Diodes Incorporated ZXMP3A16DN8TA
- Part Number:
- ZXMP3A16DN8TA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3554004-ZXMP3A16DN8TA
- Description:
- MOSFET 2P-CH 30V 4.2A 8-SOIC
- Datasheet:
- ZXMP3A16DN8TA
Diodes Incorporated ZXMP3A16DN8TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXMP3A16DN8TA.
- Factory Lead Time17 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight73.992255mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Resistance45mOhm
- Terminal FinishMatte Tin (Sn)
- Additional FeatureLOW THRESHOLD
- SubcategoryOther Transistors
- Voltage - Rated DC-30V
- Max Power Dissipation2.1W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-5.5A
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count8
- Number of Elements2
- Number of Channels2
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.1W
- Turn On Delay Time3.8 ns
- Power - Max1.8W
- FET Type2 P-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs45m Ω @ 4.2A, 10V
- Vgs(th) (Max) @ Id1V @ 250μA (Min)
- Input Capacitance (Ciss) (Max) @ Vds1022pF @ 15V
- Current - Continuous Drain (Id) @ 25°C4.2A
- Gate Charge (Qg) (Max) @ Vgs29.6nC @ 10V
- Rise Time6.5ns
- Drain to Source Voltage (Vdss)30V
- Fall Time (Typ)21.4 ns
- Turn-Off Delay Time37.1 ns
- Continuous Drain Current (ID)5.5A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-30V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- Height1.5mm
- Length5mm
- Width4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZXMP3A16DN8TA Overview
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet ZXMP3A16DN8TA or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of ZXMP3A16DN8TA. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet ZXMP3A16DN8TA or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of ZXMP3A16DN8TA. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
ZXMP3A16DN8TA More Descriptions
Transistor MOSFET Array Dual P-CH 30V 5.5A 8-Pin SOIC T/R
Dual P-Channel 30 V 0.045 Ohm Surface Mount Enhancement Mode MOSFET - SOIC-8
Mosfet, Dual, P-Ch, 30V, 5.5A Rohs Compliant: Yes |Diodes Inc. ZXMP3A16DN8TA
Dual P-Channel 30 V 0.045 Ohm Surface Mount Enhancement Mode MOSFET - SOIC-8
Mosfet, Dual, P-Ch, 30V, 5.5A Rohs Compliant: Yes |Diodes Inc. ZXMP3A16DN8TA
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