ISSI, Integrated Silicon Solution Inc IS43TR16512AL-125KBL-TR
- Part Number:
- IS43TR16512AL-125KBL-TR
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 7373736-IS43TR16512AL-125KBL-TR
- Description:
- Memory IC 8 Gb kb 14mm mm
- Datasheet:
- IS43/46TR16512A(L)
ISSI, Integrated Silicon Solution Inc IS43TR16512AL-125KBL-TR technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS43TR16512AL-125KBL-TR.
- Factory Lead Time12 Weeks
- Mounting TypeSurface Mount
- Package / Case96-LFBGA
- Surface MountYES
- Number of Pins96
- Operating Temperature0°C~95°C TC
- PackagingTape & Reel (TR)
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations96
- Additional FeatureAUTO/SELF REFRESH
- TechnologySDRAM - DDR3L
- Voltage - Supply1.283V~1.45V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage1.35V
- Terminal Pitch0.8mm
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Operating Supply Voltage1.35V
- Supply Voltage-Max (Vsup)1.45V
- Supply Voltage-Min (Vsup)1.283V
- Memory Size8Gb 512M x 16
- Number of Ports1
- Memory TypeVolatile
- Operating ModeSYNCHRONOUS
- Clock Frequency800MHz
- Access Time20ns
- Memory FormatDRAM
- Memory InterfaceParallel
- Organization512MX16
- Memory Width16
- Write Cycle Time - Word, Page15ns
- Address Bus Width15b
- Density8 Gb
- Max Frequency1.6GHz
- Length14mm
- Height Seated (Max)1.4mm
- RoHS StatusROHS3 Compliant
IS43TR16512AL-125KBL-TR Overview
Volatile is the type of memory it has. There is a Tape & Reel (TR) case available. The 96-LFBGA case contains it. The chip has an 8Gb 512M x 16 memory. This device uses a DRAM-format memory, which is of mainstream design. A wide operating temperature range makes this device ideal for a variety of demanding applications. A voltage of 1.283V~1.45V can be supplied to memory ics. Its recommended mounting type is Surface Mount. The chip has 96 terminations. For a comprehensive working procedure, this part supports as many as 1 functions. In order to operate this memory device, it must be supplied with 1.35V of power. It is important to note that the memory has a clock frequency rotation within the range of 800MHz. The memory device is enclosed in a package with an 96-pin connector. A voltage of 1.35V is noted as the operating supply voltage for this memory. Despite all its merits, this chip also features AUTO/SELF REFRESH to boost system performance. A memory address is accessed through 1 ports on this chip. It is possible to run this memory at a maximum frequency of up to 1.6GHz.
IS43TR16512AL-125KBL-TR Features
Package / Case: 96-LFBGA
96 Pins
Operating Supply Voltage:1.35V
Additional Feature:AUTO/SELF REFRESH
IS43TR16512AL-125KBL-TR Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS43TR16512AL-125KBL-TR Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
Volatile is the type of memory it has. There is a Tape & Reel (TR) case available. The 96-LFBGA case contains it. The chip has an 8Gb 512M x 16 memory. This device uses a DRAM-format memory, which is of mainstream design. A wide operating temperature range makes this device ideal for a variety of demanding applications. A voltage of 1.283V~1.45V can be supplied to memory ics. Its recommended mounting type is Surface Mount. The chip has 96 terminations. For a comprehensive working procedure, this part supports as many as 1 functions. In order to operate this memory device, it must be supplied with 1.35V of power. It is important to note that the memory has a clock frequency rotation within the range of 800MHz. The memory device is enclosed in a package with an 96-pin connector. A voltage of 1.35V is noted as the operating supply voltage for this memory. Despite all its merits, this chip also features AUTO/SELF REFRESH to boost system performance. A memory address is accessed through 1 ports on this chip. It is possible to run this memory at a maximum frequency of up to 1.6GHz.
IS43TR16512AL-125KBL-TR Features
Package / Case: 96-LFBGA
96 Pins
Operating Supply Voltage:1.35V
Additional Feature:AUTO/SELF REFRESH
IS43TR16512AL-125KBL-TR Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS43TR16512AL-125KBL-TR Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
IS43TR16512AL-125KBL-TR More Descriptions
8G, 1.35V, DDR3L, 512MX16, 1600MT/S @ 11-11-11, 96 BALL BGA (10MM X 14MM) ROHS, T&R
DRAM Chip DDR3L SDRAM 8G-Bit 512Mx16 1.35V 96-Pin LF-BGA T/R
IC DRAM 8GBIT PARALLEL 96LFBGA
DRAM Chip DDR3L SDRAM 8G-Bit 512Mx16 1.35V 96-Pin LF-BGA T/R
IC DRAM 8GBIT PARALLEL 96LFBGA
The three parts on the right have similar specifications to IS43TR16512AL-125KBL-TR.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsAdditional FeatureTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)Operating Supply VoltageSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeOperating ModeClock FrequencyAccess TimeMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageAddress Bus WidthDensityMax FrequencyLengthHeight Seated (Max)RoHS StatusMountECCN CodeHTS CodePin CountNominal Supply CurrentData Bus WidthOutput CharacteristicsStandby Current-MaxI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthRadiation HardeningLead FreeQualification StatusPower SuppliesSupply Current-MaxMemory DensityWidthJESD-30 CodeView Compare
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IS43TR16512AL-125KBL-TR12 WeeksSurface Mount96-LFBGAYES960°C~95°C TCTape & Reel (TR)Active3 (168 Hours)96AUTO/SELF REFRESHSDRAM - DDR3L1.283V~1.45VBOTTOMNOT SPECIFIED11.35V0.8mmNOT SPECIFIED1.35V1.45V1.283V8Gb 512M x 161VolatileSYNCHRONOUS800MHz20nsDRAMParallel512MX161615ns15b8 Gb1.6GHz14mm1.4mmROHS3 Compliant---------------------
-
8 WeeksSurface Mount66-TSSOP (0.400, 10.16mm Width)-66-40°C~85°C TATrayActive3 (168 Hours)66AUTO/SELF REFRESHSDRAM - DDR2.3V~2.7VDUAL-12.5V0.65mm-2.5V2.7V2.3V256Mb 16M x 161Volatile-200MHz700psDRAMParallel16MX161615ns15b256 Mb-22.22mm1.2mmROHS3 CompliantSurface MountEAR998542.32.00.2466330mA16b3-STATE0.004ACOMMON8192248248NoLead Free------
-
14 WeeksSurface Mount90-LFBGAYES900°C~70°C TATrayActive3 (168 Hours)90AUTO/SELF REFRESHSDRAM - Mobile LPDDR1.7V~1.95VBOTTOM-11.8V0.8mm--1.95V1.7V64Mb 2M x 321VolatileSYNCHRONOUS166MHz5.5nsDRAMParallel32MX323215ns---13mm1.45mmROHS3 Compliant------3-STATE0.00002ACOMMON81922481624816--Not Qualified1.8V0.22mA1073741824 bit8mm-
-
8 WeeksSurface Mount60-TFBGAYES--40°C~85°C TATrayActive3 (168 Hours)60PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESHSDRAM - DDR2.3V~2.7VBOTTOMNOT SPECIFIED12.5V1mmNOT SPECIFIED-2.7V2.3V512Mb 32M x 161VolatileSYNCHRONOUS166MHz700psDRAMParallel32MX161615ns---13mm1.2mmROHS3 Compliant-EAR99---------------536870912 bit8mmR-PBGA-B60
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