Diodes Incorporated ZXT2M322TA

ZXT2M322TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 150 @ 2A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -240mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 350mA, 3.5A.Continuous collector voltages of -3.5A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7.5V.Its current rating is -3.5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 180MHz.Single BJT transistor can take a breakdown input voltage of 20V volts.During maximum operation, collector current can be as low as 3.5A volts.

ZXT2M322TA Features
the DC current gain for this device is 150 @ 2A 2V
a collector emitter saturation voltage of -240mV
the vce saturation(Max) is 300mV @ 350mA, 3.5A
the emitter base voltage is kept at 7.5V
the current rating of this device is -3.5A
a transition frequency of 180MHz


ZXT2M322TA Applications
There are a lot of Diodes Incorporated
ZXT2M322TA applications of single BJT transistors.


Inverter
Interface
Driver
Muting