Diodes Incorporated ZXTP19060CZTA
- Part Number:
- ZXTP19060CZTA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2464038-ZXTP19060CZTA
- Description:
- TRANS PNP 60V 4.5A SOT89
- Datasheet:
- ZXTP19060CZTA
Diodes Incorporated ZXTP19060CZTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXTP19060CZTA.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Number of Pins4
- Weight51.993025mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Max Power Dissipation4.46W
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Frequency180MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberZXTP19060C
- Pin Count3
- JESD-30 CodeR-PSSO-F3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation4.46W
- Case ConnectionCOLLECTOR
- Power - Max2.4W
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product180MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current4.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 100mA 2V
- Current - Collector Cutoff (Max)50nA ICBO
- Vce Saturation (Max) @ Ib, Ic410mV @ 450mA, 4.5A
- Collector Emitter Breakdown Voltage60V
- Transition Frequency180MHz
- Collector Emitter Saturation Voltage-410mV
- Max Breakdown Voltage60V
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)7V
- Height1.6mm
- Length4.6mm
- Width2.6mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZXTP19060CZTA Overview
This device has a DC current gain of 200 @ 100mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -410mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 7V to achieve high efficiency.In this part, there is a transition frequency of 180MHz.As a result, it can handle voltages as low as 60V volts.The maximum collector current is 4.5A volts.
ZXTP19060CZTA Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -410mV
the vce saturation(Max) is 410mV @ 450mA, 4.5A
the emitter base voltage is kept at 7V
a transition frequency of 180MHz
ZXTP19060CZTA Applications
There are a lot of Diodes Incorporated
ZXTP19060CZTA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 200 @ 100mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -410mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 7V to achieve high efficiency.In this part, there is a transition frequency of 180MHz.As a result, it can handle voltages as low as 60V volts.The maximum collector current is 4.5A volts.
ZXTP19060CZTA Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -410mV
the vce saturation(Max) is 410mV @ 450mA, 4.5A
the emitter base voltage is kept at 7V
a transition frequency of 180MHz
ZXTP19060CZTA Applications
There are a lot of Diodes Incorporated
ZXTP19060CZTA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
ZXTP19060CZTA More Descriptions
ZXTP19060CZ Series PNP 60 V 4.5 A Medium Power Transistor SMT - SOT-89-3
Trans GP BJT PNP 60V 4.5A 4460mW 4-Pin(3 Tab) SOT-89 T/R
Trans, Pnp, 60V, 4.5A, 150Deg C, 2.4W Rohs Compliant: Yes |Diodes Inc. ZXTP19060CZTA
Trans GP BJT PNP 60V 4.5A 4460mW 4-Pin(3 Tab) SOT-89 T/R
Trans, Pnp, 60V, 4.5A, 150Deg C, 2.4W Rohs Compliant: Yes |Diodes Inc. ZXTP19060CZTA
The three parts on the right have similar specifications to ZXTP19060CZTA.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)FrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsElement ConfigurationPower DissipationCase ConnectionPower - MaxTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeVoltage - Rated DCTerminal PositionCurrent RatinghFE MinContinuous Collector CurrentMax FrequencyView Compare
-
ZXTP19060CZTA15 WeeksSurface MountSurface MountTO-243AA451.993025mgSILICON-55°C~150°C TJTape & Reel (TR)2008e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)Other Transistors4.46WFLAT260180MHz40ZXTP19060C3R-PSSO-F31Single4.46WCOLLECTOR2.4WSWITCHING180MHzPNPPNP60V4.5A200 @ 100mA 2V50nA ICBO410mV @ 450mA, 4.5A60V180MHz-410mV60V60V7V1.6mm4.6mm2.6mmNo SVHCNoROHS3 CompliantLead Free-------
-
15 WeeksSurface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3noActive1 (Unlimited)4EAR99Matte Tin (Sn)-3WGULL WING260110MHz40ZXTP20084-1Single3WCOLLECTOR-SWITCHING110MHzPNPPNP30V5.5A100 @ 1A 1V20nA ICBO210mV @ 500mA, 5.5A30V110MHz-210mV30V50V7V1.65mm6.7mm3.7mm-NoROHS3 CompliantLead Free-30VDUAL-5.5A100-5.5A-
-
15 WeeksSurface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2007e3noActive1 (Unlimited)4EAR99Matte Tin (Sn)Other Transistors5.3WGULL WING260-40ZXTP19020D4-1Single-COLLECTOR3WSWITCHING176MHzPNPPNP20V8A300 @ 100mA 2V50nA ICBO275mV @ 800mA, 8A20V176MHz275mV20V25V7V1.65mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free-DUAL-300-176MHz
-
15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealedOther Transistors330mWGULL WING260100MHz40ZXTP54013-1Single330mW--AMPLIFIER100MHzPNPPNP150V600mA60 @ 10mA 5V50nA ICBO500mV @ 5mA, 50mA150V100MHz-500mV150V160V5V1.02mm3.04mm1.4mmNo SVHCNoROHS3 CompliantLead Free-DUAL----
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
21 September 2023
8 bit AVR Microcontroller ATMEGA32U4-AU
Ⅰ. Overview of ATMEGA32U4-AUⅡ. Symbol and Footprint of ATMEGA32U4-AUⅢ. Technical parametersⅣ. Features of ATMEGA32U4-AUⅤ. Pin descriptionⅥ. What types of products is ATMEGA32U4-AU suitable for?Ⅰ. Overview of ATMEGA32U4-AUATMEGA32U4-AU is... -
21 September 2023
Difference Between 2N2222 and BC547 Transistor
Ⅰ. What is 2N2222?Ⅱ. What is BC547?Ⅲ. 2N2222 vs BC547 symbolⅣ. 2N2222 vs BC547 technical parametersⅤ. 2N2222 vs BC547 pin comparisonⅥ. 2N2222 vs BC547 featuresⅦ. 2N2222 vs BC547... -
22 September 2023
Power Transistor IC LM317LZ: Symbol, Features and Package
Ⅰ. Overview of LM317LZⅡ. Symbol and Footprint of LM317LZⅢ. Technical parametersⅣ. Features of LM317LZⅤ. Pins and package of LM317LZⅥ. Advantages and disadvantages of LM317LZⅦ. How to optimize the... -
22 September 2023
LM301AN Operational Amplifier: Equivalent, Circuit and Package
Ⅰ. What is LM301AN?Ⅱ. Symbol, footprint and pin connection of LM301ANⅢ. Technical parametersⅣ. LM301AN tone control circuitⅤ. Features of LM301ANⅥ. What is the difference between LM301AN and LM709?Ⅶ....
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.