Alliance Memory, Inc. AS4C256M16D3B-12BINTR
- Part Number:
- AS4C256M16D3B-12BINTR
- Manufacturer:
- Alliance Memory, Inc.
- Ventron No:
- 7374548-AS4C256M16D3B-12BINTR
- Description:
- Memory IC
- Datasheet:
- AS4C256M16D3B-12BINTR
Alliance Memory, Inc. AS4C256M16D3B-12BINTR technical specifications, attributes, parameters and parts with similar specifications to Alliance Memory, Inc. AS4C256M16D3B-12BINTR.
- Factory Lead Time8 Weeks
- Mounting TypeSurface Mount
- Package / Case96-TFBGA
- Operating Temperature-40°C~95°C TC
- PackagingTape & Reel (TR)
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologySDRAM - DDR3
- Voltage - Supply1.425V~1.575V
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Memory Size4Gb 256M x 16
- Memory TypeVolatile
- Clock Frequency800MHz
- Access Time20ns
- Memory FormatDRAM
- Memory InterfaceParallel
- Write Cycle Time - Word, Page15ns
- RoHS StatusROHS3 Compliant
AS4C256M16D3B-12BINTR Overview
In terms of its memory type, it can be classified as Volatile. The case comes in Tape & Reel (TR) size. The case is embedded in 96-TFBGA. Memory size on the chip is 4Gb 256M x 16. This device uses takes advantage of the DRAM format. The device's extended operating temperature range of -40°C~95°C TC makes it ideal for many demanding applications. The device is capable of handling a supply voltage of 1.425V~1.575V. The recommended mounting type for this device is Surface Mount. There is a clock frequency rotation of the memory within a 800MHz range.
AS4C256M16D3B-12BINTR Features
Package / Case: 96-TFBGA
AS4C256M16D3B-12BINTR Applications
There are a lot of Alliance Memory, Inc.
AS4C256M16D3B-12BINTR Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
In terms of its memory type, it can be classified as Volatile. The case comes in Tape & Reel (TR) size. The case is embedded in 96-TFBGA. Memory size on the chip is 4Gb 256M x 16. This device uses takes advantage of the DRAM format. The device's extended operating temperature range of -40°C~95°C TC makes it ideal for many demanding applications. The device is capable of handling a supply voltage of 1.425V~1.575V. The recommended mounting type for this device is Surface Mount. There is a clock frequency rotation of the memory within a 800MHz range.
AS4C256M16D3B-12BINTR Features
Package / Case: 96-TFBGA
AS4C256M16D3B-12BINTR Applications
There are a lot of Alliance Memory, Inc.
AS4C256M16D3B-12BINTR Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
AS4C256M16D3B-12BINTR More Descriptions
AS4C256M16D3B: 4 Gb (256 M x 16) 800 MHz 20 ns Surface Mount SDRAM - FBGA-96
DDR3 4G 256M x 16 1.5V 96-ball FBGA 800MHz Industrial Temp TAPE AND REEL
DRAM Chip DDR3 SDRAM 4Gbit 256M X 16 1.5V 96-Pin FPBGA T/R
DDR3 DRAM, 256MX16, CMOS, PBGA96
DRAM 4G 1.5V 800MHz 256Mx16 DDR3 I-Temp
DDR3 SDRAM 4GB (256M X 16) AS4C256M16D3B
DDR3 4G 256M x 16 1.5V 96-ball FBGA 800MHz Industrial Temp TAPE AND REEL
DRAM Chip DDR3 SDRAM 4Gbit 256M X 16 1.5V 96-Pin FPBGA T/R
DDR3 DRAM, 256MX16, CMOS, PBGA96
DRAM 4G 1.5V 800MHz 256Mx16 DDR3 I-Temp
DDR3 SDRAM 4GB (256M X 16) AS4C256M16D3B
The three parts on the right have similar specifications to AS4C256M16D3B-12BINTR.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Memory SizeMemory TypeClock FrequencyAccess TimeMemory FormatMemory InterfaceWrite Cycle Time - Word, PageRoHS StatusSurface MountNumber of PinsSeriesPublishedPbfree CodeNumber of TerminationsECCN CodeAdditional FeatureTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchReach Compliance CodeOperating Supply VoltageSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Number of PortsOperating ModeOrganizationMemory WidthAddress Bus WidthDensityLengthHeight Seated (Max)JESD-30 CodeMemory DensityWidthView Compare
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AS4C256M16D3B-12BINTR8 WeeksSurface Mount96-TFBGA-40°C~95°C TCTape & Reel (TR)Active3 (168 Hours)SDRAM - DDR31.425V~1.575VNOT SPECIFIEDNOT SPECIFIED4Gb 256M x 16Volatile800MHz20nsDRAMParallel15nsROHS3 Compliant----------------------------
-
-Surface Mount96-TFBGA-40°C~105°C TCTrayDiscontinued3 (168 Hours)SDRAM - DDR31.425V~1.575V--4Gb 256M x 16Volatile800MHz20nsDRAMParallel15nsROHS3 CompliantYES96Automotive, AEC-Q1002014yes96EAR99AUTO/SELF REFRESHBOTTOM11.5V0.8mmunknown1.5V1.575V1.425V1SYNCHRONOUS256MX161615b4 Gb13mm1.2mm---
-
8 WeeksSurface Mount60-VFBGA-30°C~85°C TJTape & Reel (TR)Active3 (168 Hours)SDRAM - Mobile LPDDR1.7V~1.9VNOT SPECIFIEDNOT SPECIFIED512Mb 32M x 16Volatile200MHz700psDRAMParallel15nsROHS3 Compliant---2015-----------------------
-
8 WeeksSurface Mount60-TFBGA-40°C~95°C TCTrayActive3 (168 Hours)SDRAM - DDR21.7V~1.9VNOT SPECIFIEDNOT SPECIFIED2Gb 256M x 8Volatile400MHz57.5nsDRAMParallel15nsROHS3 CompliantYES--2014yes60-AUTO/SELF REFRESHBOTTOM11.8V0.8mm--1.9V1.7V1SYNCHRONOUS256MX88--13mm1.2mmR-PBGA-B602147483648 bit10.5mm
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