ISSI, Integrated Silicon Solution Inc IS43TR16256A-107MBL
- Part Number:
- IS43TR16256A-107MBL
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 7373297-IS43TR16256A-107MBL
- Description:
- Memory IC 13mm mm
- Datasheet:
- IS4xTR16256A(L), 85120A(L)
ISSI, Integrated Silicon Solution Inc IS43TR16256A-107MBL technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS43TR16256A-107MBL.
- Factory Lead Time6 Weeks
- Mounting TypeSurface Mount
- Package / Case96-TFBGA
- Surface MountYES
- Operating Temperature0°C~95°C TC
- PackagingTray
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations96
- Additional FeaturePROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
- TechnologySDRAM - DDR3
- Voltage - Supply1.425V~1.575V
- Terminal PositionBOTTOM
- Number of Functions1
- Supply Voltage1.5V
- Terminal Pitch0.8mm
- JESD-30 CodeR-PBGA-B96
- Supply Voltage-Max (Vsup)1.575V
- Supply Voltage-Min (Vsup)1.425V
- Memory Size4Gb 256M x 16
- Number of Ports1
- Memory TypeVolatile
- Operating ModeSYNCHRONOUS
- Clock Frequency933MHz
- Access Time20ns
- Memory FormatDRAM
- Memory InterfaceParallel
- Organization256MX16
- Memory Width16
- Write Cycle Time - Word, Page15ns
- Memory Density4294967296 bit
- Length13mm
- Height Seated (Max)1.2mm
- Width9mm
- RoHS StatusROHS3 Compliant
IS43TR16256A-107MBL Overview
As far as memory types are concerned, Volatile is considered to be its memory type. In addition, memory ics is available in a Tray case as well. In the case of 96-TFBGA, it is embedded within the case. A memory chip with a capacity of 4Gb 256M x 16 is used on this device. There is a mainstream memory format used by this device, which is called DRAM-format memory. This device has an extended operating temperature range of 0°C~95°C TC, so it's perfect for a wide range of demanding applications. It is capable of handling a voltage supply of 1.425V~1.575V. As far as the mounting type is concerned, Surface Mount is recommended. On the chip, there are 96 terminations that are planted. The part supports at least 1 functions to ensure a comprehensive working process. In order to function properly, this ic memory chip should be powered by a voltage of 1.5V. In the memory, there is a clock frequency rotation that ranges 933MHz. The memory chip also offers PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH to level up system performance despite its merits. The memory chip has 1 ports for granting read/write access to one memory address.
IS43TR16256A-107MBL Features
Package / Case: 96-TFBGA
Additional Feature:PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
IS43TR16256A-107MBL Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS43TR16256A-107MBL Memory applications.
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
As far as memory types are concerned, Volatile is considered to be its memory type. In addition, memory ics is available in a Tray case as well. In the case of 96-TFBGA, it is embedded within the case. A memory chip with a capacity of 4Gb 256M x 16 is used on this device. There is a mainstream memory format used by this device, which is called DRAM-format memory. This device has an extended operating temperature range of 0°C~95°C TC, so it's perfect for a wide range of demanding applications. It is capable of handling a voltage supply of 1.425V~1.575V. As far as the mounting type is concerned, Surface Mount is recommended. On the chip, there are 96 terminations that are planted. The part supports at least 1 functions to ensure a comprehensive working process. In order to function properly, this ic memory chip should be powered by a voltage of 1.5V. In the memory, there is a clock frequency rotation that ranges 933MHz. The memory chip also offers PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH to level up system performance despite its merits. The memory chip has 1 ports for granting read/write access to one memory address.
IS43TR16256A-107MBL Features
Package / Case: 96-TFBGA
Additional Feature:PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
IS43TR16256A-107MBL Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS43TR16256A-107MBL Memory applications.
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
IS43TR16256A-107MBL More Descriptions
4G, 1.5V, Ddr3, 256Mx16, 1866Mt/s @ 13-13-13, 96 Ball Bga (9Mm X13Mm) Rohs
DRAM Chip DDR3 SDRAM 4G-Bit 256Mx16 1.5V 96-Pin TW-BGA
DRAM 4G, 1.5V, 1866MHz 256Mx16 DDR3 SDRAM
IC DRAM 4GBIT PARALLEL 96TWBGA
DRAM Chip DDR3 SDRAM 4G-Bit 256Mx16 1.5V 96-Pin TW-BGA
DRAM 4G, 1.5V, 1866MHz 256Mx16 DDR3 SDRAM
IC DRAM 4GBIT PARALLEL 96TWBGA
The three parts on the right have similar specifications to IS43TR16256A-107MBL.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsAdditional FeatureTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchJESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeOperating ModeClock FrequencyAccess TimeMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageMemory DensityLengthHeight Seated (Max)WidthRoHS StatusNumber of PinsQualification StatusPower SuppliesSupply Current-MaxOutput CharacteristicsStandby Current-MaxI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthECCN CodePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)View Compare
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IS43TR16256A-107MBL6 WeeksSurface Mount96-TFBGAYES0°C~95°C TCTrayActive3 (168 Hours)96PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESHSDRAM - DDR31.425V~1.575VBOTTOM11.5V0.8mmR-PBGA-B961.575V1.425V4Gb 256M x 161VolatileSYNCHRONOUS933MHz20nsDRAMParallel256MX161615ns4294967296 bit13mm1.2mm9mmROHS3 Compliant--------------
-
14 WeeksSurface Mount90-LFBGAYES0°C~70°C TATrayActive3 (168 Hours)90AUTO/SELF REFRESHSDRAM - Mobile LPDDR1.7V~1.95VBOTTOM11.8V0.8mm-1.95V1.7V64Mb 2M x 321VolatileSYNCHRONOUS166MHz5.5nsDRAMParallel32MX323215ns1073741824 bit13mm1.45mm8mmROHS3 Compliant90Not Qualified1.8V0.22mA3-STATE0.00002ACOMMON81922481624816---
-
8 WeeksSurface Mount84-TFBGA--40°C~85°C TATape & Reel (TR)Active3 (168 Hours)--SDRAM - DDR21.7V~1.9V-------2Gb 128M x 16-Volatile-400MHz400nsDRAMParallel--15ns----ROHS3 Compliant-------------
-
8 WeeksSurface Mount60-TFBGAYES-40°C~85°C TATrayActive3 (168 Hours)60PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESHSDRAM - DDR2.3V~2.7VBOTTOM12.5V1mmR-PBGA-B602.7V2.3V512Mb 32M x 161VolatileSYNCHRONOUS200MHz700psDRAMParallel32MX161615ns536870912 bit13mm1.2mm8mmROHS3 Compliant----------EAR99NOT SPECIFIEDNOT SPECIFIED
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