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ZXTP25012EFHTA

Diodes Incorporated ZXTP25012EFHTA

Part Number:
ZXTP25012EFHTA
Manufacturer:
Diodes Incorporated
Ventron No:
2463411-ZXTP25012EFHTA
Description:
TRANS PNP 12V 4A SOT23-3
ECAD Model:
Datasheet:
ZXTP25012EFHTA

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Specifications
Diodes Incorporated ZXTP25012EFHTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXTP25012EFHTA.
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    7.994566mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2007
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    1.81W
  • Terminal Position
    DUAL
  • Terminal Form
    FLAT
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    ZXTP25012E
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power - Max
    1.25W
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    310MHz
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    12V
  • Max Collector Current
    4A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    500 @ 10mA 2V
  • Current - Collector Cutoff (Max)
    50nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    210mV @ 400mA, 4A
  • Collector Emitter Breakdown Voltage
    12V
  • Max Frequency
    310MHz
  • Transition Frequency
    310MHz
  • Collector Emitter Saturation Voltage
    -210mV
  • Max Breakdown Voltage
    12V
  • Collector Base Voltage (VCBO)
    12V
  • Emitter Base Voltage (VEBO)
    7V
  • Height
    1.02mm
  • Length
    3.04mm
  • Width
    1.4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
ZXTP25012EFHTA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 500 @ 10mA 2V DC current gain.As it features a collector emitter saturation voltage of -210mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 7V can result in a high level of efficiency.There is a transition frequency of 310MHz in the part.Single BJT transistor can be broken down at a voltage of 12V volts.When collector current reaches its maximum, it can reach 4A volts.

ZXTP25012EFHTA Features
the DC current gain for this device is 500 @ 10mA 2V
a collector emitter saturation voltage of -210mV
the vce saturation(Max) is 210mV @ 400mA, 4A
the emitter base voltage is kept at 7V
a transition frequency of 310MHz


ZXTP25012EFHTA Applications
There are a lot of Diodes Incorporated
ZXTP25012EFHTA applications of single BJT transistors.


Inverter
Interface
Driver
Muting
ZXTP25012EFHTA More Descriptions
ZXTP25012EFH Series PNP 12 V 4 A Medium Power Transistor SMT - SOT-23-3
Trans GP BJT PNP 12V 4A 1810mW 3-Pin SOT-23 T/R
Trans, Pnp, 12V, 4A, 150Deg C, 1.25W Rohs Compliant: Yes |Diodes Inc. ZXTP25012EFHTA
Product Comparison
The three parts on the right have similar specifications to ZXTP25012EFHTA.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Number of Elements
    Element Configuration
    Power - Max
    Transistor Application
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Max Frequency
    Transition Frequency
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Frequency
    Power Dissipation
    Voltage - Rated DC
    Current Rating
    Current - Collector (Ic) (Max)
    View Compare
  • ZXTP25012EFHTA
    ZXTP25012EFHTA
    Diodes Incorporated
    12 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2007
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    Other Transistors
    1.81W
    DUAL
    FLAT
    260
    40
    ZXTP25012E
    3
    1
    Single
    1.25W
    SWITCHING
    310MHz
    PNP
    PNP
    12V
    4A
    500 @ 10mA 2V
    50nA ICBO
    210mV @ 400mA, 4A
    12V
    310MHz
    310MHz
    -210mV
    12V
    12V
    7V
    1.02mm
    3.04mm
    1.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
  • ZXTP5401FLTA
    ZXTP5401FLTA
    Diodes Incorporated
    15 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2007
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn) - annealed
    Other Transistors
    330mW
    DUAL
    GULL WING
    260
    40
    ZXTP5401
    3
    1
    Single
    -
    AMPLIFIER
    100MHz
    PNP
    PNP
    150V
    600mA
    60 @ 10mA 5V
    50nA ICBO
    500mV @ 5mA, 50mA
    150V
    -
    100MHz
    -500mV
    150V
    160V
    5V
    1.02mm
    3.04mm
    1.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    100MHz
    330mW
    -
    -
    -
    ZXTP25012EFHTA vs ZXTP5401FLTA
  • ZXTP23015CFHTA
    ZXTP23015CFHTA
    Diodes Incorporated
    15 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    Other Transistors
    1.81W
    DUAL
    GULL WING
    260
    40
    ZXTP23015C
    3
    1
    Single
    1.25W
    SWITCHING
    270MHz
    PNP
    PNP
    15V
    6A
    200 @ 500mA 2V
    20nA
    190mV @ 240mA, 6A
    15V
    -
    270MHz
    -190mV
    15V
    15V
    7V
    1mm
    3.05mm
    1.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    270MHz
    1.81W
    -15V
    -6A
    5A
    ZXTP25012EFHTA vs ZXTP23015CFHTA
  • ZXTP19020DFFTA
    ZXTP19020DFFTA
    Diodes Incorporated
    15 Weeks
    Surface Mount
    Surface Mount
    SOT-23-3 Flat Leads
    3
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2017
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    Other Transistors
    2W
    DUAL
    GULL WING
    260
    40
    ZXTP19020D
    3
    1
    Single
    1.5W
    SWITCHING
    176MHz
    PNP
    PNP
    20V
    5.5A
    300 @ 100mA 2V
    50nA ICBO
    175mV @ 550mA, 5.5A
    20V
    -
    176MHz
    -44mV
    20V
    25V
    7V
    1mm
    3mm
    1.7mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    176MHz
    2W
    -
    -
    -
    ZXTP25012EFHTA vs ZXTP19020DFFTA
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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