Diodes Incorporated ZXTP25040DFLTA

ZXTP25040DFLTA Overview
This device has a DC current gain of 300 @ 10mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -300mV.A VCE saturation (Max) of 300mV @ 300mA, 3A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.This device has a current rating of -1.5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 270MHz.A breakdown input voltage of 40V volts can be used.A maximum collector current of 1.5A volts is possible.

ZXTP25040DFLTA Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 300mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is -1.5A
a transition frequency of 270MHz


ZXTP25040DFLTA Applications
There are a lot of Diodes Incorporated
ZXTP25040DFLTA applications of single BJT transistors.


Inverter
Interface
Driver
Muting