 512Mx16, 1.35V, 8K, BGA-96,RoHSISSI SCT
IC DRAM 8GBIT PARALLEL 96TWBGA
8G, 1.35V, DDR3L, 512MX16, 1866M
8G, 1.35V, Ddr3L, 512Mx16, 1866Mt/S @ 13-13-13, 96 Ball Bga (10Mm X 14Mm) Rohs, It |Integrated Silicon Solution (Issi) IS43TR16512BL-107MBLI
DRAM Chip DDR3L SDRAM 8Gbit 512M X 16 1.35V 96-Pin TWBGA Tray
DDR SDRAM, 512Mx16, 1.35V, 8K, BGA-96,RoHSISSI SCT
IC DRAM 8GBIT PARALLEL 96TWBGA
8G, 1.35V, DDR3L, 512MX16, 1866M
8G, 1.35V, Ddr3L, 512Mx16, 1866Mt/S @ 13-13-13, 96 Ball Bga (10Mm X 14Mm) Rohs, It |Integrated Silicon Solution (Issi) IS43TR16512BL-107MBLI
The three parts on the right have similar specifications to IS43TR16512BL-107MBLI.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeOperating ModeClock FrequencyAccess TimeMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageMemory DensityHeight Seated (Max)LengthWidthRoHS StatusNumber of PinsQualification StatusPower SuppliesSupply Current-MaxData Bus WidthOutput CharacteristicsStandby Current-MaxI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthView Compare
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IS43TR16512BL-107MBLI2 WeeksSurface Mount96-TFBGAYES-40°C~95°C TCTraye1Active3 (168 Hours)96EAR99Tin/Silver/Copper (Sn/Ag/Cu)AUTO/SELF REFRESHSDRAM - DDR3L1.283V~1.45VBOTTOM26011.35V0.8mm10R-PBGA-B961.45V1.283V8Gb 512M x 161VolatileSYNCHRONOUS933MHz20nsDRAMParallel512MX161615ns8589934592 bit1.2mm14mm10mmROHS3 Compliant------------
-
-Surface Mount84-TFBGAYES0°C~70°C TATape & Reel (TR)-Obsolete3 (168 Hours)84--AUTO/SELF REFRESHSDRAM - DDR21.7V~1.9VBOTTOM-11.8V0.8mm--1.9V1.7V256Mb 16M x 161VolatileSYNCHRONOUS333MHz450psDRAMParallel16MX161615ns-1.2mm12.5mm-RoHS Compliant84Not Qualified1.8V0.33mA16b3-STATE0.005ACOMMON81924848
-
14 WeeksSurface Mount90-LFBGAYES0°C~70°C TATray-Active3 (168 Hours)90--AUTO/SELF REFRESHSDRAM - Mobile LPDDR1.7V~1.95VBOTTOM-11.8V0.8mm--1.95V1.7V64Mb 2M x 321VolatileSYNCHRONOUS166MHz5.5nsDRAMParallel32MX323215ns1073741824 bit1.45mm13mm8mmROHS3 Compliant90Not Qualified1.8V0.22mA-3-STATE0.00002ACOMMON81922481624816
-
8 WeeksSurface Mount60-TFBGA--40°C~85°C TATape & Reel (TR)-Active3 (168 Hours)----SDRAM - DDR21.7V~1.9V---------2Gb 256M x 8-Volatile-400MHz400psDRAMParallel--15ns----ROHS3 Compliant-----------
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